MIL S 19500 : J
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
Available format(s)
PDF
Superseded date
23-07-2013
Superseded by
Language(s)
English
Publisher
Important note : Users cannot be edited or removed once added to your Multi user PDF.NO CONTENTS SECTION
Outlines general requirements for semiconductor devices.
| Committee |
FSC 5961
|
| DevelopmentNote |
Supersedes NAS 717. (04/2005)
|
| DocumentType |
Standard
|
| Pages |
172
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
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| SupersededBy | |
| Supersedes |
| MIL-A-28729 Revision B:1970 | ANTENNA COUPLER GROUP, CU-1382(), (HF, BB, WIDE DYNAMIC RANGE) |
| AFGS-87213 Revision B:1993 | DISPLAYS, AIRBORNE, ELECTRONICALLY/OPTICALLY GENERATED |
| MIL S 19500/485 : E | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N5415, TX2N5415, 2N5416 AND TX2N5416 |
| MIL-S-19500-414 Revision B:1983 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N5241, JAN, JANTX & JANTXV |
| MIL-S-63335 Revision C:1985 | SAFETY AND ARMING DEVICE, GUIDED MISSILE: M143 ELECTRICAL PARTS AND ASSEMBLIES FOR |
| MIL-R-29583 Base Document:1992 | RADIO SET |
| MIL-STD-975 Revision M:1994 | NASA STANDARD (EEE) PARTS LIST |
| MIL-S-55234 Base Document:1963 | STANDING WAVE RATIO-POWER METER, ME-165 ( )/G |
| MIL S 19500/518 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N3766, 2N3767 JAN, JANTX, AND JANTXV |
| MIL S 19500/627 : 1994 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6688, 1N6689, 1N6688US, AND 1N6689US, JANTX, JANTXV, AND JANS |
| MIL-S-19500-310 Base Document:1965 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPE 2N2834 |
| JSGS-87231 Revision A:1995 | ENGINES, AIRCRAFT, TURBINE |
| MIL-R-2729 Revision D:1992 | REGULATOR EXCITER SYSTEMS, VOLTAGE, A.C. GENERATOR, NAVAL SHIPBOARD USE |
| MIL P 24765 : 0 | POWER SUPPLY, UNINTERRUPTIBLE, STATIC |
| MIL S 19500/368 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N3439, TX2N3439, 2N3440 AND TX2N3440 |
| MIL-S-19500-200 Revision B:1989 | SEMICONDUCTOR DEVICE, DIODE, GERMANIUM TYPE 1N270 JAN, JANTX, AND JANTXV |
| MIL-I-85071 Revision A:1992 | INVERTERS, AIRCRAFT, DC TO AC, GENERAL SPECIFICATION FOR |
| MIL-HDBK-11991 Base Document:1996 | DESIGN OF ELECTRICAL, ELECTRONIC, AND ELECTRO-MECHANICAL EQUIPMENT, GUIDED MISSILE AND ASSOCIATED WEAPONS SYSTEMS |
| MIL-P-15736-1 Revision D:1987 | POWER SUPPLY, METALLIC RECTIFIER, HELICOPTER STARTING AND SERVICING |
| MIL S 19500/539 : A (1) | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN SILICON, POWER TYPES 2N6300, 2NN6301, JAN, TX AND TXV |
| MIL S 19500/144 : H (1) | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N3064, 1N4454-1, AND 1N4532 JAN, JANTX, AND JANTXV |
| MIL S 19500/589 : 0 | SEMICONDUCTOR DEVICE, INSULATED GATE, BIPOLAR TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7366 & 2N7367, JANTX, JANTXV & JANS |
| MIL-F-24638 Base Document:1984 | FREQUENCY CHANGER, SOLID STATE, AIR COOLED (NAVAL SHIPBOARD) |
| MIL S 19500/435 : D | SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES 1N4099-1, 1N4099C-1, 1N4099D-1 THROUGH 1N4135-1, 1N4135C-1, 1N4135D-1, 1N4614-1, 1N4614C-1, 1N4614D-1 THROUGH 1N4627-1, 1N4627C-1, 1N4627D-1, 1N4099UR-1,1N4099CUR-1, 1N4099DUR-1 THROUGH 1N4135UR-1, 1N4135CUR-1, 1N4135DUR-1, 1N4614UR-1, 1N4614CUR-1, 1N4614DUR-1 THRU 1N4627UR-1, 1N4627CUR-1 |
| MIL S 19500/308 : B | SEMICONDUCTOR DEVICE, DIODE, SILICON POWER RECTIFIER, FAST RECOVERY TX AND NON TX TYPES 1N3909, 1N3910, 1N3911, 1N3912, 1N3913, 1N3909R, 1N3910R, 1N3911R, 1N3912R, AND 1N3912R |
| MIL S 19500/522 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY DEVICE TYPES - JAN 2N6603 & TXV 2N6603, JAN 2N6604 & TXV 2N6604 |
| MIL S 19500/448 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPE 2N4405 JANTX |
| MIL-S-19500-66 Revision B:1968 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPE 2N422 |
| MIL S 19500/566 : A (3) | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON LOGIC-LEVEL, TYPES 2N6902 AND 2N6904, JANTX, JANTXV AND JANS |
| MIL S 19500/406 : C | SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N4460 THRU 1N4496 AND 1N6485 THRU 1N6491 JAN, JANTX, JANTXV AND JANS |
| MIL-C-87974 Base Document:1985 | COUNTER, ELECTRONIC, DIGITAL READOUT 26.5 GIGAHERTZ (GHZ) CONTINUOUS WAVE (CW) |
| MIL S 19500/496 : A | SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, PNP, SILICON TYPES 2N5795, 2N5796, AND 2N5796U, JANTX AND JANTXV |
| MIL S 19500/356 : D | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N4954 THROUGH 1N4996, 1N5968 AND 1N5969 JAN, JANTX, JANTXV AND JANS |
| MIL-STD-989 Base Document:1991 | CERTIFICATION REQUIREMENTS FOR JAN SEMICONDUCTOR DEVICES |
| MIL S 19500/559 : B | SEMICONDUCTOR DEVICE, NPN, SILICON, SWITCHING, FOUR TRANSISTOR, ARRAY TYPE M19500/559-01, -02, JAN, JANTX AND JANTXV |
| MIL-STD-1546 Revision B:1992 | PARTS, MATERIALS, AND PROCESSES CONTROL PROGRAM FOR SPACE AND LAUNCH VEHICLES |
| MIL-S-19500-155 Revision E:1974 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENERAL PURPOSE TYPES 1N3189, 1N3190, 1N3191, TX AND NON-TX TYPES |
| MIL S 19500/415 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE JAN2N2812, JANTX2N2812, JAN2N2814, JANTX2N2814 |
| MIL S 19500/543 : D (1) | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768, 2N6770, JANTX, JANTXV AND JANS |
| MIL S 19500/265 : LATEST | TRANSISTOR,NPN,SILICON PWR TYPE 2N1506A |
| MIL-S-19500-163 Base Document:1961 | SEMICONDUCTOR DEVICE TRANSISTOR, NPN, SILICON TYPE 2N1072 |
| MIL S 19500/116 : J | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N914, 1N4148-1 AND 1N4531 JANTX, JANTXV AND JANS |
| MIL S 19500/605 : (1) | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, & 2N7298 JANTXVM, D, R, H & JANSM, D & R |
| MIL S 81746 : 0 | SERVTORQ, GENERAL SPECIFICATION FOR |
| MIL-S-19500-230 Revision C:1965 | SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207 |
| MIL S 19500/581 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER, TYPES JANTX AND JANTXV 2N4237, 2N4238 AND 2N4239 |
| MIL S 19500/391 : C (2) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N3019, 2N3019S, 2N3057A & 2N3700 JANTX, JANTXV, AND JANS |
| MIL-S-19500-91 Base Document:1959 | SEMICONDUCTOR DEVICE DIODE SILICON, POWER RECTIFIER TYPE 1N2153 |
| MIL S 19500/538 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6676, 2N6678, 2N6691 AND 2N6693 JAN, JANTX AND JANTXV |
| MIL S 19500/542 : E | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6758, 2N6760, 2N6762, JANTX, JANTXV AND JANS |
| MIL S 19500/297 : B | SEMICONDUCTOR DEVICE, DIODE, SILICON POWER RECTIFIER TX AND NON TX TYPES 1N1184, 1N1186, 1N1188, 1N1190, 1N3766, 1N3768, 1N1184R, 1N1186R, 1N1188R, 1N1190R, 1N3766R, AND 1N3768R |
| MIL-A-25546 Revision C:1970 | Amplifier, Audio Frequency AM-944/AIC-13 |
| MIL D 87213 : 0 | DISPLAYS/OPTICALLY GENERATED REQUEST FOR ISSUE OTHER THAN DOD MUST BE SENT VIA; ASD/ENES, WRIGHT-PATTERSON AFB OH 45433-6503 |
| PREN 3662-005 : 200P3 | AEROSPACE SERIES - CIRCUIT BREAKERS, THREE-POLE, TEMPERATURE COMPENSATED, RATED CURRENT 20 A TO 50 A - PART 005: WITH POLARIZED SIGNAL CONTACT - PRODUCT STANDARD |
| PREN 3662-006 : 200P3 | AEROSPACE SERIES - CIRCUIT BREAKERS, THREE-POLE, TEMPERATURE COMPENSATED, RATED CURRENT 20 A TO 50 A - PART 006: WITH POLARIZED SIGNAL CONTACT - BUS-BAR VERSION - PRODUCT STANDARD |
| PREN 3661-005 : 200P3 | AEROSPACE SERIES - CIRCUIT BREAKERS, SINGLE-POLE, - TEMPERATURE COMPENSATED, RATED CURRENT 20 A TO 50 A - PART 005: WITH POLARIZED SIGNAL CONTACT - PRODUCT STANDARD |
