IEC 60747-7:2010
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users
25-09-2019
English - French
16-12-2010
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FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Letter symbols
5 Essential ratings and characteristics
6 Measuring methods
7 Acceptance and reliability
Annex A (informative) - Determination of the SOA
IEC 60747-7:2010 gives the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors.
- Small signal transistors (excluding switching and microwave applications);
- Linear power transistors (excluding switching, high-frequency, and microwave applications);
- High-frequency power transistors for amplifier and oscillator applications;
- Switching transistors for high speed switching and power switching applications;
- Resistor biased transistors. The main changes with respect to previous edition are listed below.
a) Clause 1 was amended by adding an item that should be included.
b) Clauses 3, 4, 5, 6 and 7 were amended by adding terms, definitions, suitable additions and deletions those should be included.
c) The text of the second edition was combined with that of IEC 60747-7-5.
This publication is to be read in conjunction with IEC 60747-1:2006.
| Committee |
TC 47/SC 47E
|
| DevelopmentNote |
To be read in conjunction with IEC 60747-1. Supersedes IEC 60747-7-5. (12/2010) Stability Date: 2018. (09/2017) NEW CHILD AMD 1 2019 IS NOW ADDED
|
| DocumentType |
Standard
|
| Pages |
219
|
| ProductNote |
NEW CHILD AMD 1 2019 IS NOW ADDED
|
| PublisherName |
International Electrotechnical Committee
|
| Status |
Superseded
|
| SupersededBy | |
| Supersedes |
| Standards | Relationship |
| NEN IEC 60747-7 : 2011 | Identical |
| BS IEC 60747-7:2010 | Identical |
| IS 14901 : Part 7 : 2020 | Identical |
| BS 6493-1.7:1989 | Identical |
| DIN IEC 60747-7:1997-12 | Identical |
| NFC 96 007 : 1989 | Identical |
| 07/30161967 DC : 0 | BS EN 60747-8 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 8: FIELD-EFFECT TRANSISTORS |
| 14/30311054 DC : 0 | BS EN 60747-4: AMD 1 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 4: MICROWAVE DIODES AND TRANSISTORS |
| CEI EN 60747-15 : 2012 | SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES |
| EN 60747-15:2012 | Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices |
| I.S. EN 60747-15:2012 | SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES (IEC 60747-15:2010 (EQV)) |
| BS IEC 60747-9:2007 | Semiconductor devices. Discrete devices Insulated-gate bipolar transistors (IGBTs) |
| BS EN 60747-16-1 : 2002 | SEMICONDUCTOR DEVICES - PART 16-1: MICROWAVE INTEGRATED CIRCUITS - AMPLIFIERS |
| IEC 60747-9:2007 | Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs) |
| IEC 60747-7-5:2005 | Semiconductor devices - Discrete devices - Part 7-5: Bipolar transistors for power switching applications |
| 07/30162213 DC : 0 | BS EN 60747-15 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES |
| BS IEC 60747-4 : 2007 | SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 4: MICROWAVE DIODES AND TRANSISTORS |
| BS EN 60747-15:2012 | Semiconductor devices. Discrete devices Isolated power semiconductor devices |
| 17/30343732 DC : 0 | BS EN 60747-9 - SEMICONDUCTOR DEVICES - PART 9: DISCRETE DEVICES - INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS) |
| IEC 60747-8-4:2004 | Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications |
| IEC 60747-8:2010 | Semiconductor devices - Discrete devices - Part 8: Field-effect transistors |
| BS 6493-2.3:1987 | Semiconductor devices. Integrated circuits Recommendations for analogue integrated circuits |
| BS IEC 60747-8:2000 | Discrete semiconductor devices and integrated circuits Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors. |
| CEI EN 60747-16-1 : 2009 | SEMICONDUCTOR DEVICES - PART 16-1: MICROWAVE INTEGRATED CIRCUITS - AMPLIFIERS |
| BS IEC 60747-7-5:2005 | Semiconductor devices. Discrete devices Bipolar transistors for power switching applications |
| 14/30311058 DC : 0 | BS EN 60747-16-1:AMD 2 - SEMICONDUCTOR DEVICES - PART 16-1: MICROWAVE INTEGRATED CIRCUITS - AMPLIFIERS |
| 04/30114936 DC : DRAFT JUN 2004 | EN 50439 - RAILWAY APPLICATIONS - RELIABILITY TESTS FOR HIGH POWER SEMICONDUCTORS DEVICES - PART 1: STANDARD BASE-PLATE MODULES |
| IEC 60747-4:2007+AMD1:2017 CSV | Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors |
| IEC 61747-1:1998+AMD1:2003 CSV | Liquid crystal and solid-state display devices - Part 1: Generic specification |
| EN 60747-16-1:2002/A2:2017 | SEMICONDUCTOR DEVICES - PART 16-1: MICROWAVE INTEGRATED CIRCUITS - AMPLIFIERS (IEC 60747-16-1:2001/A2:2017) |
| IEC 60747-15:2010 | Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices |
| IEC 60747-4:2007+AMD1:2017 CSV | Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors |
| IEC 60747-1:2006+AMD1:2010 CSV | Semiconductor devices - Part 1: General |
| IEC 60050-521:2002 | International Electrotechnical Vocabulary (IEV) - Part 521: Semiconductor devices and integrated circuits |
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