SEMI MF525 : 2012
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE
Available format(s)
Hardcopy
Superseded date
17-11-2023
Superseded by
Language(s)
English
Published date
04-08-2018
Important note : Users cannot be edited or removed once added to your Multi user PDF.Gives means for directly determining the resistivity of a substrate or of an epitaxial layer of thickness > 20 times the effective electrical contact radius.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (02/2005)
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| DocumentType |
Revision
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| Pages |
0
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI PV1 : 2011(R2018) | TEST METHOD FOR MEASURING TRACE ELEMENTS IN SILICON FEEDSTOCK FOR SILICON SOLAR CELLS BY HIGH-MASS RESOLUTION GLOW DISCHARGE MASS SPECTROMETRY |
| SEMI MF1527 : 2007 | GUIDE FOR APPLICATION OF CERTIFIED REFERENCE MATERIALS AND REFERENCE WAFERS FOR CALIBRATION AND CONTROL OF INSTRUMENTS FOR MEASURING RESISTIVITY OF SILICON |
| SEMI MF672:2012(R2018) | Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe |
| SEMI MF672:2012(R2023) | Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe |
| SEMI PV49 : 2013(R2018) | TEST METHOD FOR THE MEASUREMENT OF ELEMENTAL IMPURITY CONCENTRATIONS IN SILICON FEEDSTOCK FOR SILICON SOLAR CELLS BY BULK DIGESTION, INDUCTIVELY COUPLED-PLASMA MASS SPECTROMETRY |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M62 : 2017 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS |
| SEMI MF672 : 2007 | TEST METHOD FOR MEASURING RESISTIVITY PROFILES PERPENDICULAR TO THE SURFACE OF A SILICON WAFER USING A SPREADING RESISTANCE PROBE |
| SEMI M2 : 2003 | SPECIFICATION FOR SILICON EPITAXIAL WAFERS FOR DISCRETE DEVICE APPLICATIONS |
| SEMI M11 : 2004 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS FOR INTEGRATED CIRCUIT (IC) APPLICATIONS |
| SEMI MF84:2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI MF42 : 2016 | TEST METHOD FOR CONDUCTIVITY TYPE OF EXTRINSIC SEMICONDUCTING MATERIALS |
| SEMI MF1392:2007 | TEST METHOD FOR DETERMINING NET CARRIER DENSITY PROFILES IN SILICON WAFERS BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY PROBE |
| SEMI E89 : 2007(R2013) | GUIDE FOR MEASUREMENT SYSTEM ANALYSIS (MSA) |
| SEMI MF95 : 2007(R2018) | TEST METHOD FOR THICKNESS OF LIGHTLY DOPED SILICON EPITAXIAL LAYERS ON HEAVILY DOPED SILICON SUBSTRATES USING AN INFRARED DISPERSIVE SPECTROPHOTOMETER |
| SEMI MF374 :2012(R2018) | TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE |
| SEMI MF110 : 2007(R2018) | TEST METHOD FOR THICKNESS OF EPITAXIAL OR DIFFUSED LAYERS IN SILICON BY THE ANGLE LAPPING AND STAINING TECHNIQUE |
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