SEMI M40 : 2014
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
GUIDE FOR MEASUREMENT OF ROUGHNESS OF PLANAR SURFACES ON POLISHED WAFERS
17-11-2023
12-01-2013
Specifies procedures for specifying the measurements to be used in characterizing and reporting roughness of the planar surfaces of polished wafers of silicon, various compound semiconductors, sapphire, and other types of planar wafer materials.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (05/2001)
|
| DocumentType |
Standard
|
| PublisherName |
Semiconductor Equipment & Materials Institute
|
| Status |
Superseded
|
| SupersededBy |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M83 : 2013 | TEST METHOD FOR DETERMINATION OF DISLOCATION ETCH PIT DENSITY IN MONOCRYSTALS OF 3-5 COMPOUND SEMICONDUCTORS |
| SEMI 3D16 : 2016 | SPECIFICATION FOR GLASS BASE MATERIAL FOR SEMICONDUCTOR PACKAGING |
| SEMI M84 : 2014E | SPECIFICATIONS FOR POLISHED SINGLE CRYSTAL SILICON WAFERS FOR GALLIUM NITRIDE-ON-SILICON APPLICATIONS |
| SEMI 3D2 : 2016 | SPECIFICATION FOR GLASS CARRIER WAFERS FOR 3DS-IC APPLICATIONS |
| SEMI HB1 : 2016 | SPECIFICATION FOR SAPPHIRE WAFERS INTENDED FOR USE FOR MANUFACTURING HIGH BRIGHTNESS-LIGHT EMITTING DIODE DEVICES |
| SEMI M20 : 2015 | PRACTICE FOR ESTABLISHING A WAFER COORDINATE SYSTEM |
| SEMI E89 : 2007(R2013) | GUIDE FOR MEASUREMENT SYSTEM ANALYSIS (MSA) |
| SEMI M50 : 2016 | TEST METHOD FOR DETERMINING CAPTURE RATE AND FALSE COUNT RATE FOR SURFACE SCANNING INSPECTION SYSTEMS BY THE OVERLAY METHOD |
Access your standards online with a subscription
Features
-
Simple online access to standards, technical information and regulations.
-
Critical updates of standards and customisable alerts and notifications.
-
Multi-user online standards collection: secure, flexible and cost effective.