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  • BS 6493-1.2:1984

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    Superseded A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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    Semiconductor devices. Discrete devices Recommendations for rectifier diodes

    Available format(s):  Hardcopy, PDF

    Superseded date:  15-07-2000

    Language(s):  English

    Published date:  31-05-1984

    Publisher:  British Standards Institution

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    Table of Contents - (Show below) - (Hide below)

    National foreword
    Committee responsible
    Chapter I: General
    1. Introductory note
    2. Scope
    3. Marking of rectifier diodes
    Chapter II: Terminology and letter symbols
    1. General terms
    2. Terms related to ratings and characteristics
    2.1 Voltages
    2.2 Currents
    2.3 Power dissipations
    2.4 Other characteristics
    3. Letter symbols
    3.1 General
    3.2 Additional general subscripts
    3.3 List of letter symbols
    Chapter III: Essential ratings and characteristics
    1. General
    2. Rating conditions
    3. Voltage and current ratings (limiting values)
    4. Frequency ratings (limiting values)
    5. Power dissipation ratings (limiting values)
    6. Temperature ratings (limiting values)
    7. Electrical characteristics
    7.10 Forward recover time (tfr)(when appropriate)
    8. Thermal characteristics
    9. Mechanical characteristics and other data
    10. Application data
    Chapter IV: Methods of measurement
    1. Electrical characteristics
    1.1 General precautions
    1.2 Forward voltage
    1.3 Breakdown voltage of avalanche and controlled-
         avalanche rectifier diodes
    1.4 Reverse current
    1.5 Recovered charge and reverse recovery time (Qr,trr)
    1.6 Forward recovery time tfr and peak forward recovery
         voltage VFRM
    2. Thermal measurements
    2.1 Reference-point temperature
    2.2 Thermal resistance and transient thermal impedance
    3. Verification of ratings (limiting values)
    3.1 Surge (non-repetitive) forward current
    3.2 Non-repetitive peak reverse voltage
    3.3 Peak reverse power (repetitive or non-repetitive)
         (PRRM, PRSM) of avalanche and controlled-avalanche
         rectifier diodes
    3.4 Peak case non-rupture current
    4. Thermal cycling load test
    Chapter V: Acceptance and reliability
    Section I - Type tests and routine tests
    1. Type tests
    2. Routine tests
    3. Measuring and test methods
    Section II - Electrical endurance tests
    1. General requirements
    2. Specific requirements
    Appendix - Calculation methods for time varying load
               capability

    Abstract - (Show below) - (Hide below)

    Recommendations for the use of rectifier diodes.

    General Product Information - (Show below) - (Hide below)

    Committee EPL/47
    Document Type Standard
    Publisher British Standards Institution
    Status Superseded
    Superseded By

    Standards Referenced By This Book - (Show below) - (Hide below)

    BS QC 750103:1990 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for low-frequency amplification
    BS IEC 60747-10:1991 Semiconductor devices Generic specification for discrete devices and integrated circuits
    BS QC 750107:1991 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for high-frequency amplifications
    BS QC 750108:1990 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A
    BS EN 120000:1996 Harmonized system of quality assessment for electronic components. General specification: semiconductor optoelectronic and liquid crystal devices
    BS QC 750106:1993 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Field-effect transistors for case-rated power amplifier applications
    BS QC 720100:1991 Harmonized system of quality assessment for electronic components. Semiconductor devices. Sectional specification for optoelectronic devices
    BS QC700000(1991) : 1991 HARMONIZED SYSTEM OF QUALITY ASSESSMENT FOR ELECTRIC COMPONENTS - GENERIC SPECIFICATION FOR DISCRETE DEVICES AND INTEGRATED CIRCUITS
    BS QC 750109:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
    BS QC 750102:1990 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Ambient-rated bipolar transistors for low and high-frequency amplification
    BS QC 750104:1991 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Bipolar transistors for switching applications
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