IEC 60749-8:2002

FOREWORD
INTRODUCTION
1 Scope and object
2 Normative references
3 General terms
   3.1 Units of pressure
   3.2 Standard leak rate
   3.3 Measured leak rate
   3.4 Equivalent standard leak rate
4 Bomb pressure test
5 Fine leak detection: radioactive krypton method
   5.1 Object
   5.2 General description
   5.3 Personnel precautions
   5.4 Procedure
   5.5 Specified conditions
   5.6 Gross leak detection
6 Fine leak detection: tracer gas (helium) method with mass
   spectrometer
   6.1 General
   6.2 Method 1: specimens not filled with helium during
        manufacture - Fixed method
   6.3 Method 2: specimens not filled with helium during
       manufacture - Flexible method
   6.4 Method 3: specimens filled with helium during manufacture
   6.5 Gross leak detection
7 Gross leaks, perfluorocarbon vapour method using electronic
   detection apparatus
   7.1 Object
   7.2 General description
   7.3 Test apparatus
   7.4 Test method
   7.5 Reject criterion
8 Gross leak - Perfluorocarbon - bubble detection method
9 Test condition E, weight-gain gross-leak detection
   9.1 Object
   9.2 Equipment
   9.3 Procedure
   9.4 Failure criteria
10 Penetrant dye gross leak detection
11 Gross leak re-test

Applicable to semiconductor devices (discrete devices and integrated circuits), it determines the leak rate of semiconductor devices.The contents of the corrigenda of April 2003 and August 2003 have been included in this copy.