SEMI M2 : 2003
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
SPECIFICATION FOR SILICON EPITAXIAL WAFERS FOR DISCRETE DEVICE APPLICATIONS
01-11-2005
12-01-2013
Defines silicon epitaxial wafer requirements for discrete semiconductor device manufacture. Restricted to wafers with device feature sizes in excess of 1 micron or wafers with epi layers thicker than 25 microns. By defining inspection methods and acceptance criteria, both consumers and suppliers may uniformly define product characteristics and quality requirements. Primary standardized properties set forth in specification relate to electrical, physical, and surface defect parameters. Complete purchase specification requires additional physical properties be specified along with suitable test methods for measurement. SEMI M18 may be used for this purpose. Specifications are specifically directed to silicon homoepitaxial deposits on homogeneous silicon substrates only, exclusive of VLSI application.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (05/2001)
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| DocumentType |
Standard
|
| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI T2 : 1998(R2004) | SPECIFICATION FOR MARKING OF WAFERS WITH A TWO-DIMENSIONAL MATRIX CODE SYMBOL |
| SEMI M61 : 2007(R 2019) | SPECIFICATION FOR SILICON EPITAXIAL WAFERS WITH BURIED LAYERS |
| SEMI M11 : 2004 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS FOR INTEGRATED CIRCUIT (IC) APPLICATIONS |
| SEMI MF1393 : 2002 | TEST METHOD FOR DETERMINING NET CARRIER DENSITY IN SILICON WAFERS BY MILLER FEEDBACK PROFILER MEASUREMENTS WITH A MERCURY PROBE |
| SEMI MF1726 : 2010(R2015) | PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON WAFERS |
| SEMI M17 : 2010(R2015) | GUIDE FOR A UNIVERSAL WAFER GRID |
| SEMI MF723 : 2007E(R2012)E | PRACTICE FOR CONVERSION BETWEEN RESISTIVITY AND DOPANT OR CARRIER DENSITY FOR BORON-DOPED, PHOSPHOROUS-DOPED, AND ARSENIC-DOPED SILICON |
| SEMI M18 : 2012 | GUIDE FOR DEVELOPING SPECIFICATION FORMS FOR ORDER ENTRY OF SILICON WAFERS |
| SEMI MF1392:2007 | TEST METHOD FOR DETERMINING NET CARRIER DENSITY PROFILES IN SILICON WAFERS BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY PROBE |
| SEMI MF95 : 2007(R2018) | TEST METHOD FOR THICKNESS OF LIGHTLY DOPED SILICON EPITAXIAL LAYERS ON HEAVILY DOPED SILICON SUBSTRATES USING AN INFRARED DISPERSIVE SPECTROPHOTOMETER |
| SEMI MF374 :2012(R2018) | TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE |
| SEMI MF110 : 2007(R2018) | TEST METHOD FOR THICKNESS OF EPITAXIAL OR DIFFUSED LAYERS IN SILICON BY THE ANGLE LAPPING AND STAINING TECHNIQUE |
| SEMI MF398 : 1992(R2002) | TEST METHOD FOR MAJORITY CARRIER CONCENTRATION IN SEMICONDUCTORS BY MEASUREMENT OF WAVENUMBER OR WAVELENGTH OF THE PLASMA RESONANCE MINIMUM |
| SEMI MF525 : 2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE |
| SEMI MF1241 : 95(R2000) | TERMINOLOGY OF SILICON TECHNOLOGY |
| SEMI MF154 : 2005(R2016) | GUIDE FOR IDENTIFICATION OF STRUCTURES AND CONTAMINANTS SEEN ON SPECULAR SILICON SURFACES |
| SEMI MF672 : 2007 | TEST METHOD FOR MEASURING RESISTIVITY PROFILES PERPENDICULAR TO THE SURFACE OF A SILICON WAFER USING A SPREADING RESISTANCE PROBE |
| SEMI MF523 : 2007(R2018) | PRACTICE FOR UNAIDED VISUAL INSPECTION OF POLISHED SILICON WAFER SURFACES |
| SEMI M11 : 2004 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS FOR INTEGRATED CIRCUIT (IC) APPLICATIONS |
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