SEMI MF1727 : 2010(R2015)
Current
Current
The latest, up-to-date edition.
PRACTICE FOR DETECTION OF OXIDATION INDUCED DEFECTS IN POLISHED SILICON WAFERS
Published date
12-01-2013
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Specifies the detection of crystalline defects in the surface region of silicon wafers. The defects are induced or enhanced by oxidation cycles encountered in normal device processing.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (02/2004)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Current
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| SEMI MF1810 : 2010(R2015) | TEST METHOD FOR COUNTING PREFERENTIALLY ETCHED OR DECORATED SURFACE DEFECTS IN SILICON WAFERS |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M41 : 2015 | SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER DEVICE/ICS |
| SEMI MF154 : 2005(R2016) | GUIDE FOR IDENTIFICATION OF STRUCTURES AND CONTAMINANTS SEEN ON SPECULAR SILICON SURFACES |
| SEMI M57 : 2016 | SPECIFICATION FOR SILICON ANNEALED WAFERS |
| SEMI MF1809 : 2010(R2015) | GUIDE FOR SELECTION AND USE OF ETCHING SOLUTIONS TO DELINEATE STRUCTURAL DEFECTS IN SILICON |
| SEMI M11 : 2004 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS FOR INTEGRATED CIRCUIT (IC) APPLICATIONS |
| SEMI C54 : 2016 | SPECIFICATION FOR OXYGEN |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI C28 : 2011 | SPECIFICATIONS FOR HYDROFLUORIC ACID |
| SEMI C58 : 2016 | SPECIFICATION FOR HYDROGEN |
| SEMI MF1810 : 2010(R2015) | TEST METHOD FOR COUNTING PREFERENTIALLY ETCHED OR DECORATED SURFACE DEFECTS IN SILICON WAFERS |
| SEMI MF1809 : 2010(R2015) | GUIDE FOR SELECTION AND USE OF ETCHING SOLUTIONS TO DELINEATE STRUCTURAL DEFECTS IN SILICON |
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