SEMI MF374 :2012(R2018)
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE
Available format(s)
Hardcopy
Language(s)
English
Published date
08-11-2018
Superseded date
17-11-2023
Superseded by
€125.00
Excluding VAT
Covers sheet resistance of silicon epitaxial, diffused, and implanted layers is an important materials acceptance and process control parameter.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (02/2005)
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| DocumentType |
Revision
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| Pages |
0
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI MF672:2012(R2018) | Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe |
| SEMI MF672:2012(R2023) | Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe |
| PD IEC/TS 62607-2-1:2012 | Nanomanufacturing. Key control characteristics Carbon nanotube materials. Film resistance |
| SEMI MF1529 : 2010(R2015) | TEST METHOD FOR SHEET RESISTANCE UNIFORMITY EVALUATION BY IN-LINE FOUR-POINT PROBE WITH THE DUAL-CONFIGURATION PROCEDURE |
| SEMI MF525 : 2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE |
| SEMI PV28 : 2016 | TEST METHOD FOR MEASURING RESISTIVITY OR SHEET RESISTANCE WITH A SINGLE-SIDED NONCONTACT EDDY-CURRENT GAUGE |
| SEMI M4 : NOV 2003 | SPECIFICATIONS FOR SOS EPITAXIAL WAFERS |
| BS ISO 14237:2010 | Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials |
| SEMI M62 : 2017 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS |
| SEMI MF673 : 2017 | TEST METHOD FOR MEASURING RESISTIVITY OF SEMICONDUCTOR WAFERS OR SHEET RESISTANCE OF SEMICONDUCTOR FILMS WITH A NONCONTACT EDDY-CURRENT GAUGE |
| SEMI MF43 : 2016 | TEST METHOD FOR RESISTIVITY OF SEMICONDUCTOR MATERIALS |
| SEMI MF672 : 2007 | TEST METHOD FOR MEASURING RESISTIVITY PROFILES PERPENDICULAR TO THE SURFACE OF A SILICON WAFER USING A SPREADING RESISTANCE PROBE |
| IEC TS 62607-2-1:2012 | Nanomanufacturing - Key control characteristics - Part 2-1: Carbon nanotube materials - Film resistance |
| SEMI M2 : 2003 | SPECIFICATION FOR SILICON EPITAXIAL WAFERS FOR DISCRETE DEVICE APPLICATIONS |
| SEMI MF1618 : 2010(R2015) | PRACTICE FOR DETERMINATION OF UNIFORMITY OF THIN FILMS ON SILICON WAFERS |
| ISO 14237:2010 | Surface chemical analysis — Secondary-ion mass spectrometry — Determination of boron atomic concentration in silicon using uniformly doped materials |
| SEMI M11 : 2004 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS FOR INTEGRATED CIRCUIT (IC) APPLICATIONS |
| SEMI C31 : 2015 | SPECIFICATION FOR METHANOL |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI MF42 : 2016 | TEST METHOD FOR CONDUCTIVITY TYPE OF EXTRINSIC SEMICONDUCTING MATERIALS |
| SEMI MF2074 : 2012 (R2018) | GUIDE FOR MEASURING DIAMETER OF SILICON AND OTHER SEMICONDUCTOR WAFERS |
| SEMI C59 : 2017 | SPECIFICATION FOR NITROGEN |
| SEMI C28 : 2011 | SPECIFICATIONS FOR HYDROFLUORIC ACID |
| SEMI C19 : 2014 | SPECIFICATION FOR ACETONE |
| SEMI MF1529 : 2010(R2015) | TEST METHOD FOR SHEET RESISTANCE UNIFORMITY EVALUATION BY IN-LINE FOUR-POINT PROBE WITH THE DUAL-CONFIGURATION PROCEDURE |
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