EN 62047-9:2011
Current
The latest, up-to-date edition.
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
19-08-2011
FOREWORD
1 Scope
2 Normative references
3 Measurement methods
Annex A (informative) - Example of bonding force
Annex B (informative) - An example of the fabrication
process for three-point bending
specimens
Bibliography
Annex ZA (normative) - Normative references to international
publications with their corresponding European
publications
IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.
| Committee |
CLC/TC 47X
|
| DocumentType |
Standard
|
| PublisherName |
European Committee for Standards - Electrical
|
| Status |
Current
|
| Standards | Relationship |
| IEC 62047-9:2011 | Identical |
| NEN EN IEC 62047-9 : 2011 | Identical |
| DIN EN 62047-9:2012-03 | Identical |
| NBN EN 62047-9 : 2011 | Identical |
| BS EN 62047-9:2011 | Identical |
| I.S. EN 62047-9:2011 | Identical |
| CEI EN 62047-9 : 2012 | Identical |
| PN EN 62047-9 : 2012 | Identical |
| NF EN 62047-9 : 2012 | Identical |
| UNE-EN 62047-9:2011 | Identical |
| PNE-FprEN 62047-9 | Identical |
| BS EN 62047-15:2015 | Semiconductor devices. Micro-electromechanical devices Test method of bonding strength between PDMS and glass |
| I.S. EN 62047-15:2015 | SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 15: TEST METHOD OF BONDING STRENGTH BETWEEN PDMS AND GLASS |
| CEI EN 62047-15 : 2016 | SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 15: TEST METHOD OF BONDING STRENGTH BETWEEN PDMS AND GLASS |
| EN 62047-15:2015 | Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass |
| IEC 62047-4:2008 | Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS |
| EN ISO 6892-1:2016 | Metallic materials - Tensile testing - Part 1: Method of test at room temperature (ISO 6892-1:2016) |
| ISO 6892-1:2016 | Metallic materials Tensile testing Part 1: Method of test at room temperature |
| IEC 62047-2:2006 | Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials |
| EN 62047-2:2006 | Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials |
| EN 60749-19:2003/A1:2010 | Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength |
| ASTM E 8M : 2004 | Standard Test Methods for Tension Testing of Metallic Materials [Metric] (Withdrawn 2008) |
| IEC 60747-14-1:2010 | Semiconductor devices - Part 14-1: Semiconductor sensors - Generic specification for sensors |
| EN 62047-4:2010 | Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS |
| IEC 60749-19:2003+AMD1:2010 CSV | Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength |
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