SEMI MF673 : 2017
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
TEST METHOD FOR MEASURING RESISTIVITY OF SEMICONDUCTOR WAFERS OR SHEET RESISTANCE OF SEMICONDUCTOR FILMS WITH A NONCONTACT EDDY-CURRENT GAUGE
Superseded date
05-07-2022
Superseded by
Published date
12-01-2013
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Contains the nondestructive measurement of bulk resistivity of silicon and certain gallium-arsenide wafers and of the sheet resistance of thin films of silicon or gallium-arsenide fabricated on a limited range of substrates at the wafer center point using a noncontact eddy-current gauge.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (02/2005)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI PV1 : 2011(R2018) | TEST METHOD FOR MEASURING TRACE ELEMENTS IN SILICON FEEDSTOCK FOR SILICON SOLAR CELLS BY HIGH-MASS RESOLUTION GLOW DISCHARGE MASS SPECTROMETRY |
| SEMI M49 : 2016 | GUIDE FOR SPECIFYING GEOMETRY MEASUREMENT SYSTEMS FOR SILICON WAFERS FOR THE 130 NM TO 16 NM TECHNOLOGY GENERATIONS |
| SEMI M42 : 2016 | SPECIFICATION FOR COMPOUND SEMICONDUCTOR EPITAXIAL WAFERS |
| SEMI MF1527 : 2007 | GUIDE FOR APPLICATION OF CERTIFIED REFERENCE MATERIALS AND REFERENCE WAFERS FOR CALIBRATION AND CONTROL OF INSTRUMENTS FOR MEASURING RESISTIVITY OF SILICON |
| SEMI M76 : 2010 | SPECIFICATION FOR DEVELOPMENTAL 450 MM DIAMETER POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M6 : 2008 | SPECIFICATION FOR SILICON WAFERS FOR USE AS PHOTOVOLTAIC SOLAR CELLS |
| SEMI PV28 : 2016 | TEST METHOD FOR MEASURING RESISTIVITY OR SHEET RESISTANCE WITH A SINGLE-SIDED NONCONTACT EDDY-CURRENT GAUGE |
| SEMI M4 : NOV 2003 | SPECIFICATIONS FOR SOS EPITAXIAL WAFERS |
| SEMI MF391 : 2010E | TEST METHODS FOR MINORITY CARRIER DIFFUSION LENGTH IN EXTRINSIC SEMICONDUCTORS BY MEASUREMENT OF STEADY-STATE SURFACE PHOTOVOLTAGE |
| SEMI M79 : 2018 | SPECIFICATION FOR ROUND 100 MM POLISHED MONOCRYSTALLINE GERMANIUM WAFERS FOR SOLAR CELL APPLICATIONS |
| SEMI MF1535 : 2015 | TEST METHOD FOR CARRIER RECOMBINATION LIFETIME IN ELECTRONIC-GRADE SILICON WAFERS BY NONCONTACT MEASUREMENT OF PHOTOCONDUCTIVITY DECAY BY MICROWAVE REFLECTANCE |
| SEMI M55 : 2017 | SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON CARBIDE WAFERS |
| SEMI PV9 : 2011(R2015) | TEST METHOD FOR EXCESS CHARGE CARRIER DECAY IN PV SILICON MATERIALS BY NON-CONTACT MEASUREMENTS OF MICROWAVE REFLECTANCE AFTER A SHORT ILLUMINATION PULSE |
| SEMI PV49 : 2013(R2018) | TEST METHOD FOR THE MEASUREMENT OF ELEMENTAL IMPURITY CONCENTRATIONS IN SILICON FEEDSTOCK FOR SILICON SOLAR CELLS BY BULK DIGESTION, INDUCTIVELY COUPLED-PLASMA MASS SPECTROMETRY |
| SEMI MF1618 : 2010(R2015) | PRACTICE FOR DETERMINATION OF UNIFORMITY OF THIN FILMS ON SILICON WAFERS |
| SEMI PV22 : 2017 | SPECIFICATION FOR SILICON WAFERS FOR USE IN PHOTOVOLTAIC SOLAR CELLS |
| SEMI M86 : 2015 | SPECIFICATION FOR POLISHED MONOCRYSTALLINE C-PLANE GALLIUM NITRIDE WAFERS |
| SEMI MF81 : 2005(R2016) | TEST METHOD FOR MEASURING RADIAL RESISTIVITY VARIATION ON SILICON WAFERS |
| SEMI MF84:2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE |
| SEMI MF533 : 2010(R2016) | TEST METHODS FOR THICKNESS AND THICKNESS VARIATION OF SILICON WAFERS |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI MF1527 : 2007 | GUIDE FOR APPLICATION OF CERTIFIED REFERENCE MATERIALS AND REFERENCE WAFERS FOR CALIBRATION AND CONTROL OF INSTRUMENTS FOR MEASURING RESISTIVITY OF SILICON |
| SEMI MF374 :2012(R2018) | TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE |
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