| PREN 3661-006 : 200P1 | AEROSPACE SERIES - CIRCUIT BREAKERS, SINGLE-POLE, TEMPERATURE COMPENSATED, RATED CURRENT 20 A TO 50 A - PART 006: WITH POLARIZED SIGNAL CONTACT - BUS BAR VERSION - PRODUCT STANDARD |
| BS EN 3662-006:2006 | Aerospace series. Circuit breakers, three-pole, temperature compensated, rated current 20 A to 50 A With polarized signal contact. Bus-bar version. Product standard |
| MIL S 19500/162 : B | SEMICONDUCTOR DEVICES, DIODE, SILICON, POWER RECTIFIER JAN TYPES 1N1614, 1N1615, 1N1616, 1N4458, 1N4459, 1N1614R, 1N1615R, 1N1616R, 1N4458R, 1N4459R |
| MIL S 19500/540 : A | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER TYPES 2N6298, 2N6299, JAN, TX AND TXV |
| MIL S 19500/602 : A | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7265, 2N7266 & 2N7267 JANTXVM, D, R, H & JANSM, D, R, H |
| MIL-C-85521 Base Document:1983 | Concentrator, Oxygen, GGU-7/A |
| MIL-HDBK-217 Revision F:1991 | RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT |
| MIL C 2212 : G | CONTROLLER, ELECTRIC MOTOR AC OR DC AND ASSOCIATED SWITCHING DEVICES |
| MIL-R-81876 Revision B:1988 | RECEIVER, TRANSMITTER RADIO SET AN/APX-100(V) |
| MIL S 19500/474 : D | SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS, TYPES 1N5768, 1N5772, 1N5774, 1N6100, 1N6101, IN6496, 1N6506, 1N6507, 1N6508, 1N6509, 1N6510, 1N6511, JAN, JANTX, JANTXV AND JANS |
| MIL-R-55499 Revision B:1974 | RADIO SET AN/PRC-77 ( ) ( UNITS OF) |
| MIL A 28875 : 0 | AMPLIFIER, RADIO FREQUENCY AND MICROWAVE, SOLID STATE, GENERAL SPECIFICATION FOR |
| MIL-STD-1389 Revision D:1989 | DESIGN REQUIREMENTS FOR STANDARD ELECTRONIC MODULES |
| MIL-E-48630 Base Document:1986 | ELECTRONIC ASSEMBLY, FOR MINES, M718A1/M741A1, SYSTEM |
| MIL S 19500/516 : B | SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6102 - IN 6137, 1N6102A - 1N6137A, 1N6138 - 1N6173, 1N6138A - 1N6173A |
| MIL S 19500/413 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N3771 AND 2N3772, JAN, JANTX, AND JANTXV |
| MIL S 19500/266 : LATEST | SEMICONDUCTOR DEVICE,DIODE,SILICON,PWR RCTFR FAST |
| MIL S 19500/609 : A (1) | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING |
| MIL S 19500/337 : F | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N4153, 1N4153-1, AND 1N4534, JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/407 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N3055 AND TX2N3055 |
| MIL S 19500/375 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3822, 2N3823 JANTX, JANTXV AND JANS |
| MIL S 19500/296 : B | SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL SILICON TYPES 2N2609 JAN |
| MIL S 19500/564 : D | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6849 AND 2N6851, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL S 19500/158 : K | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N3154 THROUGH 1N3157, -1 JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/315 : E | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N2880, 2N3749, JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/276 : B | SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS), SILICON TYPES 2N2323, 2N2324, 2N2326, 2N2328, 2N2329 AND S VERSIONS 2N2323A, 2N2324A, 2N2326A, 2N2328A, AND S VERSIONS JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/420 : D | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, GENERAL PURPOSE TYPES 1N5550 TO N5554 JAN, JANTX, JANTXV, AND JANS |
| MIL-S-19500-71 Revision D:1967 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N1195 |
| MIL S 19500/275 : LATEST | SEMICONDUCTOR DEVICE DIODE, SILICON SWITCHING TYPE 1N4087 |
| MIL-E-63399 Revision B:1981 | ELECTRONICS-MCD ASSEMBLY FOR MINE, ANTITANK: HE, M75 |
| MIL-S-19500-135 Revision A:1968 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPE 2N695 |
| MIL S 19500/261 : LATEST | SEMICONDUCTOR DEVICE TRANSISTOR PNP GERMANIUM POWER TYPE 2N2210 |
| MIL-G-21410 Revision A:1991 | GOVERNING SYSTEMS, SPEED AND LOAD-SENSING NAVAL SHIPBOARD USE |
| MIL S 19500/464 : B (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER TYPES 2N5685 AND 2N5685 AND 2N5686, JANTX AND JANTXV |
| MIL S 19500/132 : A | SEMICONDUCTOR DEVICE DIODE,SILICON SWITCHING TYPE 1N691 |
| MIL-S-19500-128 Revision A:1965 | SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER TYPES JAN-1N26B, JAN-1N26BR, JAN-1N26BM, AND JAN-1N26BMR |
| MIL S 15103 : F | SALINITY INDICATING EQUIPMENT |
| MIL S 19500/576 : A (2) | SEMICONDUCTOR DEVICE, DIODE, SILICONE, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, TYPES 1N6520 THROUGH 1N6527, 1N6520US THROUGH 1N6527US JANTX, JANTXV, AND JANS |
| MIL S 19500/177 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP SILICON LOW POWER TYPES 2N1131 AND 2N1132 |
| TR NWT 000468 : ISSUE 1 | RELIABILITY ASSURANCE PRACTICES FOR OPTOELECTRONIC DEVICES IN CENTRAL OFFICE APPLICATIONS |
| MIL S 19500/621 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER TYPE 2N7369 JANTX, JANTXV & JANS |
| MIL S 19500/181 : E (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON LOW POWER TYPES 2N718A,2N1613, AND 2N1613L JAN JANTX AND JANTXV |
| MIL S 19500/359 : D | SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, 1N4942, 1N4944, 1N4946, 1N4947, AND 1N4948 JAN, JANTX, AND JANTXV |
| MIL-S-19500-517 Base Document:1977 | SEMICONDUCTOR DEVICE, SILICON, DIODE ARRAY, TYPE 1N6101 JAN, JANTX, AND JANTXV |
| MIL-S-19500-136 Revision A:1969 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, GERMANIUM, LOW POWER TYPE 2N1310 |
| MIL S 19500/444 : C (1) | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPE 1N5711 JAN, JANTX, JANTXV, AND JANS. |
| MIL S 19500/606 : 1992 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7291, 2N7293, 2N7295 & 2N7297 JANTXVM, D, R & JANSM, D & R |
| MIL S 19500/235 : LATEST | SEMICONDUCTOR DEVICE DIODE SILICON TYPE JAN-1N26 |
| MIL S 19500/304 : C | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY TYPES 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, AND 1N3893R JAN JANTX JANTXV AND JANS |
| MIL-S-19500-178 Revision B:1964 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPE 2N1165 |
| MIL-S-19500-493 Revision A:1990 | SEMICONDUCTOR DEVICE, PNPN, THYRISTOR, SILICON, (PROGRAMMABLE UNIJUNCTION TRANSISTOR), TYPES: 2N6116, 2N6117, 2N6118, 2N6137, 2N6138, JAN, JANTX, AND JANTXV |
| MIL-S-19500-217 Revision B:1972 | SEMICONDUCTOR DEVICE, TRANSISTORS, PNP, GERMANIUM, HIGH-POWER TYPES 2N456B, 2N457B, 2N458B, 2N1021A, 2N1022A |
| MIL S 19500/114 : E | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR B AND RB TYPES, 1N2804 THRU 1N2811, 1N2813, 1N2816, 1N2818 THRU 1N2820, 1N2822 THRU 1N2827, 1N2829, 1N2831 THRU 1N2838, 1N2840 THRU 1N2846 |
| MIL S 19500/270 : E | SEMICONDUCTOR DEVICE, UNITIZED, DUAL TRANSISTOR NPN SILICON TYPES 2N2060 AND 2N2060L JAN ANTX JANTXV AND JANS |
| MIL S 19500/557 : E | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6798, 2N6800 AND 2N6802, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL S 19500/260 : D | SEMICONDUCTOR DEVICE, DIODE, SILICON POWER RECTIFIER |
| MIL-S-19500-183 Revision A:1965 | SEMICONDUCTOR DEVICE, DIODE, SILICON RF MIXER TYPE JAN-1N25WA |
| MIL-STD-701 Revision P:1992 | LISTS OF STANDARD SEMICONDUCTOR DEVICES |
| MIL S 19500/357 : D (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER TYPES 2N3634 TO 2N3637, 2N3634L TO 2N3637L JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/225 : E | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON TYPES 2N1711, TX2N1711, 2N1890 AND TX 2N1890 |
| MIL-S-19500-63 Revision D:1972 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, GERMANIUM, LOW POWER TYPE 2N358A |
