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  • BS EN 62047-9:2011

    Current The latest, up-to-date edition.

    Semiconductor devices. Micro-electromechanical devices Wafer to wafer bonding strength measurement for MEMS

    Available format(s):  Hardcopy, PDF

    Language(s):  English

    Published date:  31-01-2013

    Publisher:  British Standards Institution

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    Table of Contents - (Show below) - (Hide below)

    1 Scope
    2 Normative references
    3 Measurement methods
    Annex A (informative) - Example of bonding
            force
    Annex B (informative) - An example of the
            fabrication process for three-point
            bending specimens
    Bibliography
    Annex ZA (normative) - Normative references to
             international publications with their
             corresponding European publications

    Abstract - (Show below) - (Hide below)

    Specifies bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly.

    Scope - (Show below) - (Hide below)

    This standard describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 µm to several millimeters.

    General Product Information - (Show below) - (Hide below)

    Committee EPL/47
    Development Note Supersedes 07/30172404 DC. (09/2011)
    Document Type Standard
    Publisher British Standards Institution
    Status Current
    Supersedes

    Standards Referencing This Book - (Show below) - (Hide below)

    IEC 62047-4:2008 Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS
    EN ISO 6892-1:2016 Metallic materials - Tensile testing - Part 1: Method of test at room temperature (ISO 6892-1:2016)
    ISO 6892-1:2016 Metallic materials Tensile testing Part 1: Method of test at room temperature
    IEC 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
    EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
    EN 60749-19:2003/A1:2010 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength
    ASTM E 8M : 2004 Standard Test Methods for Tension Testing of Metallic Materials [Metric] (Withdrawn 2008)
    IEC 60747-14-1:2010 Semiconductor devices - Part 14-1: Semiconductor sensors - Generic specification for sensors
    EN 62047-4:2010 Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS
    IEC 60749-19:2003+AMD1:2010 CSV Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength
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