I.S. EN 60747-15:2012
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES (IEC 60747-15:2010 (EQV))
Hardcopy , PDF
English
01-01-2012
For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.
Only cited Standards give presumption of conformance to New Approach Directives/Regulations.
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FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Letter symbols
5 Essential ratings (limiting values) and
characteristics
6 Measurement methods
7 Acceptance and reliability
Annex A (informative) - Test method of peak case
non-rupture current
Annex B (informative) - Measuring method of the
thickness of thermal compound paste
Bibliography
Annex ZA (normative) - Normative references to
international publications with their
corresponding European publications
Provides the requirements for isolated power semiconductor devices excluding devices with incorporated control circuits.
| DevelopmentNote |
For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
|
| DocumentType |
Standard
|
| Pages |
31
|
| PublisherName |
National Standards Authority of Ireland
|
| Status |
Current
|
| Standards | Relationship |
| DIN EN 60747-15:2012-08 | Identical |
| NBN EN 60747-15 : 2012 | Identical |
| BS EN 60747-15:2012 | Identical |
| EN 60747-15:2012 | Identical |
| NF EN 60747-15 : 2013 | Identical |
| IEC 60112:2003+AMD1:2009 CSV | Method for the determination of the proof and the comparative tracking indices of solid insulating materials |
| IEC 60270:2000+AMD1:2015 CSV | High-voltage test techniques - Partial discharge measurements |
| IEC 60747-7:2010 | Semiconductor devices - Discrete devices - Part 7: Bipolar transistors |
| IEC 61287-1:2014 | Railway applications - Power converters installed on board rolling stock - Part 1: Characteristics and test methods |
| EN 60749-15:2010/AC:2011 | SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 15: RESISTANCE TO SOLDERING TEMPERATURE FOR THROUGH-HOLE MOUNTED DEVICES |
| IEC 60749-21:2011 | Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability |
| IEC 60749-25:2003 | Semiconductor devices - Mechanical and climatic test methods - Part 25: Temperature cycling |
| IEC 60749-5:2017 | Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test |
| EN 60749-34:2010 | Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling |
| EN 60270:2001/A1:2016 | HIGH-VOLTAGE TEST TECHNIQUES - PARTIAL DISCHARGE MEASUREMENTS (IEC 60270:2000/A1:2015) |
| EN 60749-5:2017 | Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test |
| IEC 60747-9:2007 | Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs) |
| EN 60749-21:2011 | SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 21: SOLDERABILITY |
| IEC 60747-8:2010 | Semiconductor devices - Discrete devices - Part 8: Field-effect transistors |
| IEC 60749-15:2010 | Semiconductor devices - Mechanical and climatic test methods - Part 15: Resistance to soldering temperature for through-hole mounted devices |
| EN 60749-10:2002 | Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock |
| EN 60664-1:2007 | Insulation coordination for equipment within low-voltage systems - Part 1: Principles, requirements and tests |
| IEC 60747-1:2006+AMD1:2010 CSV | Semiconductor devices - Part 1: General |
| IEC 60749-34:2010 | Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling |
| IEC 60749-6:2017 | Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature |
| IEC 60721-3-3:1994+AMD1:1995+AMD2:1996 CSV | Classification of environmental conditions - Part 3-3: Classification of groups of environmental parameters and their severities - Stationary use at weatherprotected locations |
| EN 60749-6:2017 | Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature |
| IEC 60749-10:2002 | Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock |
| IEC 60747-6:2016 | Semiconductor devices - Part 6: Discrete devices - Thyristors |
| EN 60749-25:2003 | Semiconductor devices - Mechanical and climatic test methods - Part 25: Temperature cycling |
| IEC 60664-1:2007 | Insulation coordination for equipment within low-voltage systems - Part 1: Principles, requirements and tests |
| IEC 60747-2:2016 | Semiconductor devices - Part 2: Discrete devices - Rectifier diodes |
| IEC 60749-12:2002 | Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency |
| EN 60749-12:2002 | Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency |
| EN 60721-3-3 : 95 AMD 2 97 | CLASSIFICATION OF ENVIRONMENTAL CONDITIONS - CLASSIFICATION OF GROUPS OF ENVIRONMENTAL PARAMETERS AND THEIR SEVERITIES - STATIONARY USE AT WEATHER-PROTECTED LOCATIONS |
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