EN 62374-1:2010/AC:2011
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - PART 1: TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB) TEST FOR INTER-METAL LAYERS
01-04-2011
FOREWORD
1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
5 Procedures
6 Lifetime estimation
7 Lifetime dependence on inter-metal layer area
8 Summary
Annex A (informative) - Engineering supplementation for
lifetime estimation
Bibliography
Specifies a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.
| Committee |
SR 47
|
| DocumentType |
Standard
|
| PublisherName |
European Committee for Standards - Electrical
|
| Status |
Current
|
| Standards | Relationship |
| NBN EN 62374-1 : 2010 | Identical |
| PN EN 62374-1 : 2011 AC 2011 | Identical |
| NF EN 62374-1 : 2011 | Identical |
| IEC 62374-1:2010 | Identical |
| NEN EN IEC 62374-1 : 2010 C11 2011 | Identical |
| I.S. EN 62374-1:2010 | Identical |
| BS EN 62374-1:2010 | Identical |
| DIN EN 62374-1:2011-06 | Identical |
| CEI EN 62374-1 : 2012 | Identical |
| UNE-EN 62374-1:2010 | Identical |
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