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SEMI MF1727 : 2010(R2015)

SEMI MF1727 : 2010(R2015)

Current

Current

The latest, up-to-date edition.

PRACTICE FOR DETECTION OF OXIDATION INDUCED DEFECTS IN POLISHED SILICON WAFERS

Published date

12-01-2013

Publisher

Semiconductor Equipment & Materials Institute

Specifies the detection of crystalline defects in the surface region of silicon wafers. The defects are induced or enhanced by oxidation cycles encountered in normal device processing.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (02/2004)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Current

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