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    NA Status of Standard is Unknown

    BS EN 60747-9 - SEMICONDUCTOR DEVICES - PART 9: DISCRETE DEVICES - INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS)

    Available format(s):  Hardcopy, PDF

    Language(s):  English

    Published date: 

    Publisher:  British Standards Institution

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    Table of Contents - (Show below) - (Hide below)

    FOREWORD
    1 Scope
    2 Normative references
    3 Terms and definitions
    4 Letter symbols
    5 Essential ratings and characteristics
    6 Measuring methods
    7 Acceptance and reliability
    Annex A (normative) - Measuring method for collector-emitter
            breakdown voltage
    Annex B (normative) - Measuring method for collector-emitter
            sustaining voltage
    Annex C (normative) - Measuring method for inductive
            load turn-off current under specified conditions
    Annex D (normative) - Forward biased safe operating
            area (FBSOA)
    Bibliography

    General Product Information - (Show below) - (Hide below)

    Comment Closes On
    Committee EPL/47
    Document Type Draft
    Publisher British Standards Institution
    Status NA

    Standards Referencing This Book - (Show below) - (Hide below)

    IEC 60747-7:2010 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
    IEC 60747-1:2006+AMD1:2010 CSV Semiconductor devices - Part 1: General
    IEC 60747-6:2016 Semiconductor devices - Part 6: Discrete devices - Thyristors
    IEC 60050-521:2002 International Electrotechnical Vocabulary (IEV) - Part 521: Semiconductor devices and integrated circuits
    IEC 60747-2:2016 Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
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