BS EN 62047-16:2015
Current
The latest, up-to-date edition.
Semiconductor devices. Micro-electromechanical devices Test methods for determining residual stresses of MEMS films. Wafer curvature and cantilever beam deflection methods
Hardcopy , PDF
English
31-07-2015
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FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Testing methods
Bibliography
Annex ZA (normative) - Normative references to
international publications with their
corresponding European publications
Defines the test methods to measure the residual stresses of films with thickness in the range of 0,01 [mu]m to 10 [mu]m in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.
| Committee |
EPL/47
|
| DevelopmentNote |
Supersedes 14/30259233 DC. (07/2015)
|
| DocumentType |
Standard
|
| Pages |
18
|
| PublisherName |
British Standards Institution
|
| Status |
Current
|
| Supersedes |
This part of IEC 62047 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μm to 10 μm in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods. The films should be deposited onto a substrate of known mechanical properties of Young’s modulus and Poisson’s ratio. These methods are used to determine the residual stresses within thin films deposited on substrate [1]1.
| Standards | Relationship |
| IEC 62047-16:2015 | Identical |
| EN 62047-16:2015 | Identical |
| EN 62047-21:2014 | Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials |
| IEC 62047-21:2014 | Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials |
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