SEMI MF2074 : 2012 (R2018)
Current
Current
The latest, up-to-date edition.
GUIDE FOR MEASURING DIAMETER OF SILICON AND OTHER SEMICONDUCTOR WAFERS
Available format(s)
Hardcopy
Language(s)
English
Published date
04-08-2018
Important note : Users cannot be edited or removed once added to your Multi user PDF.Provides guidance for Measuring Diameter of Silicon and Other Semiconductor Wafers
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (03/2006)
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| DocumentType |
Revision
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| Pages |
0
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Current
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| SupersededBy |
| SEMI M3 : 2004 | SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE SAPPHIRE SUBSTRATES |
| SEMI MF81 : 2005(R2016) | TEST METHOD FOR MEASURING RADIAL RESISTIVITY VARIATION ON SILICON WAFERS |
| SEMI M49 : 2016 | GUIDE FOR SPECIFYING GEOMETRY MEASUREMENT SYSTEMS FOR SILICON WAFERS FOR THE 130 NM TO 16 NM TECHNOLOGY GENERATIONS |
| SEMI MF1527 : 2007 | GUIDE FOR APPLICATION OF CERTIFIED REFERENCE MATERIALS AND REFERENCE WAFERS FOR CALIBRATION AND CONTROL OF INSTRUMENTS FOR MEASURING RESISTIVITY OF SILICON |
| SEMI M76 : 2010 | SPECIFICATION FOR DEVELOPMENTAL 450 MM DIAMETER POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M41 : 2015 | SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER DEVICE/ICS |
| SEMI M6 : 2008 | SPECIFICATION FOR SILICON WAFERS FOR USE AS PHOTOVOLTAIC SOLAR CELLS |
| SEMI 3D16 : 2016 | SPECIFICATION FOR GLASS BASE MATERIAL FOR SEMICONDUCTOR PACKAGING |
| SEMI MF374 :2012(R2018) | TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE |
| SEMI MF84:2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE |
| SEMI M47 : 2007 | SPECIFICATION FOR SILICON-ON-INSULATOR (SOI) WAFERS FOR CMOS LSI APPLICATIONS |
| SEMI MF43 : 2016 | TEST METHOD FOR RESISTIVITY OF SEMICONDUCTOR MATERIALS |
| SEMI M9 : 2016 | SPECIFICATION FOR POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE WAFERS |
| SEMI M79 : 2018 | SPECIFICATION FOR ROUND 100 MM POLISHED MONOCRYSTALLINE GERMANIUM WAFERS FOR SOLAR CELL APPLICATIONS |
| SEMI 3D2 : 2016 | SPECIFICATION FOR GLASS CARRIER WAFERS FOR 3DS-IC APPLICATIONS |
| SEMI M55 : 2017 | SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON CARBIDE WAFERS |
| SEMI M65 : 2016 | SPECIFICATION FOR SAPPHIRE SUBSTRATES TO USE FOR COMPOUND SEMICONDUCTOR EPITAXIAL WAFERS |
| SEMI HB1 : 2016 | SPECIFICATION FOR SAPPHIRE WAFERS INTENDED FOR USE FOR MANUFACTURING HIGH BRIGHTNESS-LIGHT EMITTING DIODE DEVICES |
| SEMI M20 : 2015 | PRACTICE FOR ESTABLISHING A WAFER COORDINATE SYSTEM |
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