JEDEC JESD78F:2022
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
IC Latch-Up Test
Hardcopy , PDF
20-01-2023
English
01-01-2022
Important note : Users cannot be edited or removed once added to your Multi user PDF.This standard establishes the procedure for testing, evaluation and classification of devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined latch-up stress.
| DocumentType |
Revision
|
| Pages |
86
|
| PublisherName |
JEDEC Solid State Technology Association
|
| Status |
Superseded
|
| SupersededBy | |
| Supersedes |
| DSCC 22210:2023 | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, LOW POWER REPROGRAMMABLE 481,000 LOGIC ELEMENT FLASH FIELD PROGRAMMABLE GATE ARRAY WITH DECOUPLING CAPACITORS, FLIP CHIP Pb FREE BUMP, MONOLITHIC SILICON |
| DSCC 06233D:2023 | MICROCIRCUIT, DIGITAL, RADIATION HARDENED, LOW VOLTAGE CMOS, MINIMUM SKEW ONE-TO-EIGHT CLOCK DRIVER, LVTTL COMPATIBLE INPUTS AND OUTPUTS, MONOLITHIC SILICON |
| DSCC 89764D:2023 | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY, MONOLITHIC SILICON |
| DSCC 01517G:2022 | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 3.3 V, 32K X 8-BIT PROM, MONOLITHIC SILICON |
| DSCC 07239B:2023 | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 16-BIT (8M), STATIC RANDOM ACCESS MEMORY (SRAM), (3.3 V), MONOLITHIC SILICON |
| DSCC 07235B:2023 | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 16-BIT (2M), STATIC RANDOM ACCESS MEMORY (SRAM), (3.3 V), MONOLITHIC SILICON |
| DSCC07241B:2024 | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1M x 4-BIT (4M), STATIC RANDOM ACCESS MEMORY (SRAM), (3.3 V), MONOLITHIC SILICON |
| DSCC 96524L:2024 | MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, HEX INVERTER SCHMITT TRIGGER, MONOLITHIC SILICON |
| DSCC 93225C:2024 | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K x 4 SRAM, MONOLITHIC SILICON |
| DSCC 96556K:2024 | MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 8-BIT SERIAL-IN /PARALLEL-OUT SHIFT REGISTER, MONOLITHIC SILICON |
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