EN 60749-19:2003/A1:2010
Current
The latest, up-to-date edition.
Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength
03-09-2010
Foreword
1 Scope
2 Description of the test apparatus
3 Test method
4 Failure criteria
5 Requirements
6 Categories of separation
7 Summary
Describes the integrity of materials and procedures used to attach semiconductor die to package headers or other substrates (for the purpose of this test method, the term "semiconductor die" should be taken to include passive elements).
Committee |
SR 47
|
DocumentType |
Test Method
|
PublisherName |
European Committee for Standards - Electrical
|
Status |
Current
|
Standards | Relationship |
NF EN 60749-19 : 2003 AMD 1 2011 | Identical |
IEC 60749-19:2003+AMD1:2010 CSV | Identical |
NBN EN 60749-19 : 2004 AMD 1 2010 | Identical |
NEN EN IEC 60749-19 : 2003 AMD 1 2010 | Identical |
I.S. EN 60749-19:2003 | Identical |
PN EN 60749-19 : 2005 AMD 1 2010 | Identical |
SN EN 60749-19 : 2003 | Identical |
CEI EN 60749-19/A1:2011 | Identical |
UNE-EN 60749-19:2003 | Identical |
BS EN 60749-19 : 2003 | Identical |
DIN EN 60749-19:2011-01 | Identical |
BS EN IEC 60938-2:2021 | Identical |
BS EN 60749-19:2003+A1:2010 | Identical |
CEI EN 62047-9 : 2012 | SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 9: WAFER TO WAFER BONDING STRENGTH MEASUREMENT FOR MEMS |
BS EN 62047-9:2011 | Semiconductor devices. Micro-electromechanical devices Wafer to wafer bonding strength measurement for MEMS |
I.S. EN 62047-9:2011 | SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 9: WAFER TO WAFER BONDING STRENGTH MEASUREMENT FOR MEMS |
EN 62047-9:2011 | Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS |
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