| MIL-S-19500-584 Base Document:1990 | SEMICONDUCTOR DEVICE, RF POWER TRANSISTOR, NPN, SILICON, PUSH-PULL TYPES JANTX, JANTXV, AND JANS 2N6985 AND 2N6986 |
| MIL S 19500/355 : D (1) | SEMICONDUCTOR DEVICE, UNITIZED DUAL-TRANSISTORS, NPN, SILICON TYPES 2N2919, 2N2919L, 2N2920 AND 2N2920L JAN, JANTX, JANTXV AND JANS |
| MIL-S-19500-141 Revision A:1966 | SEMICONDUCTOR DEVICE, DIODE, TYPE 1N697 (NAVY) |
| MIL S 19500/384 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON HIGH-POWER TYPES 2N3584, 2N3585, JANTX AND JANTXV |
| MIL STD 1836 : NOTICE 1 | STANDARDIZATION & CONTROL PROGRAM FOR PARTS, MATERIALS & PROCESSES USED IN INTERCONTINENTAL BALLISTIC MISSILE WEAPON SYSTEMS |
| MIL S 19500/231 : F | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N3600, 1N4150 TX1N3600 AND TX1N4150 |
| MIL-A-81258 Base Document:1965 | AMPLIFIER, RESOLVER, GENERAL SPECIFICATION FOR |
| MIL S 19500/608 : 0 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE OR COMMON ANODE CENTER TAP, TYPES 1M6660 & 1N6660R JANTX, JANTXV & JANS |
| MIL S 19500/509 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER TYPES 2N6338 & 2N6341, JAN, JANTX, & JANTXV |
| MIL S 19500/527 : A | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER TYPES 2N6648, 2N6649 AND 2N6650 NON-TX, TX, AND TXV |
| MIL S 19500/313 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER TYPES 2N2432, TX2N2432, 2N2432A AND TX2N2432A |
| MIL-G-15788 Revision B:1964 | GENERATOR SET, DIESEL ENGINE, 60KW, 450 VOLT AC, 60 CYCLE, 1800 R.P.M. |
| MIL-M-81850 Revision A:1974 | MAGNETIC TAPE TRANSPORT RD-319/AYA-8 |
| MIL-F-24713 Base Document:1989 | FREQUENCY CHANGER, STATIC, AIR COOLED (NAVAL SHIPBOARD) |
| MIL-S-19500-62 Revision B:1968 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N501A |
| MIL S 19500/551 : B (1) | SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468 AND 1N6461US THROUGH 1N6468US JAN, JANTX, JANTXV, JANHC AND JANKC |
| MIL S 19500/580 : LATEST | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER, TYPES JANTX AND JANTXV, 2N4234, 2N4235 AND 2N4236 |
| MIL-P-83927 Revision B:1981 | Power Supplies, Guided Missile Launchers, Single Types PP-2401B/A PP-2401C/A PP-2401D/A, PP-4285/A, PP-4286/A, and Composite Type PP-4506/A and PS-1037 |
| MIL S 19500/615 : 0 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383 JANTXV M, D AND R AND R |
| MIL S 19500/590 : (1) | SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, HIGH VOLTAGE, POWER RECTIFIER, 1N6626 THROUGH 1N6631 AND U SUFFIX VERSIONS JANTX, JANTXV AND JANS |
| MIL S 19500/396 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON SWITCHING TYPES 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, & 2N3765 JAN, JANTX, JANTXV, & JANS |
| MIL-S-19500-170 Revision A:1969 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPE 2N1499A |
| MIL S 19500/21 : LATEST | SEMICONDUCTOR DEVICE, TRANSISTOR TYPE 2N431 |
| MIL S 19500/404 : B | SEMICONDUCTOR DEVICE, SILICON, HIGH-VOLTAGE RECTIFIER MODULE TYPES 1N5597, 1N5600 AND 1N5603 |
| MIL S 19500/514 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6274 AND 2N6277, JANTX AND JANTXV |
| MIL G 24197 : NOTICE 2 | GENERATOR SET, DIESEL ENGINE 25O KW, ALTERNATING CURRENT |
| PREN 2996-005 : 200P3 | AEROSPACE SERIES - CIRCUIT BREAKERS, THREE-POLE, TEMPERATURE COMPENSATED, RATED CURRENT 1 A TO 25 A - PART 005: WITH POLARIZED SIGNAL CONTACT - PRODUCT STANDARD |
| MIL S 19500/198 : A | SEMICONDUCTOR DEVICE, THYRISTOR TYPE 2N1870A, 2N1871A, 2N1872A, AND 2N1874A |
| MIL S 19500/500 : B (2) | SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629A THROUGH 1N5665A JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/550 : A | SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY HIGH CURRENT TYPES 1N6304, 1N6305, 1N6305, IN6306 AND -R TYPES JAN, JANTX, JANTXV |
| MIL-C-24105 Revision D:1995 | CONVERTERS, SYNCHRO SIGNAL (PANEL MOUNTED) GENERAL SPECIFICATION FOR |
| MIL S 19500/525 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER TYPES 2N6546, TX2N6546, TXV2N6546; 2N6547, TX2N6547, TXV2N6547 |
| MIL S 19500/594 : (2) | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THRU 1N6666 AND 1N6664 THRU 1N6666R JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/561 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPE JAN, JANTX AND JANTXV 2N6193 |
| MIL-L-23886 Revision C:1994 | LIQUID LEVEL INDICATING EQUIPMENT (ELECTRICAL) (NAVAL SHIPBOARD USE) |
| MIL S 19500/583 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER, TYPES JANTX AND JANTXV, 2N5681 AND 2N5682 |
| MIL S 19500/228 : G | SEMICONDUCTOR DEVICE, DIODE, SILICON RECTIFIER TYPES TX AND NON TX 1N3611 1N3612, 1N3613, 1N3614 AND 1N3957 |
| MIL S 19500/263 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1714, 2N1714S, 2N1715, 2N1715S, 2N1716, 2N1716S, 2N1717, AND 2N1717S |
| MIL-T-81148 Revision B:1972 | TRANSFORMER, DISCRIMINATOR (FOR TORPEDO MARK 37 MODS O, 2, AND 3) |
| MIL-S-19500-459 Revision A:1973 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER TYPES 2N5967 AND 2N5969 NON-TX, TX, TXV |
| MIL-S-19500-58 Revision D:1966 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N665 |
| MIL S 19500/501 : B | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER TYPES 2N6051, 2N6052 JAN, JANTX AND JANTXV |
| MIL S 19500/565 : A | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6895, 2N6896, 2N6897, AND 2N6898 JANTX, JANTXV AND JANS |
| MIL S 19500/582 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER, TYPES JANTX AND JANTXV, 2N5679, 2N5680 |
| DOD-L-24681 Base Document:1987 | LOUDSPEAKER, CONTROL OF VOLUME, AUTOMATIC (METRIC) |
| MIL S 19500/376 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER TYPE 2N2484 JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/421 : D | SEMICONDUCTOR DEVICE, UNITIZED, DUAL TRANSISTOR, NPN/PNP, COMPLEMENTARY, SILICON TYPES 2N3838 AND 2N4854, JAN, JANTX AND JANTXV |
| MIL S 19500/454 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N5660, 2N5661, 2N5662 AND 2N5663 JAN, JANTX AND JANTXV |
| MIL S 19500/408 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N3715 & 2N3716 JANTX, JANTXV & JANS |
| MIL S 19500/556 : E (1) | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6782, 2N6784 AND 2N6786, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL S 19500/623 : 0 | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, HIGH-POWER TYPE 2N7371 JANTX, JANTXV & JANS |
| MIL S 19500/366 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER TYPES 2N3498, 2N3498L, 2N3499, 2N3499L, 2N3500, 2N3500L, 2N3501 AND 2N3501L, JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/301 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON LOW POWER TYPE 2N918 JANS, JANTX AND JANTXV |
| MIL S 19500/512 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N4029 AND 2N4033 JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/220 : LATEST | TRANSISTOR,PNP,GERMANIUM,VHF TYPE 2N1940 |
| MIL S 19500/320 : LATEST | SEMICONDUCTOR DEVICE, DIODE, SILICON , VOLTAGE-REFERENCE TYPE 1N1530A |
| MIL S 19500/585 : 0 | SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, HIGH VOLTAGE, POWER RECTIFIER, 1N6620 THROUGH 1N6625 AND U SUFFIX VERSIONS, JANTX, JANTXV AND JANS |
| MIL S 19500/311 : LATEST | SEMICONDUCTOR DEVICE TRANSISTOR, NPN, SILICON, TYPE 2N720A |
| MIL S 19500/443 : A | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING 1N5719 AND TX 1N5719 |
| MIL-S-19500-432 Base Document:1970 | SEMICONDUCTOR DEVICE, DIODE, SILICON JAN1N5624 TO JAN1N5627, JANTX1N5624 TO JANTX1N5627 |
