SEMI M11 : 2004
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS FOR INTEGRATED CIRCUIT (IC) APPLICATIONS
Superseded date
01-11-2005
Superseded by
Published date
12-01-2013
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Describes and provides examples of silicon epitaxial wafer requirements for integrated circuit device manufacture. It is restricted to wafers of diameter 100 mm or greater with epitaxial layer thickness less than or equal to 25 m.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (05/2001)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI M48 : 2001 | GUIDE FOR EVALUATING CHEMICAL-MECHANICAL POLISHING PROCESSES OF FILMS ON UNPATTERNED SILICON SUBSTRATES |
| SEMI T2 : 1998(R2004) | SPECIFICATION FOR MARKING OF WAFERS WITH A TWO-DIMENSIONAL MATRIX CODE SYMBOL |
| SEMI M2 : 2003 | SPECIFICATION FOR SILICON EPITAXIAL WAFERS FOR DISCRETE DEVICE APPLICATIONS |
| SEMI MF1393 : 2002 | TEST METHOD FOR DETERMINING NET CARRIER DENSITY IN SILICON WAFERS BY MILLER FEEDBACK PROFILER MEASUREMENTS WITH A MERCURY PROBE |
| SEMI MF1726 : 2010(R2015) | PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON WAFERS |
| SEMI MF1239 : 2005(R2016) | TEST METHOD FOR OXYGEN PRECIPITATION CHARACTERISTICS OF SILICON WAFERS BY MEASUREMENT OF INTERSTITIAL OXYGEN REDUCTION |
| SEMI M44 : 2005(R2011) | GUIDE TO CONVERSION FACTORS FOR INTERSTITIAL OXYGEN IN SILICON |
| SEMI MF723 : 2007E(R2012)E | PRACTICE FOR CONVERSION BETWEEN RESISTIVITY AND DOPANT OR CARRIER DENSITY FOR BORON-DOPED, PHOSPHOROUS-DOPED, AND ARSENIC-DOPED SILICON |
| SEMI M18 : 2012 | GUIDE FOR DEVELOPING SPECIFICATION FORMS FOR ORDER ENTRY OF SILICON WAFERS |
| SEMI MF1392:2007 | TEST METHOD FOR DETERMINING NET CARRIER DENSITY PROFILES IN SILICON WAFERS BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY PROBE |
| SEMI MF951 : 2005(R2016) | TEST METHOD FOR DETERMINATION OF RADIAL INTERSTITIAL OXYGEN VARIATION IN SILICON WAFERS |
| SEMI MF95 : 2007(R2018) | TEST METHOD FOR THICKNESS OF LIGHTLY DOPED SILICON EPITAXIAL LAYERS ON HEAVILY DOPED SILICON SUBSTRATES USING AN INFRARED DISPERSIVE SPECTROPHOTOMETER |
| SEMI MF374 :2012(R2018) | TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE |
| SEMI MF110 : 2007(R2018) | TEST METHOD FOR THICKNESS OF EPITAXIAL OR DIFFUSED LAYERS IN SILICON BY THE ANGLE LAPPING AND STAINING TECHNIQUE |
| SEMI MF398 : 1992(R2002) | TEST METHOD FOR MAJORITY CARRIER CONCENTRATION IN SEMICONDUCTORS BY MEASUREMENT OF WAVENUMBER OR WAVELENGTH OF THE PLASMA RESONANCE MINIMUM |
| SEMI MF525 : 2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE |
| SEMI MF1241 : 95(R2000) | TERMINOLOGY OF SILICON TECHNOLOGY |
| SEMI MF154 : 2005(R2016) | GUIDE FOR IDENTIFICATION OF STRUCTURES AND CONTAMINANTS SEEN ON SPECULAR SILICON SURFACES |
| SEMI MF1727 : 2010(R2015) | PRACTICE FOR DETECTION OF OXIDATION INDUCED DEFECTS IN POLISHED SILICON WAFERS |
| SEMI M2 : 2003 | SPECIFICATION FOR SILICON EPITAXIAL WAFERS FOR DISCRETE DEVICE APPLICATIONS |
| SEMI MF672 : 2007 | TEST METHOD FOR MEASURING RESISTIVITY PROFILES PERPENDICULAR TO THE SURFACE OF A SILICON WAFER USING A SPREADING RESISTANCE PROBE |
| SEMI MF523 : 2007(R2018) | PRACTICE FOR UNAIDED VISUAL INSPECTION OF POLISHED SILICON WAFER SURFACES |
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