BS EN 60749-25:2003

1 Scope
2 Normative references
3 Terms and definitions
4 Test apparatus
5 Procedure
  5.1 Initial measurements
  5.2 Conditioning
  5.3 Cycle rates
  5.4 Upper and lower soak times
  5.5 Upper and lower soak temperatures
  5.6 Soak modes
  5.7 Cycle time
  5.8 Ramp rate
  5.9 Load transfer time
  5.10 Recovery
  5.11 Final measurements
  5.12 Failure criteria
6 Summary
Annex ZA (normative) - Normative references to international
         publications with their corresponding European
         publications

Provides a test procedure for determining the ability of semiconductor devices and components and/or board assemblies to withstand mechanical stresses induced by alternating high and low temperature extremes.

Provides a test procedure for determining the ability of semiconductor devices and components and/or board assemblies to withstand mechanical stresses induced by alternating high and low temperature extremes. Permanent changes in electrical and/or physical characteristics can result from these mechanical stresses. Applies to single, dual and triple chamber temperature cycling and covers component and solder interconnection testing.