| MIL S 19500/423 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPES, 2N5581 AND 2N5582, JANTX |
| MIL-S-19500-138 Revision C:1970 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPE 2N1118 |
| MIL-S-19500-191 Revision A:1964 | SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, MIXER TYPE 1N263 |
| MIL-S-19500-133 Revision A:1970 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP GERANIUM TYPE 2N1411 |
| MIL S 19500/587 : 0 | SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N6661, 1N6662, 1N6663, 1N6661US, 1N6662US, 1N6663US, JANTX, JANTXV, JANS |
| MIL S 19500/622 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7368 JANTX, JANTXV & JANS |
| MIL S 19500/607 : (1) | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL & P-CHANNEL, SILICON |
| MIL S 19500/245 : LATEST | SEMICONDUCTOR DEVICE TRANSISTOR NPN GERMANIUM TYPE 2N2426M |
| MIL-S-19500-215 Base Document:1961 | SEMICONDUCTOR DEVICE, TRANSISTOR, TYPES 2N1173 AND 2N1174 (NAVY) |
| MIL-S-19500-119 Revision B:1963 | SEMICONDUCTOR DEVICE DIODE GERMANIUM, TYPE JAN 1N933 |
| MIL S 19500/224 : LATEST | TRANSISTOR,NPN,SILICON,SWITCH TYPE 2N851,2N852 |
| MIL-S-19500-1 Revision A:1967 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N220 |
| MIL S 19500/309 : 0 | SEMICONDUCTOR DEVICE TRANSISTOR, PNP GERMANIUM, TYPE 2N2528 |
| MIL S 19500/299 : LATEST | SEMICONDUCTOR DEVICE, DIODE, TYPE 1N429 |
| MIL E 917 : E | ELECTRIC POWER EQUIPMENT, BASIC REQUIREMENTS (NAVAL SHIPBOARD USE) |
| MIL-S-19500-179 Revision A:1972 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPE 2N1234 |
| MIL-S-19500-361 Base Document:1966 | TRANSISTOR, PNP, SILICON, DOUBLE-EMITTER TYPE 3N108 |
| MIL-S-19500-571 Revision A:1993 | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, MOS, N-CHANNEL, SILICON TYPES 2N7104, 2N7105, 2N7108, 2N7109, JANTX, JANTXV & JANS |
| MIL S 19500/515 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON POWER TYPES 2N6378,TX2N6378, RXV2N6378, 2N6379, TX2N6379, TXV2N6379 |
| MIL S 19500/624 : 0 | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7370 JANTX, JANTXV & JANS |
| MIL S 19500/6 : B (2) | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N43A AND 2N44A |
| MIL S 19500/234 : LATEST | SEMICONDUCTOR DEVICE DIODE SILICON TYPE JAN 1N25 |
| MIL S 19500/600 : A | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7229 AND 2N7230 JANTX, JANTXV, JANS, JANHC AND JANKC |
| MIL S 19500/37 : E | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N333, 2N335, 2N336, 2N333A, 2N335A, 2N336A, 2N333T2, 2N335T2, 2N336T2, 2N333LT2, 2N335LT2, 2N336LT2, 2N333AT2, 2N335AT2, 2N336AT2, 2N333ALT2, 2N335ALT2, AND 2N336ALT2, JAN |
| MIL-S-19500-458 Revision A:1973 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER TYPES 2N6061, 2N6063, NON-TX, TX, AND TXV |
| MIL S 19500/253 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER, TYPES 2N929 TX2N929, 2N930, AND TX2N930 |
| MIL S 19500/294 : A | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPE 2N2607 |
| MIL S 19500/255 : H (1) | SEMICONDUCTOR DEVICE, TRANSISTOR NPN, SILICON, SWITCHING, TYPES 2N2221A, 2N2222A, 2N2221AUA, 2N2222AUA, 2N2221AUB, AND 2N2222AUB, JAN, JANTX, JANTXV, JANTXVD, JANTXVH, JANTXVM, JANTXVR, JANS, JANSD, JANSH, JANSM, JANSR, JANHC, AND JANKC |
| MIL-S-19500-321 Revision A:1967 | SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER TYPES 1N21WG, 1N21WGM, 1N21WGMR |
| MIL S 19500/264 : LATEST | SEMICONDUCTOR DIODE,NPN,SILICON,PHOTO,POLAR-SYM |
| MIL S 19500/383 : A | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE VARIABLE CAPACITOR TYPES 1N5139 TO 1N5148A AND TX1N5139A TO TX1N5148A |
| MIL S 19500/463 : D | SEMICONDUCTOR DEVICE, DIODE, SILICON, CURRENT REGULATOR, TYPES 1N5283 THROUGH 1N5314 JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/476 : 0 | SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N5114 TO 2N5116 AND TX2N5114 TO TX2N5116 |
| MIL S 19500/578 : B (2) | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N6638, 1N6642, 1N6643, 1N6638U, 1N6642U, 1N6643U AND 1N4148-1 JANTX, JANTXV AND JANS |
| MIL S 19500/127 : M | SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N4370A THROUGH 1N4372A, 1N746A, THROUGH 1N759A, 1N4370A-1 THROUGH 1N4372A-1, 1N746A-1 THROUGH 1N759A-1, JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/472 : A | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER TYPES 2N6350, 2N6351, 2N6352, 2N6353, JAN, JANTX, JANTXTV |
| MIL S 19500/214 : LATEST | TRANSISTOR,TYPE 2N528 |
| MIL S 19500/343 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPE 2N2857 JAN, JANTX, JANTXV, AND JANS |
| MIL-I-19028 Revision E:1971 | INVERTER (FOR TORPEDO MARK 37 MODS O, O)M(, 1, 2, AND 3) |
| MIL S 19500/504 : B | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER TYPES 2N6283, 2N6284, NON-TX, TX AND TXV |
| MIL S 19500/567 : 0 | SEMICONDUCTOR DEVICE, DIODE SILICON SCHOTTKY BARRIER, FAST RECOVERY TYPE 1N6492 JANTX, JANTXV AND JANS |
| MIL S 19500/292 : A | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPE 2N2606 |
| MIL S 19500/84 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON SWITCHING TYPE 2N545 |
| MIL S 19500/544 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N5152, 2N5154, JAN, JANTX AND JANTXV |
| MIL S 19500/374 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N3996 TO 2N3999, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC |
| MIL S 19500/118 : D | SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES (TX AND NON-TX) |
| DOD-E-8983 Revision C:1977 | ELECTRONIC EQUIPMENT, AEROSPACE, EXTENDED SPACE ENVIRONMENT, GENERAL SPECIFICATION FOR |
| MIL S 19500/246 : F | SEMICONDUCTOR DEVICE, DIODE, SILICON POWER RECTIFIER TYPES 1N3289 1N3291 1N3293, 1N3294, 1N3295 AND R TYPES JAN JANTX JANTXV |
| MIL S 19500/433 : D (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER TYPES 2N4399, 2N5745, JAN JANTX, JANTXV, AND JANS |
| MIL-STD-1547 Revision B:1992 | ELECTRONIC PARTS, MATERIALS, AND PROCESSES FOR SPACE VEHICLES |
| MIL S 19500/120 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LOW-POWER TYPE 2N706 |
| MIL-C-18438 Revision B:1962 | Chargers, Battery, Generator Type |
| MIL R 28750 : C SUPP 1 | RELAYS, SOLID STATE, SEALED, OPTICALLY ISOLATED, ZERO VOLTAGE TURN ON, 25 AMPERES, 250 VOLTS MAXIMUM, 45-440 HZ, POWER SWITCHING |
| MIL-P-24212 Revision C:1991 | PRESSURE TRANSDUCER EQUIPMENT (ELECTRICAL) |
| MIL S 19500/336 : C (1) | SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, PNP, SILICON TYPES 2N3810 AND 2N3811 JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/379 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH POWER TYPES 2N3791, AND 2N3792, JAN, JANTX, JANTXV AND JANS |
| MIL-P-83763 Base Document:1969 | POWER SUPPLY, TRANSISTORIZED |
| MIL S 19500/441 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER TYPES 2N3740, 2N3741, JAN, JANTX, AND JANTXV |
| MIL S 19500/610 : B | SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 & 1N6677UR-1 JANTX, JANTXV & JANC |
| MIL S 19500/168 : C NOTICE 1 | SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS), SILICON TYPES 2N1771A,2N1772A,2N1774A,2N1776A,2N1777A,TX2N1771A, TX2N1772A,TX2N1774A,TX2N1776A,TX2N1777A |
| MIL S 19500/427 : E | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/428 : B | SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPE 2N4416A JAN, JANTX, JANTXV, AND JANS |
| MIL-HDBK-280 Base Document:1985 | NEUTRON HARDNESS ASSURANCE GUIDELINES FOR SEMICONDUCTOR DEVICES AND MICROCIRCUITS |
| MIL S 19500/439 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N5038 & 2N5039 JAN, JANTX, JANTXV, JANS, JANHC, JANKC |
