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BS IEC 60747-9:2007

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

View Superseded by

Semiconductor devices. Discrete devices Insulated-gate bipolar transistors (IGBTs)

Available format(s)

Hardcopy , PDF

Superseded date

22-11-2019

Superseded by

BS IEC 60747-9:2019

Language(s)

English

Published date

30-11-2007

€322.53
Excluding VAT

1 Scope
2 Normative references
3 Terms and definitions
  3.1 Graphical symbol of IGBT
  3.2 General terms
  3.3 Terms related to ratings and characteristics;
      voltages and currents
  3.4 Terms related to ratings and characteristics;
      other characteristics
4 Letter symbols
  4.1 General
  4.2 Additional general subscripts
  4.3 List of letter symbols
5 Essential ratings and characteristics
  5.1 Ratings (limiting values)
  5.2 Characteristics
6 Measuring methods
  6.1 General
  6.2 Verification of ratings (limiting values)
  6.3 Methods of measurement
7 Acceptance and reliability
  7.1 General requirements
  7.2 Specific requirements
  7.3 Type tests and routine tests
Annex A (normative) Measuring method for collector-emitter
                    breakdown voltage
Annex B (normative) Measuring method for inductive load
                    turn-off current under specified conditions
Annex C (normative) Forward biased safe operating area (FBSOA)
Annex D (normative) Case non-rupture
Bibliography

Provides product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).

Committee
EPL/47
DevelopmentNote
Supersedes 93/200600 DC. (01/2003) Supersedes 98/231398 DC. (05/2005) Supersedes 04/30113287 DC. (11/2007)
DocumentType
Standard
Pages
60
PublisherName
British Standards Institution
Status
Superseded
SupersededBy
Supersedes

This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature.

Standards Relationship
IEC 60747-9:2007 Identical

IEC 60747-7:2010 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
IEC 60747-1:2006+AMD1:2010 CSV Semiconductor devices - Part 1: General
IEC 60747-6:2016 Semiconductor devices - Part 6: Discrete devices - Thyristors
IEC 60050-521:2002 International Electrotechnical Vocabulary (IEV) - Part 521: Semiconductor devices and integrated circuits
IEC 60747-2:2016 Semiconductor devices - Part 2: Discrete devices - Rectifier diodes

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