ASTM F 416 : 1994
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
Test Method for Detection of Oxidation Induced Defects in Polished Silicon Wafers (Withdrawn 1998)
18-02-2021
31-12-2010
CONTAINED IN VOL 10.05 1997 Detects crystalline defects in surface region of silicon wafers induced or enhanced by oxidation cycles in device processing. Includes atmospheric pressure oxidation cycles representative of bipolar, MOS and CMOS technologies. Reveals strain fields arising from precipitates, dislocations, oxidation induced or pre-existing stacking faults, and shallow etch pits.
| DocumentType |
Test Method
|
| PublisherName |
American Society for Testing and Materials
|
| Status |
Superseded
|
| MIL-STD-989 Base Document:1991 | CERTIFICATION REQUIREMENTS FOR JAN SEMICONDUCTOR DEVICES |
| ASTM F 47 : 1994 | Test Method for Crystalographic Perfection of Silicon by Preferential Etch Techniques (Withdrawn 1998) |
| ASTM F 612 : 1988 | Practice for Cleaning Surfaces of Polished Silicon Slices (Withdrawn 1993) |
| FED-STD-209 Revision E:1992 | AIRBORNE PARTICULATE CLEANLINESS CLASSES IN CLEANROOMS AND CLEAN ZONES |
| ASTM F 47 : 1994 | Test Method for Crystalographic Perfection of Silicon by Preferential Etch Techniques (Withdrawn 1998) |
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