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BS 3934:1965

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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Specification for dimensions of semiconductor devices and integrated electronic circuits

Available format(s)

Hardcopy , PDF

Superseded date

01-04-1992

Language(s)

English

Published date

30-11-1965

Drawings of outline bases and gauges of various forms of semiconductor device. Guidance on the interpretation and use of drawings. Cross reference index.

Committee
EPL/47
DocumentType
Standard
Pages
270
PublisherName
British Standards Institution
Status
Superseded
SupersededBy

Standards Relationship
IEC 60191-1:2007 Similar to
IEC 60191-3A:1976 Similar to
IEC 60191-2:2012 DB Similar to

BS QC 750005:1987 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes
BS EN 150007:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated bipolar transistors for high frequency amplification
BS EN 120006:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: pin-photodiodes for fibre optic applications
BS G 209:1970 Specification for transformer rectifier units
BS EN 150003:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated bipolar transistors for low frequency amplification
BS QC 750001:1986 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Signal diodes, switching diodes and controlled avalanche diodes
BS 9305 N001:1972 Detail specification for silicon voltage regulator diodes. 1.5 W, 3.3 to 33 V (5%), hermetically sealed. General application category Q
BS QC 750103:1990 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for low-frequency amplification
BS 9301 N002:1971 Detail specification for general purpose silicon signal diodes. 150 mA, 150 V, hermetically sealed, glass encapsulation. General application category Q
BS EN 150011:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated thyristors
BS 9364 N016:1979 Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
BS CECC 90000:1991 Harmonized system of quality assessment for electronic components. Generic specification: monolithic integrated circuits
BS CECC 20000:1983 Harmonized system of quality assessment for electronic components: generic specification: semiconductor optoelectronic and liquid crystal devices
BS CECC 90000:1985 Harmonized system of quality assessment for electronic components. Generic specification: monolithic integrated circuits
BS 9305 N041:1972 Detail specification for silicon voltage regulator diodes. 400 mW, 2.7 to 33 V (5%), hermetically sealed, glass encapsulation. General application category Q
BS CECC 90104:1981 Specification for harmonized system of quality assessment for electronic components. Family specification: C. Mos digital integrated circuits, series 4000B and 4000UB
BS EN 150012:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: single gate field-effect transistors
BS QC 750110:1990 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Reverse blocking triode thyristors, ambient and case-rated, up to 100 A
BS EN 120002:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: infrared emitting diodes, infrared emitting diode arrays
BS 9364 N017:1979 Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
BS QC 750107:1991 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for high-frequency amplifications
BS EN 150010:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient rated thyristors
BS CECC 50008:1982 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated rectifier diodes
BS EN 120003:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays
BS 6493-1.1:1984 Semiconductor devices. Discrete devices General
BS CECC 63000:1990 Harmonized system of quality assessment for electronic components. Generic specification: film and hybrid integrated circuits
BS CECC 90103:1983 Specification for harmonized system of quality assessment for electronic components. Family specification: digital integrated TTL low power SCHOTTKY circuits, series 54LS, 64LS, 74LS, 84LS
BS CECC 50000:1987 Harmonized system of quality assessment for electronic components. Generic specification: discrete semiconductor devices
BS 9450:1998 Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures). Generic data and methods of test
BS CECC 90104:1990 Specification for harmonized system of quality assessment for electronic components. Family specification: C. MOS digital integrated circuits series 4000 B and 4000 UB
BS 9364 N013:1979 Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
BS EN 150004:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: bipolar transistors for switching applications
BS 6943:1988 Classification of shapes of electronic components for placement on printed wiring boards
BS EN 150013:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: current regulator and current reference diodes
BS QC 750108:1990 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A
BS 9364 N008 and N010:1978 Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
BS EN 120000:1996 Harmonized system of quality assessment for electronic components. General specification: semiconductor optoelectronic and liquid crystal devices
BS 9400:1970 Specification for integrated electronic circuits and micro-assemblies of assessed quality (qualification approval procedures): generic data and methods of test
BS 9300:1969 Specification for semiconductor devices of assessed quality: generic data and methods of test
BS CECC 90103:1980 Specification for harmonized system of quality assessment for electronic components. Family specification: digital integrated TTL low power SCHOTTKY circuits, series 54LS, 64LS, 74LS, 84LS
BS EN 150006:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Variable capacitance diode(s)
BS EN 120005:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)
BS EN 150001:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: general purpose semiconductor diodes
BS QC 750112:1988 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz
BS E9375:1975 Specification. Harmonized system of quality assessment for electronic components. Blank detail specification: voltage regulator diodes and voltage reference diodes excluding precision-voltage temperature-compensated reference diodes
BS 9305 N042:1972 Detail specification for silicon voltage regulator diodes. 1.5 W, 6.8 to 200 V (5%), hermetically sealed. General application category C
BS 9364 N007 and N009:1978 Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
BS QC 760000:1990 Harmonized system of quality assessment for electronic components. Film and hybrid film integrated circuits. Generic specification
BS EN 120004:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Ambient rated photocouplers with phototransistor output
BS 9450:1975 Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures): generic data and methods of test
BS CECC 90101:1980 Specification for harmonized system of quality assessment for electronic components. Family specification: digital integrated TTL circuits, series 54, 64, 74, 84
BS QC 750102:1990 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Ambient-rated bipolar transistors for low and high-frequency amplification
BS CECC 50009:1982 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated rectifier diodes
BS 9305 N044:1974 Detail specification for silicon voltage regulator diodes. 1.0 W, 3.3 to 33 V (5%), hermetically sealed. Full assessment level
BS 9364 N012:1978 Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
BS 9364 N011:1978 Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
BS EN 190000:1996 Harmonized system of quality assessment for electronic components. Generic specification: monolithic integrated circuits
BS E9372:1976 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated bipolar transistors for low and high frequency amplification
EN 190000:1995 Generic Specification: Monolithic integrated circuits
EN 150012 : 1991 Blank Detail Specification: Single gate field-effect transistors

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