• Shopping Cart
    There are no items in your cart

ASTM F 1192 : 2011

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

View Superseded by

Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices

Available format(s)

Hardcopy , PDF

Superseded date

11-06-2024

Language(s)

English

Published date

01-10-2011

€74.48
Excluding VAT

Committee
F 01
DocumentType
Guide
Pages
11
PublisherName
American Society for Testing and Materials
Status
Superseded
SupersededBy
Supersedes

1.1 This guide defines the requirements and procedures for testing integrated circuits and other devices for the effects of single event phenomena (SEP) induced by irradiation with heavy ions having an atomic number Z 2. This description specifically excludes the effects of neutrons, protons, and other lighter particles that may induce SEP via another mechanism. SEP includes any manifestation of upset induced by a single ion strike, including soft errors (one or more simultaneous reversible bit flips), hard errors (irreversible bit flips), latchup (persistent high conducting state), transients induced in combinatorial devices which may introduce a soft error in nearby circuits, power field effect transistor (FET) burn-out and gate rupture. This test may be considered to be destructive because it often involves the removal of device lids prior to irradiation. Bit flips are usually associated with digital devices and latchup is usually confined to bulk complementary metal oxide semiconductor, (CMOS) devices, but heavy ion induced SEP is also observed in combinatorial logic programmable read only memory, (PROMs), and certain linear devices that may respond to a heavy ion induced charge transient. Power transistors may be tested by the procedure called out in Method 1080 of MIL STD 750.

1.2 The procedures described here can be used to simulate and predict SEP arising from the natural space environment, including galactic cosmic rays, planetary trapped ions, and solar flares. The techniques do not, however, simulate heavy ion beam effects proposed for military programs. The end product of the test is a plot of the SEP cross section (the number of upsets per unit fluence) as a function of ion LET (linear energy transfer or ionization deposited along the ion's path through the semiconductor). This data can be combined with the system's heavy ion environment to estimate a system upset rate.

1.3 Although protons can cause SEP, they are not included in this guide. A separate guide addressing proton induced SEP is being considered.

1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

DSCC 17232B:2023 MICROCIRCUIT, HYBRID, LINEAR, SINGLE CHANNEL, DC-DC CONVERTER
DSCC 99560H:2022 MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED DUAL NON-INVERTING MOSFET DRIVER, MONOLITHIC SILICON
DSCC 06233D:2023 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, LOW VOLTAGE CMOS, MINIMUM SKEW ONE-TO-EIGHT CLOCK DRIVER, LVTTL COMPATIBLE INPUTS AND OUTPUTS, MONOLITHIC SILICON
DSCC 17237A:2023 MICROCIRCUIT, BiCMOS, RADIATION HARDENED, ULTRA LOW NOISE, DUAL LOOP CLOCK JITTER CLEANER, MONOLITHIC SILICON
DSCC 89764D:2023 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY, MONOLITHIC SILICON
DSCC 13206C:2023 MICROCIRCUIT, DIGITAL-LINEAR, VOLTAGE SUPERVISOR, MONOLITHIC SILICON
DSCC V62/22611A:2023 MICROCIRCUIT, DIGITAL-LINEAR, 12 BIT,RF SAMPLING ANALOG TO DIGITAL CONVERTER MONOLITHIC SILICON
DSCC 01517G:2022 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 3.3 V, 32K X 8-BIT PROM, MONOLITHIC SILICON
DSCC V62/22614:2022 MICROCIRCUIT, DIGITAL-LINEAR, 12-BIT ANALOG MONITORING AND CONTROL SOLUTION WITH MULTICHANNEL ADC, DACs. AND TEMPERATURE SENSORS, MONOLITHIC SILICON
DSCC 12229D:2023 MICROCIRCUIT, DIGITAL, CMOS, MICROPROCESSOR WITH DECOUPLING CAPACITORS, MONOLITHIC SILICON
DSCC 88706J:2023-10 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, OCTAL BUFFER / LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
DSCC 95652F:2023 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, TRIPLE AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-20 THREE-INPUT NAND GATE, MONOLITHIC SILICON

Access your standards online with a subscription

Features

  • Simple online access to standards, technical information and regulations.

  • Critical updates of standards and customisable alerts and notifications.

  • Multi-user online standards collection: secure, flexible and cost effective.