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IEC 60749-38:2008

Current

Current

The latest, up-to-date edition.

Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory

Available format(s)

Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users

Language(s)

English - French

Published date

12-02-2008

€83.17
Excluding VAT

FOREWORD
1 Scope
2 Terms and definitions
3 Test apparatus
  3.1 Measurement equipment
  3.2 Alpha radiation source
      3.2.1 Background information
      3.2.2 Preferred sources
      3.2.3 Variation in results
      3.2.4 Effect of high radiation levels
      3.2.5 Measurement accuracy
    3.3 Test sample
4 Procedure
  4.1 Alpha radiation accelerated soft error test
      4.1.1 Surface preparation
      4.1.2 Power supply voltage
      4.1.3 Ambient temperature
      4.1.4 Core cycle time
      4.1.5 Data pattern
      4.1.6 Distance between chip and radiation source
      4.1.7 Number of measurement samples
  4.2 Real-time soft error test
      4.2.1 General
      4.2.2 Power supply voltage
      4.2.3 Ambient temperature
      4.2.4 Operating frequency
      4.2.5 Data pattern
      4.2.6 Test time
      4.2.7 Number of test samples
      4.2.8 Environmental neutron testing
  4.3 Neutron radiation accelerated soft error test
5 Evaluation
  5.1 Alpha radiation accelerated soft error test
  5.2 Real-time soft error test
6 Summary
Bibliography

This part of IEC 60749 establishes a procedure for measuring the soft error susceptibility of semiconductor devices with memory when subjected to energetic particles such as alpha radiation. Two tests are described; an accelerated test using an alpha radiation source and an (unaccelerated) real-time system test where any errors are generated under conditions of naturally occurring radiation which can be alpha or other radiation such as neutron. To completely characterize the soft error capability of an integrated circuit with memory, the device must be tested for broad high energy spectrum and thermal neutrons using additional test methods. This test method may be applied to any type of integrated circuit with memory device.

DevelopmentNote
Stability Date: 2021. (11/2017)
DocumentType
Standard
Pages
26
PublisherName
International Electrotechnical Committee
Status
Current

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BS EN 60749-44:2016 Semiconductor devices. Mechanical and climatic test methods Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
BIS IS/IEC 61558-2-6 : 1ED 2016 SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 44: NEUTRON BEAM IRRADIATED SINGLE EVENT EFFECT (SEE) TEST METHOD FOR SEMICONDUCTOR DEVICES
17/30352610 DC : 0 BS IEC 62396-2 ED2.0 - PROCESS MANAGEMENT FOR AVIONICS - ATMOSPHERIC RADIATION EFFECTS - PART 2: GUIDELINES FOR SINGLE EVENT EFFECTS TESTING FOR AVIONICS SYSTEMS
IEC 62396-2:2017 Process management for avionics - Atmospheric radiation effects - Part 2: Guidelines for single event effects testing for avionics systems
14/30299002 DC : 0 BS EN 60749-44 - SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 44: NEUTRON BEAM IRRADIATED SINGLE EVENT EFFECT (SEE) TEST METHOD FOR SEMICONDUCTOR DEVICES
IEC TS 62686-1:2015 Process management for avionics - Electronic components for aerospace, defence and high performance (ADHP) applications - Part 1: General requirements for high reliability integrated circuits and discrete semiconductors
PD IEC/TS 62686-1:2015 Process management for avionics. Electronic components for aerospace, defence and high performance (ADHP) applications General requirements for high reliability integrated circuits and discrete semiconductors
EN 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices

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