SEMI MF374 :2012(R2018)
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE
Available format(s)
Hardcopy
Superseded date
17-11-2023
Superseded by
Language(s)
English
Published date
08-11-2018
Important note : Users cannot be edited or removed once added to your Multi user PDF.Covers sheet resistance of silicon epitaxial, diffused, and implanted layers is an important materials acceptance and process control parameter.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (02/2005)
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| DocumentType |
Revision
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| Pages |
0
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI MF672:2012(R2018) | Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe |
| SEMI MF672:2012(R2023) | Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe |
| PD IEC/TS 62607-2-1:2012 | Nanomanufacturing. Key control characteristics Carbon nanotube materials. Film resistance |
| SEMI MF1529 : 2010(R2015) | TEST METHOD FOR SHEET RESISTANCE UNIFORMITY EVALUATION BY IN-LINE FOUR-POINT PROBE WITH THE DUAL-CONFIGURATION PROCEDURE |
| SEMI MF525 : 2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE |
| SEMI PV28 : 2016 | TEST METHOD FOR MEASURING RESISTIVITY OR SHEET RESISTANCE WITH A SINGLE-SIDED NONCONTACT EDDY-CURRENT GAUGE |
| SEMI M4 : NOV 2003 | SPECIFICATIONS FOR SOS EPITAXIAL WAFERS |
| BS ISO 14237:2010 | Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials |
| SEMI M62 : 2017 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS |
| SEMI MF673 : 2017 | TEST METHOD FOR MEASURING RESISTIVITY OF SEMICONDUCTOR WAFERS OR SHEET RESISTANCE OF SEMICONDUCTOR FILMS WITH A NONCONTACT EDDY-CURRENT GAUGE |
| SEMI MF43 : 2016 | TEST METHOD FOR RESISTIVITY OF SEMICONDUCTOR MATERIALS |
| SEMI MF672 : 2007 | TEST METHOD FOR MEASURING RESISTIVITY PROFILES PERPENDICULAR TO THE SURFACE OF A SILICON WAFER USING A SPREADING RESISTANCE PROBE |
| IEC TS 62607-2-1:2012 | Nanomanufacturing - Key control characteristics - Part 2-1: Carbon nanotube materials - Film resistance |
| SEMI M2 : 2003 | SPECIFICATION FOR SILICON EPITAXIAL WAFERS FOR DISCRETE DEVICE APPLICATIONS |
| SEMI MF1618 : 2010(R2015) | PRACTICE FOR DETERMINATION OF UNIFORMITY OF THIN FILMS ON SILICON WAFERS |
| ISO 14237:2010 | Surface chemical analysis Secondary-ion mass spectrometry Determination of boron atomic concentration in silicon using uniformly doped materials |
| SEMI M11 : 2004 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS FOR INTEGRATED CIRCUIT (IC) APPLICATIONS |
| SEMI C31 : 2015 | SPECIFICATION FOR METHANOL |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI MF42 : 2016 | TEST METHOD FOR CONDUCTIVITY TYPE OF EXTRINSIC SEMICONDUCTING MATERIALS |
| SEMI MF2074 : 2012 (R2018) | GUIDE FOR MEASURING DIAMETER OF SILICON AND OTHER SEMICONDUCTOR WAFERS |
| SEMI C59 : 2017 | SPECIFICATION FOR NITROGEN |
| SEMI C28 : 2011 | SPECIFICATIONS FOR HYDROFLUORIC ACID |
| SEMI C19 : 2014 | SPECIFICATION FOR ACETONE |
| SEMI MF1529 : 2010(R2015) | TEST METHOD FOR SHEET RESISTANCE UNIFORMITY EVALUATION BY IN-LINE FOUR-POINT PROBE WITH THE DUAL-CONFIGURATION PROCEDURE |
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