SEMI M71 : 2012
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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SPECIFICATION FOR SILICON-ON-INSULATOR (SOI) WAFERS FOR CMOS LSI
Superseded date
05-10-2020
Superseded by
Published date
12-01-2013
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Specifies thin-layer silicon-on-insulator (SOI) wafer requirements for CMOS large-scale integrated circuit (LSI) devices.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (06/2007)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M41 : 2015 | SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER DEVICE/ICS |
| SEMI M18 : 2012 | GUIDE FOR DEVELOPING SPECIFICATION FORMS FOR ORDER ENTRY OF SILICON WAFERS |
| SEMI 3D4 : 2015 | GUIDE FOR METROLOGY FOR MEASURING THICKNESS, TOTAL THICKNESS VARIATION (TTV), BOW, WARP/SORI, AND FLATNESS OF BONDED WAFER STACKS |
| SEMI MF81 : 2005(R2016) | TEST METHOD FOR MEASURING RADIAL RESISTIVITY VARIATION ON SILICON WAFERS |
| SEMI MF84:2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE |
| SEMI M35 : 2014 | GUIDE FOR DEVELOPING SPECIFICATIONS FOR SILICON WAFER SURFACE FEATURES DETECTED BY AUTOMATED INSPECTION |
| SEMI MF1188:2007(R2012) | TEST METHOD FOR INTERSTITIAL OXYGEN CONTENT OF SILICON BY INFRARED ABSORPTION WITH SHORT BASELINE |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI MF42 : 2016 | TEST METHOD FOR CONDUCTIVITY TYPE OF EXTRINSIC SEMICONDUCTING MATERIALS |
| SEMI M20 : 2015 | PRACTICE FOR ESTABLISHING A WAFER COORDINATE SYSTEM |
| SEMI M41 : 2015 | SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER DEVICE/ICS |
| SEMI MF1152 : 2016 | TEST METHOD FOR DIMENSIONS OF NOTCHES ON SILICON WAFERS |
| SEMI M62 : 2017 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS |
| SEMI MF523 : 2007(R2018) | PRACTICE FOR UNAIDED VISUAL INSPECTION OF POLISHED SILICON WAFER SURFACES |
| SEMI MF847 : 2016 | TEST METHOD FOR MEASURING CRYSTALLOGRAPHIC ORIENTATION OF FLATS ON SINGLE CRYSTAL SILICON WAFERS BY X-RAY TECHNIQUES |
| SEMI MF1809 : 2010(R2015) | GUIDE FOR SELECTION AND USE OF ETCHING SOLUTIONS TO DELINEATE STRUCTURAL DEFECTS IN SILICON |
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