SEMI MF671:2012
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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TEST METHOD FOR MEASURING FLAT LENGTH ON WAFERS OF SILICON AND OTHER ELECTRONIC MATERIALS
Published date
12-01-2013
Superseded date
17-11-2023
Superseded by
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Covers measuring flat length on wafers of silicon and other electronic materials. Also it's suitable for use in research, development, process control, quality assurance, and materials acceptance applications.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (02/2005)
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| DocumentType |
Revision
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI M3 : 2004 | SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE SAPPHIRE SUBSTRATES |
| SEMI M75 : 2016 | SPECIFICATION FOR POLISHED MONOCRYSTALLINE GALLIUM ANTIMONIDE WAFERS |
| SEMI M23:2023 | Specification for Polished Monocrystalline Indium Phosphide Wafers |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M41 : 2015 | SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER DEVICE/ICS |
| SEMI 3D16 : 2016 | SPECIFICATION FOR GLASS BASE MATERIAL FOR SEMICONDUCTOR PACKAGING |
| SEMI M47 : 2007 | SPECIFICATION FOR SILICON-ON-INSULATOR (SOI) WAFERS FOR CMOS LSI APPLICATIONS |
| SEMI M9 : 2016 | SPECIFICATION FOR POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE WAFERS |
| SEMI M49 : 2016 | GUIDE FOR SPECIFYING GEOMETRY MEASUREMENT SYSTEMS FOR SILICON WAFERS FOR THE 130 NM TO 16 NM TECHNOLOGY GENERATIONS |
| SEMI M79 : 2018 | SPECIFICATION FOR ROUND 100 MM POLISHED MONOCRYSTALLINE GERMANIUM WAFERS FOR SOLAR CELL APPLICATIONS |
| SEMI 3D2 : 2016 | SPECIFICATION FOR GLASS CARRIER WAFERS FOR 3DS-IC APPLICATIONS |
| SEMI M55 : 2017 | SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON CARBIDE WAFERS |
| SEMI M65 : 2016 | SPECIFICATION FOR SAPPHIRE SUBSTRATES TO USE FOR COMPOUND SEMICONDUCTOR EPITAXIAL WAFERS |
| SEMI HB1 : 2016 | SPECIFICATION FOR SAPPHIRE WAFERS INTENDED FOR USE FOR MANUFACTURING HIGH BRIGHTNESS-LIGHT EMITTING DIODE DEVICES |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
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