BS EN 62417:2010
Current
The latest, up-to-date edition.
Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
Hardcopy , PDF
English
30-06-2010
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1 Scope
2 Abbreviations and letter symbols
3 General description
4 Test equipment
5 Test structures
6 Sample size
7 Conditions
8 Procedure
9 Criteria
10 Reporting
Gives a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors.
| Committee |
EPL/47
|
| DevelopmentNote |
Supersedes 07/30163752 DC and 08/30177346 DC. (06/2010)
|
| DocumentType |
Standard
|
| Pages |
12
|
| PublisherName |
British Standards Institution
|
| Status |
Current
|
| Supersedes |
This present standard provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. . It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.
| Standards | Relationship |
| IEC 62417:2010 | Identical |
| EN 62417 : 2010 | Identical |
| EN 61192-1:2003 | Identical |
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