BS IEC 60747-4 : 2007
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 4: MICROWAVE DIODES AND TRANSISTORS
Hardcopy , PDF
11-06-2020
English
01-01-2007
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FOREWORD
1 Scope
2 Normative references
3 Variable capacitance, snap-off diodes and fast-switching
schottky diodes
3.1 Variable capacitance diodes
3.1.1 General
3.1.2 Terminology and letter symbols
3.1.3 Essential ratings and characteristics
3.1.4 Measuring methods
3.2 Snap-off diodes, Schottky diodes
3.2.1 General
3.2.2 Terminology and letter symbols
3.2.3 Essential ratings and characteristics
3.2.4 Measuring methods
4 Mixer diodes and detector diodes
4.1 Mixer diodes used in radar applications
4.1.1 General
4.1.2 Terminology and letter symbols
4.1.3 Essential ratings and characteristics
4.1.4 Measuring methods
4.2 Mixer diodes used in communication applications
4.2.1 General
4.2.2 Terminology and letter symbols
4.2.3 Essential ratings and characteristics
4.2.4 Measuring methods
4.3 Detector diodes
5 Impatt diodes
5.1 Impatt diodes amplifiers
5.1.1 General
5.1.2 Terms and definitions
5.1.3 Essential ratings and characteristics
5.2 Impatt diodes oscillators
6 Gunn diodes
6.1 General
6.2 Terms and definitions
6.3 Essential ratings and characteristics
6.4 Measuring methods
6.4.1 Pulse breakdown voltage
6.4.2 Threshold voltage
6.4.3 Resistance
7 Bipolar transistors
7.1 General
7.2 Terms and definitions
7.3 Essential ratings and characteristics
7.3.1 General
7.3.2 Limiting values (absolute maximum rating system)
7.4 Measuring methods
7.4.1 General
7.4.2 DC characteristics
7.4.3 RF characteristics
7.5 Verifying methods
7.5.1 Load mismatch tolerance ([Psi][L])
7.5.2 Source mismatch tolerance ([Psi][S])
7.5.3 Load mismatch ruggedness ([Psi][R])
8 Field-effect transistors
8.1 General
8.2 Terms and definitions
8.3 Essential ratings and characteristics
8.3.1 General
8.3.2 Limiting values (absolute maximum rating
system)
8.4 Measuring methods
8.4.1 General
8.4.2 DC characteristics
8.4.3 RF characteristics
8.5 Verifying methods
8.5.1 Load mismatch tolerance ([Psi][L])
8.5.2 Source mismatch tolerance ([Psi][S])
8.5.3 Load mismatch ruggedness ([Psi][R])
9 Assessment and reliability - specific requirements
9.1 Electrical test conditions
9.2 Failure criteria and failure-defining characteristics
for acceptance tests
9.3 Failure criteria and failure-defining characteristics
for reliability tests
9.4 Procedure in case of a testing error
Provides requirements for the following categories of discrete devices: - variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication, switching, limiting, phased shift, parametric amplification); - mixer diodes and detector diodes; - avalanche diodes (for direct harmonic generation, amplification); - gunn diodes (for direct harmonic generation); - bipolar transistors (for amplification, oscillation); - field-effect transistors (for amplification, oscillation).
| Committee |
EPL/47
|
| DevelopmentNote |
Supersedes BS 6493-1.4(1992) and 04/30118741 DC. (02/2008)
|
| DocumentType |
Standard
|
| Pages |
272
|
| PublisherName |
British Standards Institution
|
| Status |
Superseded
|
| Supersedes |
| Standards | Relationship |
| IEC 60747-4:2007+AMD1:2017 CSV | Identical |
| IEC 60747-7:2010 | Semiconductor devices - Discrete devices - Part 7: Bipolar transistors |
| IEC 60050-702:1992 | International Electrotechnical Vocabulary (IEV) - Part 702: Oscillations, signals and related devices |
| IEC 60747-8:2010 | Semiconductor devices - Discrete devices - Part 8: Field-effect transistors |
| IEC 60747-1:2006+AMD1:2010 CSV | Semiconductor devices - Part 1: General |
| IEC 60747-16-1:2001+AMD1:2007+AMD2:2017 CSV | Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers |
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