17/30343732 DC : 0
NA
Status of Standard is Unknown
BS EN 60747-9 - SEMICONDUCTOR DEVICES - PART 9: DISCRETE DEVICES - INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS)
Hardcopy , PDF
English
FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Letter symbols
5 Essential ratings and characteristics
6 Measuring methods
7 Acceptance and reliability
Annex A (normative) - Measuring method for collector-emitter
breakdown voltage
Annex B (normative) - Measuring method for collector-emitter
sustaining voltage
Annex C (normative) - Measuring method for inductive
load turn-off current under specified conditions
Annex D (normative) - Forward biased safe operating
area (FBSOA)
Bibliography
BS EN 60747-9.
| Committee |
EPL/47
|
| DocumentType |
Draft
|
| Pages |
76
|
| PublisherName |
British Standards Institution
|
| Status |
NA
|
| IEC 60747-7:2010 | Semiconductor devices - Discrete devices - Part 7: Bipolar transistors |
| IEC 60747-1:2006+AMD1:2010 CSV | Semiconductor devices - Part 1: General |
| IEC 60747-6:2016 | Semiconductor devices - Part 6: Discrete devices - Thyristors |
| IEC 60050-521:2002 | International Electrotechnical Vocabulary (IEV) - Part 521: Semiconductor devices and integrated circuits |
| IEC 60747-2:2016 | Semiconductor devices - Part 2: Discrete devices - Rectifier diodes |
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