SEMI MF672 : 2007
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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TEST METHOD FOR MEASURING RESISTIVITY PROFILES PERPENDICULAR TO THE SURFACE OF A SILICON WAFER USING A SPREADING RESISTANCE PROBE
Published date
12-01-2013
Superseded date
16-11-2023
Superseded by
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Describes procedures for measurement of the resistivity profile perpendicular to the surface of a silicon wafer of known orientation and type in any resistivity range for which there exist suitable standards.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (02/2005) Also available in CD-ROM. (07/2006)
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| DocumentType |
Standard
|
| PublisherName |
Semiconductor Equipment & Materials Institute
|
| Status |
Superseded
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| SupersededBy |
| SEMI MF1527 : 2007 | GUIDE FOR APPLICATION OF CERTIFIED REFERENCE MATERIALS AND REFERENCE WAFERS FOR CALIBRATION AND CONTROL OF INSTRUMENTS FOR MEASURING RESISTIVITY OF SILICON |
| SEMI MF1527:2012(R2023) | Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon |
| ISO 14237:2010 | Surface chemical analysis — Secondary-ion mass spectrometry — Determination of boron atomic concentration in silicon using uniformly doped materials |
| SEMI MF1392:2007 | TEST METHOD FOR DETERMINING NET CARRIER DENSITY PROFILES IN SILICON WAFERS BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY PROBE |
| SEMI MF950 : 2007(R2018) | TEST METHOD FOR MEASURING THE DEPTH OF CRYSTAL DAMAGE OF A MECHANICALLY WORKED SILICON WAFER SURFACE BY ANGLE POLISHED AND DEFECT ETCHING |
| BS ISO 14237:2010 | Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials |
| SEMI M62 : 2017 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS |
| SEMI M2 : 2003 | SPECIFICATION FOR SILICON EPITAXIAL WAFERS FOR DISCRETE DEVICE APPLICATIONS |
| SEMI M11 : 2004 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS FOR INTEGRATED CIRCUIT (IC) APPLICATIONS |
| SEMI MF84:2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE |
| SEMI C31 : 2015 | SPECIFICATION FOR METHANOL |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI MF723 : 2007E(R2012)E | PRACTICE FOR CONVERSION BETWEEN RESISTIVITY AND DOPANT OR CARRIER DENSITY FOR BORON-DOPED, PHOSPHOROUS-DOPED, AND ARSENIC-DOPED SILICON |
| SEMI MF42 : 2016 | TEST METHOD FOR CONDUCTIVITY TYPE OF EXTRINSIC SEMICONDUCTING MATERIALS |
| SEMI MF1392:2007 | TEST METHOD FOR DETERMINING NET CARRIER DENSITY PROFILES IN SILICON WAFERS BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY PROBE |
| SEMI MF374 :2012(R2018) | TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE |
| SEMI C28 : 2011 | SPECIFICATIONS FOR HYDROFLUORIC ACID |
| SEMI MF525 : 2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE |
| SEMI C29 : 2010 | SPECIFICATIONS AND GUIDE FOR 4.9% HYDROFLUORIC ACID (10:1 V/V) |
| SEMI MF674 : 2016 | PRACTICE FOR PREPARING SILICON FOR SPREADING RESISTANCE MEASUREMENTS |
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