• BS IEC 60747-9:2007

    Superseded A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

    Semiconductor devices. Discrete devices Insulated-gate bipolar transistors (IGBTs)

    Available format(s):  Hardcopy, PDF

    Superseded date:  22-11-2019

    Language(s):  English

    Published date:  30-11-2007

    Publisher:  British Standards Institution

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    Table of Contents - (Show below) - (Hide below)

    1 Scope
    2 Normative references
    3 Terms and definitions
      3.1 Graphical symbol of IGBT
      3.2 General terms
      3.3 Terms related to ratings and characteristics;
          voltages and currents
      3.4 Terms related to ratings and characteristics;
          other characteristics
    4 Letter symbols
      4.1 General
      4.2 Additional general subscripts
      4.3 List of letter symbols
    5 Essential ratings and characteristics
      5.1 Ratings (limiting values)
      5.2 Characteristics
    6 Measuring methods
      6.1 General
      6.2 Verification of ratings (limiting values)
      6.3 Methods of measurement
    7 Acceptance and reliability
      7.1 General requirements
      7.2 Specific requirements
      7.3 Type tests and routine tests
    Annex A (normative) Measuring method for collector-emitter
                        breakdown voltage
    Annex B (normative) Measuring method for inductive load
                        turn-off current under specified conditions
    Annex C (normative) Forward biased safe operating area (FBSOA)
    Annex D (normative) Case non-rupture
    Bibliography

    Abstract - (Show below) - (Hide below)

    Provides product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).

    Scope - (Show below) - (Hide below)

    This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature.

    General Product Information - (Show below) - (Hide below)

    Committee EPL/47
    Development Note Supersedes 93/200600 DC. (01/2003) Supersedes 98/231398 DC. (05/2005) Supersedes 04/30113287 DC. (11/2007)
    Document Type Standard
    Publisher British Standards Institution
    Status Superseded
    Superseded By
    Supersedes

    Standards Referencing This Book - (Show below) - (Hide below)

    IEC 60747-7:2010 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
    IEC 60747-1:2006+AMD1:2010 CSV Semiconductor devices - Part 1: General
    IEC 60747-6:2016 Semiconductor devices - Part 6: Discrete devices - Thyristors
    IEC 60050-521:2002 International Electrotechnical Vocabulary (IEV) - Part 521: Semiconductor devices and integrated circuits
    IEC 60747-2:2016 Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
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