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SEMI MF1188:2007(R2012)

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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TEST METHOD FOR INTERSTITIAL OXYGEN CONTENT OF SILICON BY INFRARED ABSORPTION WITH SHORT BASELINE

Superseded date

15-12-2023

Superseded by

SEMI MF1188:2007(R2018)

Published date

12-01-2013

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Intended to be used as a method for determining the interstitial oxygen content of silicon slices.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (11/2003) Also available in CD-ROM. (10/2007)
DocumentType
Revision
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

SEMI MF1239 : 2005(R2016) TEST METHOD FOR OXYGEN PRECIPITATION CHARACTERISTICS OF SILICON WAFERS BY MEASUREMENT OF INTERSTITIAL OXYGEN REDUCTION
SEMI MF951 : 2005(R2016) TEST METHOD FOR DETERMINATION OF RADIAL INTERSTITIAL OXYGEN VARIATION IN SILICON WAFERS
SEMI M1 : 2017 SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS
SEMI M41 : 2015 SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER DEVICE/ICS
SEMI M6 : 2008 SPECIFICATION FOR SILICON WAFERS FOR USE AS PHOTOVOLTAIC SOLAR CELLS
SEMI M76 : 2010 SPECIFICATION FOR DEVELOPMENTAL 450 MM DIAMETER POLISHED SINGLE CRYSTAL SILICON WAFERS
SEMI MF1619 : 2012(R2018) TEST METHOD FOR MEASUREMENT OF INTERSTITIAL OXYGEN CONTENT OF SILICON WAFERS BY INFRARED ABSORPTION SPECTROSCOPY WITH P-POLARIZED RADIATION INCIDENT AT THE BREWSTER ANGLE
SEMI M47 : 2007 SPECIFICATION FOR SILICON-ON-INSULATOR (SOI) WAFERS FOR CMOS LSI APPLICATIONS
SEMI M71 : 2012 SPECIFICATION FOR SILICON-ON-INSULATOR (SOI) WAFERS FOR CMOS LSI
SEMI M44 : 2005(R2011) GUIDE TO CONVERSION FACTORS FOR INTERSTITIAL OXYGEN IN SILICON
SEMI PV17 : OCT 2012 SPECIFICATION FOR VIRGIN SILICON FEEDSTOCK MATERIALS FOR PHOTOVOLTAIC APPLICATIONS
SEMI PV22 : 2017 SPECIFICATION FOR SILICON WAFERS FOR USE IN PHOTOVOLTAIC SOLAR CELLS

SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY
SEMI M44 : 2005(R2011) GUIDE TO CONVERSION FACTORS FOR INTERSTITIAL OXYGEN IN SILICON
SEMI C29 : 2010 SPECIFICATIONS AND GUIDE FOR 4.9% HYDROFLUORIC ACID (10:1 V/V)

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