IEC 62417:2010
Current
The latest, up-to-date edition.
Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users
English - French
22-04-2010
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FOREWORD
1 Scope
2 Abbreviations and letter symbols
3 General description
4 Test equipment
5 Test structures
6 Sample size
7 Conditions
8 Procedure
9 Criteria
10 Reporting
IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.
| Committee |
TC 47
|
| DevelopmentNote |
Stability Date: 2020. (12/2017)
|
| DocumentType |
Standard
|
| Pages |
16
|
| PublisherName |
International Electrotechnical Committee
|
| Status |
Current
|
| Standards | Relationship |
| NBN EN 62417 : 2010 | Identical |
| NEN EN IEC 62417 : 2010 | Identical |
| I.S. EN 62417:2010 | Identical |
| PN EN 62417 : 2010 | Identical |
| UNE-EN 62417:2010 | Identical |
| BS EN 62417:2010 | Identical |
| CEI EN 62417 : 2011 | Identical |
| EN 62417 : 2010 | Identical |
| DIN EN 62417:2010-12 | Identical |
| PNE-FprEN 62417 | Identical |
| IEC TS 62686-1:2015 | Process management for avionics - Electronic components for aerospace, defence and high performance (ADHP) applications - Part 1: General requirements for high reliability integrated circuits and discrete semiconductors |
| PD IEC/TS 62686-1:2015 | Process management for avionics. Electronic components for aerospace, defence and high performance (ADHP) applications General requirements for high reliability integrated circuits and discrete semiconductors |
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