SEMI MF1619 : 2012(R2018)
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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TEST METHOD FOR MEASUREMENT OF INTERSTITIAL OXYGEN CONTENT OF SILICON WAFERS BY INFRARED ABSORPTION SPECTROSCOPY WITH P-POLARIZED RADIATION INCIDENT AT THE BREWSTER ANGLE
Available format(s)
Hardcopy
Superseded date
16-11-2023
Superseded by
Language(s)
English
Published date
04-08-2018
Gives a means for reducing the influence of the back surface condition on the measurement.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (02/2005) Also available in CD-ROM. (10/2007)
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| DocumentType |
Revision
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| Pages |
0
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
|
| SupersededBy |
| SEMI MF1239 : 2005(R2016) | TEST METHOD FOR OXYGEN PRECIPITATION CHARACTERISTICS OF SILICON WAFERS BY MEASUREMENT OF INTERSTITIAL OXYGEN REDUCTION |
| SEMI M76 : 2010 | SPECIFICATION FOR DEVELOPMENTAL 450 MM DIAMETER POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI MF951 : 2005(R2016) | TEST METHOD FOR DETERMINATION OF RADIAL INTERSTITIAL OXYGEN VARIATION IN SILICON WAFERS |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M41 : 2015 | SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER DEVICE/ICS |
| SEMI M6 : 2008 | SPECIFICATION FOR SILICON WAFERS FOR USE AS PHOTOVOLTAIC SOLAR CELLS |
| SEMI M47 : 2007 | SPECIFICATION FOR SILICON-ON-INSULATOR (SOI) WAFERS FOR CMOS LSI APPLICATIONS |
| SEMI MF1188:2007(R2012) | TEST METHOD FOR INTERSTITIAL OXYGEN CONTENT OF SILICON BY INFRARED ABSORPTION WITH SHORT BASELINE |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
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