SEMI P37 : 2013
Current
Current
The latest, up-to-date edition.
SPECIFICATION FOR EXTREME ULTRAVIOLET LITHOGRAPHY SUBSTRATES AND BLANKS
Published date
12-01-2013
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Describes key specifications for EUV substrates that ensure physical dimensional compatibility with EUV carriers, process equipment, and EUV scanners. Also deals and describes key properties of EUV substrates and blanks which should be specified in the purchase order between users and suppliers.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (11/2001)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Current
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| SEMI T16 : 2010(R2016) | SPECIFICATION FOR USE OF DATA MATRIX SYMBOLOGY FOR AUTOMATED IDENTIFICATION OF EXTREME ULTRAVIOLET LITHOGRAPHY MASKS |
| SEMI P10 : 2012 | SPECIFICATION OF DATA STRUCTURES FOR PHOTOMASK ORDERS |
| SEMI P48 : 2010(R2016) | SPECIFICATION OF FIDUCIAL MARKS FOR EUV MASK BLANK |
| SEMI P38 : 2003 | SPECIFICATION FOR ABSORBING FILM STACKS AND MULTILAYERS ON EXTREME ULTRAVIOLET LITHOGRAPHY MASK BLANKS |
| SEMI P40 : 2009(R2016) | SPECIFICATION FOR MOUNTING REQUIREMENTS FOR EXTREME ULTRAVIOLET LITHOGRAPHY MASKS |
| SEMI E152 : 2014 | MECHANICAL SPECIFICATION OF EUV POD FOR 150 MM EUVL RETICLES |
| SEMI P1 : 2008E | SPECIFICATION FOR HARD SURFACE PHOTOMASK SUBSTRATES |
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