| MIL D 83532 : A (3) SUPP 1 | DELAY LINES, ACTIVE |
| MIL S 19500/456 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPES 2N5302, 2N5303, JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/445 : C | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N5712 JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/598 : 0 | SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR |
| MIL S 19500/554 : (3) | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6392, JAN, JAN TX, JANTXV |
| MIL S 19500/511 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPE 2N4261 JAN, JANTX, JANTXV AND JANS |
| MIL-S-19500-219 Revision A:1963 | TRANSISTOR, PNP, GERMANIUM, POWER, SWITCHING, TYPES 2N1651, 2N1652, 2N1653 |
| MIL S 19500/526 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER TYPES 2N3879 JAN, JANTX, AND JANTXV |
| MIL S 19500/528 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6032 AND 2N6033 NON-TX, TX AND TXV |
| MIL-T-55659 Base Document:1971 | TEST FACILITIES KIT, MK-994()/AR (UNITS OF) |
| MIL-T-62063 Base Document:1967 | TIME DELAY UNIT, ADJUSTABLE, SOLID STATE |
| MIL-S-19500-322 Revision B:1974 | SEMICONDUCTOR DEVICE, DIODE, SILICON MIXER TYPES: IN23WE, IN23WEM, IN23WEMR, IN23WG, IN23WGM, AND 1N23WGMR |
| MIL-E-85082 Revision A:1992 | ENCODERS, SHAFT ANGLE TO DIGITAL, GENERAL SPECIFICATION FOR |
| MIL S 19500/507 : B | SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES, 1N6036A-1N6072A, JAN, JANTX, JANTXV AND JANS |
| MIL-S-19500-513 Base Document:1976 | SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS) SILICON TYPES: 2N6605, 2N6606, 2N6607, 2N6608, NON-TX, TX AND TXV |
| MIL S 19500/430 : A | SEMICONDUCTOR DEVICE, UNITIZED, DUAL-FIELD-EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES TX AND NON-TX 2N5545, 2N5546, AND 2N5547 |
| MIL S 19500/238 : LATEST | SEMICONDUCTOR DEVICE DIODE SILICON TYPE JAN 1N53 |
| MIL-S-19500-373 Revision A:1972 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPES 2N914 AND TX2N914 |
| MIL-S-19500-218 Revision A:1966 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N757A, 2N759A AND 2N760A |
| MIL-S-19500-277 Revision D:1991 | SEMICONDUCTOR DEVICE,TRANSISTOR, NPN, SILICON POWER TYPES 2N2150, AND 2N2151 JANTX |
| MIL S 19500/221 : LATEST | SEMICONDUCTOR TRANSISTOR,PNP,GERMANIUM SWITCH TYPE |
| MIL S 19500/209 : LATEST | SEMICONDUCTOR DEVICE, DIODE, SILICON POWER RECTIFIER TYPES 1N2172 1N2173, 1N2174, 2N1682 |
| MIL S 19500/575 : A (2) | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE IN6512 THROUGH IN6519 IN6512U THROUGH IN6519U JANTX, JANTXV, AND JANS |
| MIL-S-19500-203 Revision C:1970 | SEMICONDUCTOR DEVICE, THYRISTORS, (CONTROLLED RECTIFIERS) SILICON TYPES 2N2024, 2N2025, 2N2027, 2N2029, 2N2030 |
| MIL S 19500/108 : E | SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS), SILICON TYPES 2N682, 2N683, 2N685 THROUGH 2N692, 2N5206, TX2N682, TX2N683, TX2N685 THROUGH TX2N692 AND TX2N5206 |
| MIL S 19500/199 : A | SEMICONDUCTOR DEVICE, DIODE, SILICON, FORWARD-VOLTAGE REGULATOR TYPE 1N816 |
| MIL S 19500/312 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPE 2N708, JANTX |
| MIL S 19500/455 : B (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING TYPES 2N5664, 2N5665, 2N5666 AND 2N5667 JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/596 : C | SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, 2N7222U, JAN, JANTX, JANS, JANHC, AND JANKC |
| MIL S 19500/562 : B | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6804, 2N6806, JANTX, JANTXV AND JANS |
| MIL-S-19500-171 Revision B:1968 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPE 2N1853 |
| MIL S 19500/394 : B (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING, TYPES 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, 2N5238S, JAN, JANTX, JAMTXV, AND JANS |
| MIL-S-19500-232 Revision B:1970 | SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER TYPES 1N21WE,1N21WEM, 1N21WEMR |
| MIL S 19500/519 : A | SEMICONDUCTOR DEVICES, DIODE, LIGHT EMITTING, RED TYPES, CLEAR LENS AND PANEL MOUNT ASSEMBLY TYPES |
| PREN 4838-005 : DRAFT 2016 | AEROSPACE SERIES - ARC FAULT CIRCUIT BREAKERS, SINGLE-POLE, TEMPERATURE COMPENSATED, RATED CURRENT 3 A TO 25 A 115 V A.C. 400 HZ CONSTANT FREQUENCY - PART 005: WITH POLARIZED SIGNAL CONTACT - PRODUCT STANDARD |
| BS EN 3661-006:2006 | Aerospace series. Circuit breakers, single-pole, temperature compensated, rated current 20 A to 50 A With polarized signal contact. Bus bar version. Product standard |
| MIL S 19500/478 : F | SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER TYPES 1N5812, 1N5814, 1N5816 AND TYPES JAN, JANTX AND JANTXV |
| MIL S 19500/397 : D (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPES 2N3743, 2N4930, 2N4931 JANTX, AND JANTXV |
| MIL S 19500/291 : E | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES N2N906A, 2N2907A, 2N2906AUA 2N2907AUA, 2N2906AUB, AND 2N2907AUB, JAN, JANTX, JANTXV, JANS, JANHC, JANKC |
| MIL-S-19500-579 Base Document:1989 | SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT DMOS, QUAD N-CHANNEL TYPES 2N7116, 2N7117, AND 2N7118, JANTX, JANTXV, AND JANS |
| MIL S 19500/446 : A | SEMICONDUCTOR DEVICE, SILICON, HIGH POWER, SINGLE PHASE, FULL WAVE BRIDGE RECTIFIER TYPES SPA25, SPB25, AND SPD25 |
| MIL S 19500/124 : G (1) | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR 8 AND RB TYPES 1N2970 THROUGH 1N2977, 1N2979, 1N2980, 1N2984 THROUGH 1N2986, 1N2988 THROUGH 1N2995, 1N2997, 1N2999 THROUGH 1N3005, 1N3007, 1N3008, 1N3009, 1N3011, 1N3012, 1N3014, 1N3015, A AND RA TYPES 1N3993 THROUGH 1N3998, JAN, JANTX, JANXV AND JANS |
| MIL S 19500/553 : (6) | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVER, TYPE 1N6391 JAN, JANTX AND JANTXV |
| MIL S 19500/370 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPES 2N3442, JAN, JANTX, AND JANTXV |
| MIL S 19500/398 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH FREQUENCY TYPES 2N3866 AND TX2N3866 |
| MIL S 19500/193 : C | SEMICONDUCTOR DEVICE, DIODE,SILICON RECTIFIER TYPES 1N457, 1N458 AND 1N459 |
| NASA MSFC SPEC 1198 : 1960 | SCREENING REQUIREMENTS FOR NONSTANDARD ELECTRICAL, ELECTRONIC, AND ELECTROMECHANICAL PARTS |
| MIL-S-19500-192 Revision B:1989 | SEMICONDUCTOR DEVICE, DIODE, GERMANIUM SWITCHING TYPE JAN 1N276 |
| MIL-S-19500-242 Base Document:1962 | SEMICONDUCTOR DEVICE, DIODES, SILICON TYPE N2146M |
| MIL-S-19500-25 Revision B:1968 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N240 |
| MIL S 19500/239 : LATEST | SEMICONDUCTOR DEVICE DIODE |
| MIL S 19500/295 : B | SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N2608 JAN |
| MIL-HDBK-816 Base Document:1994 | Guidelines for Developing Radiation Hardness Assurance Device Specifications |
| MIL S 19500/385 : A (3) | SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N4856 THROUGH 2N4861 JAN, JANTX, JANTXV, AND JANS |
| MIL-R-24358 Base Document:1968 | RESTORATION SHIPBOARD ELECTRONIC EQUIPMENT F, 1N AND 2N COGNIZANCE |
| MIL S 19500/599 : B | SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL S 19500/350 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N3867, 2N3867S, 2N3868 AND 2N3868S JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL S 19500/287 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON SWITCHING TYPES 2N3013 AND TX2N3013 |
| MIL S 19500/115 : H | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N3821A THROUGH 1N3828A AND 1N3016B THROUGH 1N3051, TX AND TXV |
| MIL S 19500/604 : 0 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7272, 2N7275, 2N7278 & 2N7281 JANTXVM, D, R & JANSM, D & R |
