SEMI MF671:2012
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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TEST METHOD FOR MEASURING FLAT LENGTH ON WAFERS OF SILICON AND OTHER ELECTRONIC MATERIALS
Superseded date
17-11-2023
Superseded by
Published date
12-01-2013
Sorry this product is not available in your region.
Covers measuring flat length on wafers of silicon and other electronic materials. Also it's suitable for use in research, development, process control, quality assurance, and materials acceptance applications.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (02/2005)
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| DocumentType |
Revision
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI M3 : 2004 | SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE SAPPHIRE SUBSTRATES |
| SEMI M75 : 2016 | SPECIFICATION FOR POLISHED MONOCRYSTALLINE GALLIUM ANTIMONIDE WAFERS |
| SEMI M23:2023 | Specification for Polished Monocrystalline Indium Phosphide Wafers |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M41 : 2015 | SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER DEVICE/ICS |
| SEMI 3D16 : 2016 | SPECIFICATION FOR GLASS BASE MATERIAL FOR SEMICONDUCTOR PACKAGING |
| SEMI M47 : 2007 | SPECIFICATION FOR SILICON-ON-INSULATOR (SOI) WAFERS FOR CMOS LSI APPLICATIONS |
| SEMI M9 : 2016 | SPECIFICATION FOR POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE WAFERS |
| SEMI M49 : 2016 | GUIDE FOR SPECIFYING GEOMETRY MEASUREMENT SYSTEMS FOR SILICON WAFERS FOR THE 130 NM TO 16 NM TECHNOLOGY GENERATIONS |
| SEMI M79 : 2018 | SPECIFICATION FOR ROUND 100 MM POLISHED MONOCRYSTALLINE GERMANIUM WAFERS FOR SOLAR CELL APPLICATIONS |
| SEMI 3D2 : 2016 | SPECIFICATION FOR GLASS CARRIER WAFERS FOR 3DS-IC APPLICATIONS |
| SEMI M55 : 2017 | SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON CARBIDE WAFERS |
| SEMI M65 : 2016 | SPECIFICATION FOR SAPPHIRE SUBSTRATES TO USE FOR COMPOUND SEMICONDUCTOR EPITAXIAL WAFERS |
| SEMI HB1 : 2016 | SPECIFICATION FOR SAPPHIRE WAFERS INTENDED FOR USE FOR MANUFACTURING HIGH BRIGHTNESS-LIGHT EMITTING DIODE DEVICES |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
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