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BS EN 60749-34:2010

Current

Current

The latest, up-to-date edition.

Semiconductor devices. Mechanical and climatic test methods Power cycling

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

28-02-2011

€140.23
Excluding VAT

1 Scope and object
2 Normative references
3 Terms and definitions
4 Test apparatus
5 Procedure
6 Test conditions
7 Precautions
8 Measurements
9 Failure criteria
10 Summary
Bibliography
Annex ZA (normative) - Normative references to
         international publications with their
         corresponding European publications

Provides a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life. Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive.

Committee
EPL/47
DevelopmentNote
Supersedes 02/207672 DC. (10/2004) Supersedes 09/30209939 DC. (02/2011)
DocumentType
Standard
Pages
14
PublisherName
British Standards Institution
Status
Current
Supersedes

This part of IEC 60749 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life (see IEC 60749-23). Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive.

NOTE It is not the intention of this specification to provide prediction models for lifetime evaluation.

Standards Relationship
UNE-EN 60749-34:2011 Identical
NF EN 60749-34 : 2011 Identical
DIN EN 60749-34:2011-05 Identical
NBN EN 60749-34 : 2011 Identical
I.S. EN 60749-34:2010 Identical
EN 60749-34:2010 Identical
IEC 60749-34:2010 Identical

EN 60749-23:2004/A1:2011 SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 23: HIGH TEMPERATURE OPERATING LIFE
IEC 60747-1:2006+AMD1:2010 CSV Semiconductor devices - Part 1: General
IEC 60749-3:2017 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination
EN 60749-3:2017 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination
IEC 60747-6:2016 Semiconductor devices - Part 6: Discrete devices - Thyristors
IEC 60747-2:2016 Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
IEC 60749-23:2004+AMD1:2011 CSV Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life

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