| MIL S 19500/572 : 0 | SEMICONDUCTOR DEVICE, DIODE, LIGHT-EMITTING TYPES JANTX 1N6493, 1N6494, 1N6495, 1N6500, 1N6501 AND 1N6502 |
| MIL S 19500/595 : B (1) | SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, 2N7237U, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL S 19500/547 : A | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6660 AND 2N6661, JAN, JANTX, JANTXV AND JANS |
| MIL-S-19500-267 Base Document:1963 | TRANSISTOR, PNP GERMANIUM TYPE 2N987 |
| MIL S 19500/613 : (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N7373, JANTX, JANTXV & JANS |
| MIL S 19500/453 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH FREQUENCY TYPES 2N5109 AND TX2N5109 |
| MIL-S-19500-78 Revision C:1971 | SEMICONDUCTOR DEVICE, TRANSISTOR PNP, SILICON, LOW-POWER TYPES 2N1025, 2N1026 AND 2N1469 |
| MIL S 19500/249 : LATEST | SEMICONDUCTOR DEVICE,THYRISTOR TYPE 2N1765 |
| MIL-S-19500-457 Revision A:1973 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER TYPES 2N6060, 2N6062, NON-TX, TX, AND TXV |
| MIL S 19500/74 : E | SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, MEDIUM POWER, TYPES 2N497, 2N498, 2N656 AND 2N657 |
| MIL S 19500/316 : LATEST | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON DIFFERENTIAL AMPLIFIER TYPES 2N2639, TX2N2639, 2N2642, TX2N2642 |
| MIL S 19500/431 : A | SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL, SILICON - TYPES 2N4091, 2N4092, AND 2N4093, AND TX2N4091, TX2N4092, AND TX2N4093 |
| MIL-S-19500-363 Base Document:1967 | TRANSISTOR, PNP, SILICON DUAL TYPE 3N93 |
| MIL S 19500/545 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER TYPES 2N5151, 2N5153, JAN, JANTX AND JANTXV |
| MIL S 19500/211 : B NOTICE 2 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N3164, 1N3168, 1N3170, 1N3172, 1N3174, 1N3175, 1N3176, 1N3177 & R TYPES JAN, JANTX & JANTXV |
| MIL S 19500/426 : A (2) | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER TYPE 2N4957 JAN, JANTX, JANTXV AND JANS |
| MIL-R-28894 Base Document:1986 | RELAY, HYBRID OR SOLID STATE, SENSORS, ESTABLISHED RELIABILITY GENERAL SPECIFICATION FOR |
| MIL S 19491 : G | SEMICONDUCTOR DEVICE, PACKAGING OF |
| MIL S 19500/628 : 0 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6690 THROUGH 1N6693, 1N6690US THROUGH 1N6693US, JANTX, JANTXV, AND JANS |
| MIL T 23125 : A NOTICE 1 | TEST-SET, ELECTRON TUBE, SEMI-AUTOMATIC AN/USM-118 |
| MIL S 19500/521 : A | SEMICONDUCTOR DEVICE, DIODE. LIGHT EMITTING, GREEN TYPES JAN1N6094, JTX1N6094, JAN1N6611, (CLEAR LENS), JTX1N661 (CLEAR LENS), & PANEL MOUNTED ASSEMBLY TYPES JANM19500/52101 |
| MIL S 19500/281 : LATEST | SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER TYPES 1N3747W, 1N3447WM, AND 1N3747WMR |
| MIL-S-19500-41 Revision B:1967 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, SWITCHING TYPES 2N425, 2N426, 2N427 |
| MIL S 19500/592 : B | SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR N-CHANNEL, SILICON TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, 2N7228U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-F-13926 Revision B:1984 | FIRE CONTROL MATERIAL MANUFACTURE AND INSPECTION, GENERAL SPECIFICATION FOR |
| MIL S 19500/424 : A | SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, 1N5186, 1N5187, 1N5188, 1N5190, JAN, JANTX, JANTXV |
| MIL S 19500/371 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPES 2N3902, TX2N3902, 2N5157, AND TX2N5157 |
| MIL S 19500/611 : (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING TYPES 2N7374, 2N7375, 2N7376& 2N7377, JANTS, JANTXV & JANS |
| MIL R 83536 : SUPP 1 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY |
| MIL-C-5026 Revision F:1984 | CUTOUT RELAY, ENGINE GENERATOR |
| MIL-M-55564 Base Document:1969 | MAINTENANCE KIT, ELECTRONIC EQUIPMENT MK-1035/ARC-131 ( ) (UNITS OF) |
| MIL-HDBK-814 Base Document:1994 | IONIZING DOSE AND NEUTRON HARDNESS ASSURANCE GUIDELINES FOR MICROCIRCUITS AND SEMICONDUCTOR DEVICES |
| MIL S 19500/429 : E | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615UL, 1N5617UL, 1N5619UL, 1N5621UL, 1N5623UL, 1N5615US, 1N5617US 1N5619US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL S 19500/156 : J | SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B, 1N935B-1, 1N937B-1, 1N938B-1, 1N939B, 1N940B-1, JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/412 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N3846, 2N3847, JANTX, JANTXV AND JANS |
| MIL S 19500/533 : D | SEMICONDUCTOR DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6336US; PLUS C AND D TOLERANCE SUFFIX; JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/486 : D | SEMICONDUCTOR DEVICE, COUPLER, OPTO-ELECTRONIC, SOLID STATE 4N22, 4N22A, 4N23, 4N23A, 4N24, 4N24A, NON-TX, TX AND TXV |
| MIL-S-19500-338 Base Document:1965 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, SWITCHING TYPE 2N3449 |
| MIL-S-19500-362 Base Document:1966 | SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER TYPES 1N1132 AND 1N1132R |
| MIL S 19500/348 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N3467, 2N3467L, 2N3468 AND 2N3468L JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/182 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON LOW POWER TYPES 2N720A, 2N1893, 2N1893S, JAN, JANTX AND JANTXV |
| MIL-S-19500-462 Revision A:1973 | SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON, POWER TYPES 2N5966 AND2N5968 |
| MIL S 19500/286 : E | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, MEDIUM-RECOVERY TYPES, 1N4245 THROUGH 1N4249 JAN, JANTX, JANTXV & JANHC |
| MIL-S-19500-189 Revision B:1972 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N1224 AND 2N1225 |
| MIL S 19500/399 : A (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPE 2N3960, JANTX AND JANTXV |
| MIL-S-19500-11 Revision C:1970 | SEMICONDUCTOR DEVICE TRANSISTOR NPN GERMANIUM SWITCHING TYPE 2N167A |
| MIL S 19500/612 : (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER, TYPE 2N7372, JANTX, JANTXV & JANS |
| MIL S 19500/597 : B | SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPE 2N7334 JANTX, JANTXV, JANS & JANC |
| MIL S 19500/358 : D | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATION, POWER 1N3305B TO 1N3350B,1N4549B TO 1N4554B,TX1N3305B TO TX1N3350B,TX1N4549B TO TX1N4554B, 1N3305RB TO 1N335ORB |
| MIL-S-19500-450 Revision A:1973 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER TYPES 2N5958, 2N5960, TX2N5958, TX2N5960 |
| MIL S 19500/603 : A | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7268, 2N7269 & 2N7270 JANTXVM, D, R, H & JANSM, D, R, H |
| MIL S 19500/510 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6249, 2N6250, 2N6251, NON-TX, TX AND TXV |
| MIL S 19500/157 : K | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N941B, 1N943B THROUGH 1N945B, -1, JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/324 : LATEST | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, TYPE JAN-TX-2N2219 |
| MIL S 19500/354 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N2604 AND 2N2605 JAN, JANTX, JANTXV, AND JANS |
| MIL-S-19500-272 Revision C:1968 | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REGULATOR TYPES (TX AND NON-TX) 1N3993A THROUGH 1N4000A AND THE RA |
| MIL S 19500/117 : K | SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N962B THROUGH 1N992B, 1N962B-1 THROUGH 1N992B-1, JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/461 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH POWER TYPE 2N6211, TX2N6211, 2N6212, TX2N6312, 2N6213, TX2N6213 |
| MIL S 19500/503 : A | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, TX AND NON-TX TYPES 1N6073 THROUGH 1N6081 |
