SEMI MF1239 : 2005(R2016)
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The latest, up-to-date edition.
TEST METHOD FOR OXYGEN PRECIPITATION CHARACTERISTICS OF SILICON WAFERS BY MEASUREMENT OF INTERSTITIAL OXYGEN REDUCTION
Published date
12-01-2013
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Intended to be used to compare the oxygen reduction of two or more groups of silicon wafers. Also may be used to compare qualitatively the precipitation characteristics of two or more groups of wafers.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (11/2003)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Current
|
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M57 : 2016 | SPECIFICATION FOR SILICON ANNEALED WAFERS |
| SEMI M11 : 2004 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS FOR INTEGRATED CIRCUIT (IC) APPLICATIONS |
| SEMI C54 : 2016 | SPECIFICATION FOR OXYGEN |
| SEMI MF1188:2007(R2012) | TEST METHOD FOR INTERSTITIAL OXYGEN CONTENT OF SILICON BY INFRARED ABSORPTION WITH SHORT BASELINE |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI MF951 : 2005(R2016) | TEST METHOD FOR DETERMINATION OF RADIAL INTERSTITIAL OXYGEN VARIATION IN SILICON WAFERS |
| SEMI C59 : 2017 | SPECIFICATION FOR NITROGEN |
| SEMI C28 : 2011 | SPECIFICATIONS FOR HYDROFLUORIC ACID |
| SEMI MF1619 : 2012(R2018) | TEST METHOD FOR MEASUREMENT OF INTERSTITIAL OXYGEN CONTENT OF SILICON WAFERS BY INFRARED ABSORPTION SPECTROSCOPY WITH P-POLARIZED RADIATION INCIDENT AT THE BREWSTER ANGLE |
| SEMI C29 : 2010 | SPECIFICATIONS AND GUIDE FOR 4.9% HYDROFLUORIC ACID (10:1 V/V) |
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