SEMI M61 : 2007(R 2019)
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
SPECIFICATION FOR SILICON EPITAXIAL WAFERS WITH BURIED LAYERS
Hardcopy
16-11-2023
English
12-01-2013
Important note : Users cannot be edited or removed once added to your Multi user PDF.Describes the properties of silicon epitaxial wafers with buried layers that relate to the characteristics of photolithography, buried layer, and buried layer pattern after the deposition of the epitaxial layer.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (07/2005) Also available in CD-ROM. (02/2007)
|
| DocumentType |
Revision
|
| Pages |
0
|
| PublisherName |
Semiconductor Equipment & Materials Institute
|
| Status |
Superseded
|
| SupersededBy |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M18 : 2012 | GUIDE FOR DEVELOPING SPECIFICATION FORMS FOR ORDER ENTRY OF SILICON WAFERS |
| SEMI M32 : 2007 | GUIDE TO STATISTICAL SPECIFICATIONS |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI M18 : 2012 | GUIDE FOR DEVELOPING SPECIFICATION FORMS FOR ORDER ENTRY OF SILICON WAFERS |
| SEMI M20 : 2015 | PRACTICE FOR ESTABLISHING A WAFER COORDINATE SYSTEM |
| SEMI M2 : 2003 | SPECIFICATION FOR SILICON EPITAXIAL WAFERS FOR DISCRETE DEVICE APPLICATIONS |
Access your standards online with a subscription
Features
-
Simple online access to standards, technical information and regulations.
-
Critical updates of standards and customisable alerts and notifications.
-
Multi-user online standards collection: secure, flexible and cost effective.