| MIL-S-19500-288 Base Document:1964 | TRANSISTOR, PNP, SILICON TYPE 2N2377 |
| MIL S 19500/159 : H | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, AND 1N821-1, 1N823-1, 1N825-1, 1N827-1, 1N829-1, JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/222 : LATEST | SEMICONDUCTOR DEVICE,TRANSISTOR,PNP SWITCH/2N1450M |
| MIL S 19500/548 : B | SEMICONDUCTOR DEVICE, COUPLER, OPTO-ELECTRONIC, SOLID STATE TYPE 4N47, 4N48 AND 4N49, JAN, JANTX, JANTXV AND JANS |
| MIL-S-19500-204 Revision F:1982 | SEMICONDUCTOR DEVICES, THYRISTOR, REVERSE BLOCKING, SILICON, TYPES 2N1792, 2N1793, 2N1795, 2N1797, 2N1798, 2N1799, 2N1800, 2N1805, 2N1806, 2N1910, 2N1911, 2N1913, 2N1915, 2N1916, 2N2031, JAN, JANTX, AND JANTXV |
| MIL S 19500/102 : A | SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH POWER TYPES 2N1016B, 2N1016C, AND 2N1016D |
| MIL S 19500/477 : B | SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, IN5804, 1N5806, 1N5807, 1N5809 AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5809US, AND 1N5811US, JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC |
| MIL-S-19500-293 Revision A:1966 | SEMICONDUCTOR DEVICE, DIODE, TYPE 1N93A |
| MIL S 19500/319 : LATEST | SEMICONDUCTOR DEVICE, NPN, POWER TYPE 2N2525 |
| MIL-S-19500-30 Revision A:1970 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, ALLOY JUNCTION TYPE 2N123 |
| MIL-D-87157-2 Base Document:1987 | DISPLAYS, DIODE, LIGHT EMITTING, SOLID STATE, RED, ALPHANUMERIC, WITH ON BOARD DECODER DRIVER |
| MIL S 19500/560 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPE 2N5339 JAN, JANTX AND JANTXV |
| MIL S 19500/574 : 0 | SEMICONDUCTOR DEVICE, DIODE, LIGHT-EMITTING TYPES JANTX 1N6497, 1N6498, 1N6499, 1N6503, 1N6504 AND 1N6505 |
| MIL S 19500/317 : F | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2369A, 2N3227, 2N449 JAN, JANTX, JANTXV AND JANS |
| MIL-C-83443 Revision A:1975 | CELL, SOLAR, SILICON, GENERAL SPECIFICATION FOR |
| MIL S 19500/535 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER TYPES 2N5003, 2N5005, JAN, JANTX AND JANTXV |
| MIL-S-19500-46 Revision B:1966 | SEMICONDUCTOR DEVICE,TRANSISTOR, PNP, GERMANIUM, POWER TYPES 2N574, 2N575, 2N575A, 2N1157A |
| MIL-S-19500-442 Base Document:1970 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HI-FREQUENCY POWER TYPES 2N5071, TX2N5071 |
| MIL-S-19500-388 Revision B:1992 | SEMICONDUCTOR DEVICE, TRANSISTOR, PN, SILICON, UNIJUNCTION TYPES 2N4947, 2N4948 AND 2N4949 JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/558 : B | SEMICONDUCTOR DEVICE, UNITIZED, PNP, SILICON, SWITCHING, FOUR TRANSISTOR ARRAY TYPES 2N6987, 2N6987U, AND 2N6988, JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/568 : NOTICE 1 | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPE 2N6962, 2N6963, 2N6964 AND 2N6965 JANTX, JANTXV, JANS |
| MIL-S-19500-56 Revision B:1969 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPES 2N416, AND 2N417 |
| MIL S 19500/212 : LATEST | SEMICONDUCTOR DIODE,SILICON POWER RECTIFIER,1N3263 |
| MIL S 19500/169 : H | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N3070, 1N3070-1, 1N4938, 1N4938-1 JAN, JANTX, JANTXV, AND JANS |
| MIL-S-19500-465 Base Document:1972 | SEMICONDUCTOR DEVICE DIODE SILICON RECTIFIER ASSEMBLY HIGH VOLTAGE |
| MIL S 19500/233 : LATEST | SEMICONDUCTOR DEVICE DIODE SILICON/TYPE 1N23WE |
| MIL-S-19500-175 Revision C:1968 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPES 2N650A, 2N651A, AND 2N652A |
| MIL-A-81307 Base Document:1965 | Amplifiers, Servomotor, General Specification |
| MIL S 19500/508 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON POWER TYPES 2N6437, TX2N6437, TXV2N6437, 2N6438, TX2N6438, TXV2N6438 JANTX AND JANTXV |
| MIL S 19500/466 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON POWER TYPES 2N5683, TX2N5683, 2N5684, JAN, JANTX, AND JANTXV |
| MIL S 19500/601 : A | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7261 AND 2N7262 JANTXVM, D,R,F,G AND H AND JANSM, D,R,F,G AND H |
| MIL-HDBK-815 Base Document:1994 | DOSE-RATE HARDNESS ASSURANCE GUIDELINES |
| MIL-S-19500-73 Revision B:1960 | SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON SWITCHING TYPE 2N560 |
| MIL-S-19500-451 Revision A:1973 | SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPES 2N5957, 2N5959, TX2N5957 AND TX2N5959 |
| MIL S 19500/402 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N3739, JANTX & JANTXV |
| BS EN 2995-005:2006 | Aerospace series. Circuit breakers, single-pole, temperature compensated, rated current 1 A to 25 A With polarized signal contact. Product standard |
| BS EN 3662-005:2006 | Aerospace series. Circuit breakers, three-pole, temperature compensated, rated current 20 A to 50 A With polarized signal contact. Product standard |
| BS EN 2996-005:2006 | Aerospace series. Circuit breakers, three-pole, temperature compensated, rated current 1 A to 25 A With polarized signal contact. Product standard |
| BS EN 3661-005:2006 | Aerospace series. Circuit breakers, single-pole, temperature compensated, rated current 20 A to 50 A With polarized signal contact. Product standard |
| EN 2996-005:2006 | Aerospace series - Circuit breakers, three-pole, temperature compensated, rated current 1 A to 25 A - Part 005: With polarized signal contact - Product standard |
| EN 3661-005:2006 | Aerospace series - Circuit breakers, single-pole, temperature compensated, rated current 20 A to 50 A - Part 005: With polarized signal contact - Product standard |
| EN 3662-005:2006 | Aerospace series - Circuit breakers, three-pole, temperature compensated, rated current 20 A to 50 A - Part 005: With polarized signal contact - Product standard |
| EN 3662-006:2006 | Aerospace series - Circuit breakers, three-pole, temperature compensated, rated current 20 A to 50 A - Part 006: With polarized signal contact - Bus-bar version - Product standard |
| EN 2995-005:2006 | Aerospace series - Circuit breakers, single-pole, temperature compensated, rated current 1 A to 25 A - Part 005: With polarized signal contact - Product standard |
| EN 3661-006:2006 | Aerospace series - Circuit breakers, single-pole, temperature compensated, rated current 20 A to 50 A - Part 006: With polarized signal contact - Bus bar version - Product standard |
| MIL S 19500/452 : C | SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL, VOLTAGE REFERENCE TYPES 1N4565A TO 1N4574A AND 1N4565A-1 TO 1N4574A-1 JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/353 : B NOTICE 2 | SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N832B, JAN, JANTX, JANTXV |
| MIL-S-19500-360 Base Document:1966 | SEMICONDUCTOR DEVICE, TRANSISTOR TYPES 2N2996, 2N2997 |
| MIL S 19500/534 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N5004, JAN, JANTX AND JANTXV |
| MIL-R-23098 Revision A:1970 | REGULATORS, LINE VOLTAGE, SINGLE PHASE. |
| MIL-S-48685 Base Document:1987 | SAFETY AND ARMING DEVICE, GUIDED MISSILE - M143E1 ELECTRICAL PARTS AND ASSEMBLIES FOR |
| MIL-E-29581 Base Document:1991 | EARCUP, UNIT ACTIVE NOISE REDUCTION SYSTEM |
| MIL C 83383 : C | CIRCUIT BREAKER, REMOTE CONTROL THERMAL, TRIP FREE, GENERAL SPECIFICATION FOR |
| MIL S 19500/411 : G | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420, 1N5415US THROUGH 1N5420US, JAN, JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR AND JANSH |
| MIL-C-64030 Base Document:1986 | CONTROL INDICATOR FOR DISPENSER AND MINES GROUND M131 |
| MIL-G-49274 Base Document:1984 | Generator, Digital Data SG-1139 ( )/G (No S/S Document) |
