SEMI MF1152 : 2016
Current
Current
The latest, up-to-date edition.
TEST METHOD FOR DIMENSIONS OF NOTCHES ON SILICON WAFERS
Published date
12-01-2013
Sorry this product is not available in your region.
Contains a nondestructive procedure to determine whether or not the dimensions, except for the blend radius, of fiducial notches on silicon wafers fall within specified limits.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (11/2003)
|
| DocumentType |
Standard
|
| PublisherName |
Semiconductor Equipment & Materials Institute
|
| Status |
Current
|
| SEMI M49 : 2016 | GUIDE FOR SPECIFYING GEOMETRY MEASUREMENT SYSTEMS FOR SILICON WAFERS FOR THE 130 NM TO 16 NM TECHNOLOGY GENERATIONS |
| SEMI M76 : 2010 | SPECIFICATION FOR DEVELOPMENTAL 450 MM DIAMETER POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M41 : 2015 | SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER DEVICE/ICS |
| SEMI 3D16 : 2016 | SPECIFICATION FOR GLASS BASE MATERIAL FOR SEMICONDUCTOR PACKAGING |
| SEMI M47 : 2007 | SPECIFICATION FOR SILICON-ON-INSULATOR (SOI) WAFERS FOR CMOS LSI APPLICATIONS |
| SEMI M71 : 2012 | SPECIFICATION FOR SILICON-ON-INSULATOR (SOI) WAFERS FOR CMOS LSI |
| SEMI 3D2 : 2016 | SPECIFICATION FOR GLASS CARRIER WAFERS FOR 3DS-IC APPLICATIONS |
| SEMI M74 : 2008(R2018) | SPECIFICATION FOR 450 MM DIAMETER MECHANICAL HANDLING POLISHED WAFERS |
| SEMI HB1 : 2016 | SPECIFICATION FOR SAPPHIRE WAFERS INTENDED FOR USE FOR MANUFACTURING HIGH BRIGHTNESS-LIGHT EMITTING DIODE DEVICES |
Access your standards online with a subscription
Features
-
Simple online access to standards, technical information and regulations.
-
Critical updates of standards and customisable alerts and notifications.
-
Multi-user online standards collection: secure, flexible and cost effective.