• I.S. EN 62047-9:2011

    Current The latest, up-to-date edition.

    SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 9: WAFER TO WAFER BONDING STRENGTH MEASUREMENT FOR MEMS

    Available format(s):  Hardcopy, PDF

    Language(s):  English

    Published date:  01-01-2011

    Publisher:  National Standards Authority of Ireland

    For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.
    Only cited Standards give presumption of conformance to New Approach Directives/Regulations.

    Dates of withdrawal of national standards are available from NSAI.

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    Table of Contents - (Show below) - (Hide below)

    FOREWORD
    1 Scope
    2 Normative references
    3 Measurement methods
    Annex A (informative) - Example of bonding force
    Annex B (informative) - An example of the fabrication
            process for three-point bending
            specimens
    Bibliography
    Annex ZA (normative) - Normative references to international
             publications with their corresponding European
             publications

    Abstract - (Show below) - (Hide below)

    Specifies bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly.

    General Product Information - (Show below) - (Hide below)

    Development Note For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
    Document Type Standard
    Publisher National Standards Authority of Ireland
    Status Current

    Standards Referencing This Book - (Show below) - (Hide below)

    IEC 62047-4:2008 Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS
    EN ISO 6892-1:2016 Metallic materials - Tensile testing - Part 1: Method of test at room temperature (ISO 6892-1:2016)
    ISO 6892-1:2016 Metallic materials Tensile testing Part 1: Method of test at room temperature
    IEC 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
    EN 60749-19:2003/A1:2010 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength
    IEC 60747-14-1:2010 Semiconductor devices - Part 14-1: Semiconductor sensors - Generic specification for sensors
    IEC 60749-19:2003+AMD1:2010 CSV Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength
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