BS 6493-1.2:1984
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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Semiconductor devices. Discrete devices Recommendations for rectifier diodes
Hardcopy , PDF
15-07-2000
English
31-05-1984
Important note : Users cannot be edited or removed once added to your Multi user PDF.
National foreword
Committee responsible
Chapter I: General
1. Introductory note
2. Scope
3. Marking of rectifier diodes
Chapter II: Terminology and letter symbols
1. General terms
2. Terms related to ratings and characteristics
2.1 Voltages
2.2 Currents
2.3 Power dissipations
2.4 Other characteristics
3. Letter symbols
3.1 General
3.2 Additional general subscripts
3.3 List of letter symbols
Chapter III: Essential ratings and characteristics
1. General
2. Rating conditions
3. Voltage and current ratings (limiting values)
4. Frequency ratings (limiting values)
5. Power dissipation ratings (limiting values)
6. Temperature ratings (limiting values)
7. Electrical characteristics
7.10 Forward recover time (tfr)(when appropriate)
8. Thermal characteristics
9. Mechanical characteristics and other data
10. Application data
Chapter IV: Methods of measurement
1. Electrical characteristics
1.1 General precautions
1.2 Forward voltage
1.3 Breakdown voltage of avalanche and controlled-
avalanche rectifier diodes
1.4 Reverse current
1.5 Recovered charge and reverse recovery time (Qr,trr)
1.6 Forward recovery time tfr and peak forward recovery
voltage VFRM
2. Thermal measurements
2.1 Reference-point temperature
2.2 Thermal resistance and transient thermal impedance
3. Verification of ratings (limiting values)
3.1 Surge (non-repetitive) forward current
3.2 Non-repetitive peak reverse voltage
3.3 Peak reverse power (repetitive or non-repetitive)
(PRRM, PRSM) of avalanche and controlled-avalanche
rectifier diodes
3.4 Peak case non-rupture current
4. Thermal cycling load test
Chapter V: Acceptance and reliability
Section I - Type tests and routine tests
1. Type tests
2. Routine tests
3. Measuring and test methods
Section II - Electrical endurance tests
1. General requirements
2. Specific requirements
Appendix - Calculation methods for time varying load
capability
Recommendations for the use of rectifier diodes.
| Committee |
EPL/47
|
| DocumentType |
Standard
|
| Pages |
60
|
| PublisherName |
British Standards Institution
|
| Status |
Superseded
|
| SupersededBy |
| Standards | Relationship |
| IEC 60747-2:2016 | Identical |
| BS QC 750103:1990 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for low-frequency amplification |
| BS IEC 60747-10:1991 | Semiconductor devices Generic specification for discrete devices and integrated circuits |
| BS QC 750107:1991 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for high-frequency amplifications |
| BS QC 750108:1990 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A |
| BS EN 120000:1996 | Harmonized system of quality assessment for electronic components. General specification: semiconductor optoelectronic and liquid crystal devices |
| BS QC 750106:1993 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Field-effect transistors for case-rated power amplifier applications |
| BS QC 720100:1991 | Harmonized system of quality assessment for electronic components. Semiconductor devices. Sectional specification for optoelectronic devices |
| BS QC700000(1991) : 1991 | HARMONIZED SYSTEM OF QUALITY ASSESSMENT FOR ELECTRIC COMPONENTS - GENERIC SPECIFICATION FOR DISCRETE DEVICES AND INTEGRATED CIRCUITS |
| BS QC 750109:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A |
| BS QC 750102:1990 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Ambient-rated bipolar transistors for low and high-frequency amplification |
| BS QC 750104:1991 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Bipolar transistors for switching applications |
| BS 6493-1.1:1984 | Semiconductor devices. Discrete devices General |
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