| MIL-T-55570 Base Document:1967 | TEST SET, ELECTRONIC CIRCUIT PLUG IN UNIT AN/ARM-87 ( ) (UNIT OF) |
| MIL C 17361 : F | CIRCUIT BREAKERS, AIR, ELECTRIC, INSULATED HOUSING (SHIPBOARD USE) |
| MIL-B-29511 Base Document:1988 | BUOY INTERFACE UNIT (BIU), J-3958/BRT-6 |
| MIL S 19500/488 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N5671 AND 2N5672, JAN, JANTX, JANTXV AND JANS |
| MIL-D-24304 Revision B:1988 | DIFFERENTIAL PRESSURE TRANSDUCER EQUIPMENT (ELECTRICAL) (NAVAL SHIPBOARD USE) |
| MIL P 7788 : F | PANEL, INFORMATION INTEGRALLY ILLUMINATED |
| MIL S 19500/240 : F | SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N645-1, 1N647-1, 1N649-1, 1N-645UR-1, AND 1N649UR-1 JAN, JANTX AND JANTXV |
| MIL-P-11268 Revision L:1983 | PART, MATERIALS, AND PROCESSES USED IN ELECTRONIC EQUIPMENT |
| MIL-C-25601 Revision C:1969 | COUPLER, ANTENNA CU-308D/U |
| MIL-M-24605 Revision A:1988 | MONITOR, HEAT STRESS |
| MIL-R-14368 Revision C:1974 | REGULATOR ASSEMBLY, RELAY ASSEMBLY, AND VOLTAGE REGULATOR ASSEMBLY: 24-VOLT (NOMINAL RATING), 100 TO 400 AMPERE, DIRECT CURRENT |
| MIL S 19500/502 : B | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER TYPES 2N6058 AND 2N6059 JAN, JANTX AND JANTXV |
| MIL-E-81512 Base Document:1968 | ENCODER, SHAFT POSITION TO DIGITAL, CONTACT TYPE, ALTITUDE REPORTING, GENERAL SPECIFICATION FOR |
| MIL S 19500/577 : LATEST | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE TYPES IN6528 THROUGH IN6535 JANTX, JANTXV AND JANS |
| DOD STD 1686 : 0 | ELECTROSTATIC DISCHARGE CONTROL PROGRAM FOR PROTECTION OF ELECTRICAL AND ELECTRONIC PARTS ASSEMBLIES AND EQUIPMENT (EXCLUDING ELECTRICALLY INITIATED EXPLOSIVE DEVICES)(METRIC) |
| MIL S 19500/349 : C (2) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPES 2N3506, 2N3506A, 2N3506L, 2N3507, AND 2N3507A, 2N3507L, JAN, JANTX, JANTXV AND JANS |
| MIL-P-24587 Base Document:1979 | POWER SUPPLY, UNINTERRUPTIBLE, SOLID STATE (NAVAL SHIPBOARD) |
| MIL-HDBK-246 Revision A:1982 | PROGRAM MANAGERS GUIDE FOR THE STANDARD ELECTRONIC MODULES PROGRAM |
| MIL-A-9286 Revision C:1969 | AF AMPLIFIER AM-476()/AIC-10 |
| MIL-T-22007 Revision A:1973 | TEST SET, BATTERY AN/AMM-1 |
| DOD-D-24620-1 Base Document:1984 | DETECTOR, PIN, FIBER OPTIC 820-910 NANOMETERS WAVELENGTH RANGE GLASS PIGTAILED TYPE |
| MIL-T-24742 Base Document:1990 | TRANSDUCER, PRESSURE AND DIFFERENTIAL PRESSURE, MINIATURE (ELECTRICAL) (NAVAL SHIPBOARD USE) |
| MIL C 7115 : F | CONVERTER, AIRCRAFT, GENERAL SPECIFICATION FOR |
| MIL-P-24764 Base Document:1991 | POWER SUPPLIES, SHIPBOARD, ELECTRONIC, GENERAL SPECIFICATION FOR |
| MIL S 19500/437 : C | SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE, VOLTAGE REGULATOR TYPES 1N5518B, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1, JAN, JANTX, JANTXV, JANHC AND JANKC |
| MIL-S-19500-425 Base Document:1969 | SEMICONDUCTOR DEVICE, TRANSISTOR, PN, SILICON, UNIJUNCTION JAN2N5431, AND JANTX2N5431 |
| MIL S 19500/498 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER TYPES 2N6306, TX2N6306, TXV2N6306, 2N6308, TX2N6308, TXV2N6308 |
| MIL S 19500/620 : B | SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N5822 & 1N5822US, JANTX, JANTXV & JANC |
| MIL S 19500/302 : A | SEMICONDUCTOR DEVICE, TRANSISTOR NPN SILICON LOW POWER TYPES 2N2708 |
| MIL S 19500/393 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER TYPES 2N3418, 2N3418S, 2N3419, 2N3419S, 2N3421, 2N3421S JAN, JANTX, JANTXV, AND JANS |
| MIL-S-19500-88 Base Document:1960 | |
| MIL S 19500/369 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N3441 AND TX2N3441 |
| MIL-P-85576 Revision B:1987 | POWER SUPPLY PP-2581C/A |
| MIL S 19500/241 : F (1) | SEMICONDUCTOR DEVICE, DIODE, SILICON SWITCHING TYPES 1N3595 AND TX1N3595 |
| MIL-STD-242-5 Revision G:1981 | ELECTRONIC EQUIPMENT PARTS SELECTED STANDARDS MICROCIRCUITS AND SEMICONDUCTORS |
| MIL S 19500/323 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, JPNP, SILICON, SWITCHING TYPES 2N3250A AND 2N3251A JAN, JANTX, JANTYXV, AND JANS |
| MIL-S-19500-202 Revision A:1962 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIERS, TYPES JAN 1N538M JAN 1N540M AND JAN 1N547M |
| MIL S 19500/570 : A | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON LOGIC-LEVEL, TYPES 2N6901 & 2N6903 JANTX, JANTXU & JANS |
| MIL S 19500/300 : LATEST | SEMICONDUCTOR DEVICE, PHOTO-TRANSISTOR, NPN, SILICON TYPE IN4378 |
| MIL-S-19500-205 Revision B:1990 | SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, LOW LEVEL, FORWARD-VOLTAGE-REFERENCE TYPE 1N3287 JAN, JANTX, AND JANTXV |
| MIL-S-19500-257 Revision A:1968 | SEMICONDUCTOR DEVICE DIODE SILICON TYPE 1N658 |
| MIL S 19500/555 : F | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6788, 2N6790, 2N6792, + 2N6794 JAN, JANTX, JANTXV, JANS, JANHC, JANKC |
| MIL-S-19500-237 Revision A:1970 | SEMICONDUCTOR DEVICE DIODE SILICON VIDEO DETECTOR TYPE 1N32 |
| MIL S 19500/392 : C (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N3485A, 2N3486A, JAN, JANTX AND JANTXV |
| MIL-S-19500-381 Base Document:1968 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, TYPES 2N2034, 2N2858, 2N2859, 2N2911 AND TX2N2034, TX2N2858, TX2N2859, TX2N2911 |
| MIL S 19500/495 : A (3) | SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, NPN, SILICON TYPES 2N5793, TX2N5793, TXV2N5793, 2N5794, TX2N5794, TXV2N5794 |
| MIL-S-19500-24 Revision D:1970 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, POWER TYPE 2N158 |
| MIL S 19500/395 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPES 2N3735, 2N3735L AND 2N3737, JANTX, JANTXV AND JANS |
| MIL S 19500/252 : LATEST | SEMICONDUCTOR DIODE,GERMANIUM R-F MIXER 1N2792 |
| MIL S 19500/505 : A | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER TYPES 2N6286, 2N6287, NON-TX, TX AND TXV |
| MIL S 19500/523 : A | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER TYPES 2N6383, 2N6384, 2N6385 NON-TX, TX AND TXV |
| MIL S 19500/434 : B | SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555 TO 1N5558 AND 1N5610 TO 1N5613 JAN, JANTX, JANTXV AND JANS |
| MIL-S-19500-318 Base Document:1964 | SEMICONDUCTOR DEVICE, DIODE, POWER RECTIFIER 1N1084 |
| MIL-S-19500-334 Revision A:1971 | SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER TYPES 1N3655A, 1N3655AM & 1N3655AMR |
| MIL S 19500/469 : A | SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, SINGLE PHASE, FULL WAVE BRIDGE RECTIFIER, JANTX AND JANTXV |
| MIL-R-55216 Base Document:1962 | RADIOSONDE TEST SET TS-1348 ( ) GMM-1 |
| MIL S 19500/617 : 0 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6672 THRU 1N6674 AND 1N6672R THRU 1N6674R, JANTX, JANTXV AND JANS |
| MIL-S-19500-213 Revision C:1971 | SEMICONDUCTOR DEVICE, TRANSISTOR PNP GERMANIUM LOW POWER TYPE 2N2084 |
| MIL S 19500/483 : A | SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, THREE PHASE, FULL WAVE BRIDGE RECTIFIER PART NUMBERS M19500/483-01 THROUGH M19500/483-04 |
| PREN 2995-005 : 200P3 | AEROSPACE SERIES - CIRCUIT BREAKERS, SINGLE-POLE, TEMPERATURE COMPENSATED, RATED CURRENT 1 A TO 25 A - PART 005: WITH POLARIZED SIGNAL CONTACT - PRODUCT STANDARD |
| MIL S 19491 : G | SEMICONDUCTOR DEVICE, PACKAGING OF |
| EIA 554 : 1996 | METHOD SELECTION FOR ASSESSMENT OF NONCONFORMING LEVELS IN PARTS PER MILLION (PPM) |
| MIL-STD-45662 Revision A:1988 | CALIBRATION SYSTEMS REQUIREMENTS |
| MIL-STD-750 Revision F:2011 | TEST METHODS FOR SEMICONDUCTOR DEVICES |
| FED-STD-H28 Revision A:1994 | Screw-Thread Standards for Federal Services |
| EIA 557 : 2006 | STATISTICAL PROCESS CONTROL SYSTEMS |
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