ASTM F 416 : 1994

Superseded

Superseded A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

Test Method for Detection of Oxidation Induced Defects in Polished Silicon Wafers (Withdrawn 1998)

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Superseded date: 18-02-2021

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Published date: 31-12-2010

Publisher: American Society for Testing and Materials

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CONTAINED IN VOL 10.05 1997 Detects crystalline defects in surface region of silicon wafers induced or enhanced by oxidation cycles in device processing. Includes atmospheric pressure oxidation cycles representative of bipolar, MOS and CMOS technologies. Reveals strain fields arising from precipitates, dislocations, oxidation induced or pre-existing stacking faults, and shallow etch pits.

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Document Type	Test Method
ISBN
Pages
Published
Publisher	American Society for Testing and Materials
Status	Superseded

Standards Referenced By This Book - (Show below) - (Hide below)

MIL-STD-989 Base Document:1991	CERTIFICATION REQUIREMENTS FOR JAN SEMICONDUCTOR DEVICES
ASTM F 47 : 1994	Test Method for Crystalographic Perfection of Silicon by Preferential Etch Techniques (Withdrawn 1998)

Standards Referencing This Book - (Show below) - (Hide below)

ASTM F 612 : 1988	Practice for Cleaning Surfaces of Polished Silicon Slices (Withdrawn 1993)
FED-STD-209 Revision E:1992	AIRBORNE PARTICULATE CLEANLINESS CLASSES IN CLEANROOMS AND CLEAN ZONES
ASTM F 47 : 1994	Test Method for Crystalographic Perfection of Silicon by Preferential Etch Techniques (Withdrawn 1998)

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