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  • IEC 60747-9:2007

    View superseded by
    Superseded A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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    Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

    Available format(s):  Hardcopy, PDF, PDF 3 Users, PDF 5 Users, PDF 9 Users

    Superseded date:  31-12-2021

    Language(s):  English - French

    Published date:  26-09-2007

    Publisher:  International Electrotechnical Committee

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    Table of Contents - (Show below) - (Hide below)

    FOREWORD
    1 Scope
    2 Normative references
    3 Terms and definitions
      3.1 Graphical symbol of IGBT
      3.2 General terms
      3.3 Terms related to ratings and characteristics;
          voltages and currents
      3.4 Terms related to ratings and characteristics;
          other characteristics
    4 Letter symbols
      4.1 General
      4.2 Additional general subscripts
      4.3 List of letter symbols
    5 Essential ratings and characteristics
      5.1 Ratings (limiting values)
      5.2 Characteristics
    6 Measuring methods
      6.1 General
      6.2 Verification of ratings (limiting values)
      6.3 Methods of measurement
    7 Acceptance and reliability
      7.1 General requirements
      7.2 Specific requirements
      7.3 Type tests and routine tests
    Annex A (normative) Measuring method for collector-emitter
                        breakdown voltage
    Annex B (normative) Measuring method for inductive load
                        turn-off current under specified conditions
    Annex C (normative) Forward biased safe operating area (FBSOA)
    Annex D (normative) Case non-rupture
    Bibliography

    Abstract - (Show below) - (Hide below)

    This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).The major changes with respect to the previous edition are mainly of an editorial nature.

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    Committee TC 47/SC 47E
    Development Note To be read in conjunction with IEC 60747-1 (01/2003) Stability Date: 2017. (10/2012)
    Document Type Standard
    Publisher International Electrotechnical Committee
    Status Superseded
    Superseded By
    Supersedes

    Standards Referenced By This Book - (Show below) - (Hide below)

    BS EN 62747:2014 Terminology for voltage-sourced converters (VSC) for high-voltage direct current (HVDC) systems
    CEI EN 60747-15 : 2012 SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES
    I.S. EN 62751-1:2014 POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 1: GENERAL REQUIREMENTS
    NF EN 62751-1 : 2015 POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 1: GENERAL REQUIREMENTS
    EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
    EN 62747:2014/AC:2015 TERMINOLOGY FOR VOLTAGE-SOURCED CONVERTERS (VSC) FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS (IEC 62747:2014)
    I.S. EN 62747:2014-2015-10 TERMINOLOGY FOR VOLTAGE-SOURCED CONVERTERS (VSC) FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS
    DIN IEC/TR 62543 : 2018 HIGH-VOLTAGE DIRECT CURRENT (HVDC) POWER TRANSMISSION USING VOLTAGE SOURCED CONVERTERS (VSC) (IEC/TR 62543:2011 + A1:2013 + A2:2017)
    VDE 0553-543 : 2018 HIGH-VOLTAGE DIRECT CURRENT (HVDC) POWER TRANSMISSION USING VOLTAGE SOURCED CONVERTERS (VSC) (IEC/TR 62543:2011 + A1:2013 + A2:2017)
    01/206102 DC : DRAFT JUL 2001 IEC 60747-8-12 ED.1 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 8-12: 8-12: METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS POWER SWITCHING APPLICATIONS
    07/30162213 DC : 0 BS EN 60747-15 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES
    12/30251416 DC : 0 BS EN 62747 - TERMINOLOGY FOR VOLTAGE-SOURCED CONVERTERS (VSC) FOR HVDC SYSTEMS
    I.S. EN 60747-15:2012 SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES (IEC 60747-15:2010 (EQV))
    BS EN 62751-1:2014 Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems General requirements
    BS EN 60747-15:2012 Semiconductor devices. Discrete devices Isolated power semiconductor devices
    I.S. EN 62751-2:2014 POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 2: MODULAR MULTILEVEL CONVERTERS
    BS PD IEC TR 62543 : 2011 HIGH-VOLTAGE DIRECT CURRENT (HVDC) POWER TRANSMISSION USING VOLTAGE SOURCED CONVERTERS (VSC)
    IEC 60747-8-4:2004 Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
    12/30253588 DC : 0 BS EN 62751-2 - DETERMINATION OF POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HVDC SYSTEMS - PART 2: MODULAR MULTILEVEL CONVERTERS
    04/30114936 DC : DRAFT JUN 2004 EN 50439 - RAILWAY APPLICATIONS - RELIABILITY TESTS FOR HIGH POWER SEMICONDUCTORS DEVICES - PART 1: STANDARD BASE-PLATE MODULES
    BS EN 62751-2:2014 (published 2014-11) Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems Modular multilevel converters
    EN 62751-1:2014 Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 1: General requirements
    EN 62751-2:2014 Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 2: Modular multilevel converters
    IEC 62751-2:2014 Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 2: Modular multilevel converters
    12/30252799 DC : 0 BS EN 62751-1-1 - DETERMINATION OF POWER LOSSES IN VOLTAGE SOURCED CONVERTERS (VSC) FOR HV DC SYSTEMS - PART 1: GENERAL REQUIREMENTS
    IEC 62751-1:2014+AMD1:2018 CSV Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 1: General requirements
    IEC TR 62543:2011+AMD1:2013 CSV High-voltage direct current (HVDC) power transmission using voltage sourced converters (VSC)
    IEC 60747-15:2010 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices

    Standards Referencing This Book - (Show below) - (Hide below)

    IEC 60747-7:2010 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
    IEC 60747-1:2006+AMD1:2010 CSV Semiconductor devices - Part 1: General
    IEC 60747-6:2016 Semiconductor devices - Part 6: Discrete devices - Thyristors
    IEC 60050-521:2002 International Electrotechnical Vocabulary (IEV) - Part 521: Semiconductor devices and integrated circuits
    IEC 60747-2:2016 Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
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