ASTM F 1241 : 1995 : R2000
Withdrawn
A Withdrawn Standard is one, which is removed from sale, and its unique number can no longer be used. The Standard can be withdrawn and not replaced, or it can be withdrawn and replaced by a Standard with a different number.
Standard Terminology of Silicon Technology (Withdrawn 2003)
Hardcopy , PDF
05-11-2013
English
10-06-2000
Important note : Users cannot be edited or removed once added to your Multi user PDF.CONTAINED IN VOL. 10.05, 2001 Covers terms and definitions used in relation to semiconductor grade silicon crystal and wafers. Covers terms describing attributes of silicon wafers as specified in SEMI Specifications M1 and SEMI Format M18.
| Committee |
F 01
|
| DocumentType |
Reference Material
|
| Pages |
8
|
| PublisherName |
American Society for Testing and Materials
|
| Status |
Withdrawn
|
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This terminology covers terms and definition used in relation to semiconductor grade silicon crystal and wafers.
1.2 This terminology covers terms describing attributes of silicon wafers as specified in SEMI Specifications M1 and SEMI Format M18. These attributes include electrical, structural, chemical, and mechanical characteristics of polished and epitaxial wafers as well as surface defects and contamination.
1.3 This terminology is applicable for use in connection with research, developement, process control, procurement, and inspection of silicon material.
1.4 Originally the terms and definitions included in this standard were extracted from other ASTM Standards relating to silicon technology. The original source standards for such terms are identified by their designations immediately following the definition. All such standards are found in this volume of the Annual Book of ASTM Standards . More recently, new or revised terms and definitions have been balloted directly for inclusion in this standard; these terms have no designation following the definition.
1.5 Almost all of the terms listed are nouns; in other cases, the part of speech is given explicitly immediately following the term.
| ASTM F 1723 : 1996 | Standard Practice for Evaluation of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy |
| ASTM F 1620 : 1996 | Standard Practice for Calibrating a Scanning Surface Inspection System Using Monodisperse Polystyrene Latex Spheres Deposited on Polished or Epitaxial Wafer Surfaces (Withdrawn 2003) |
| ASTM F 1619 : 1995 : R2000 : EDT 1 | Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with <i>p</i>-Polarized Radiation Incident at the Brewster Angle (Withdrawn 2003) |
| ASTM F 1621 : 1996 | Standard Practice for Determining the Positional Accuracy Capabilities of a Scanning Surface Inspection System (Withdrawn 2003) |
| ASTM F 1630 : 2000 | Standard Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities (Withdrawn 2003) |
| ASTM F 1451 : 1992 : R1999 | Standard Test Method for Measuring Sori on Silicon Wafers by Automated Noncontact Scanning (Withdrawn 2003) |
| ASTM F 1708 : 2002 | Standard Practice for Evaluation of Granular Polysilicon by Meter-Zoner Spectroscopies (Withdrawn 2003) |
| ASTM F 2166 : 2002 | Standard Practices for Monitoring Non-Contact Dielectric Characterization Systems Through Use of Special Reference Wafers (Withdrawn 2003) |
| ASTM F 1391 : 1993 : R2000 | Standard Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption (Withdrawn 2003) |
| ASTM F 154 : 2002 | Standard Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces (Withdrawn 2003) |
| ASTM F 1388 : 1992 : R2000 | Standard Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors (Withdrawn 2003) |
| ASTM F 1535 : 2000 | Standard Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance (Withdrawn 2003) |
| ASTM F 1619 : 1995 : R2000 | Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with <i>p</i>-Polarized Radiation Incident at the Brewster Angle |
| SEMI M18 : 2012 | GUIDE FOR DEVELOPING SPECIFICATION FORMS FOR ORDER ENTRY OF SILICON WAFERS |
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