SEMI M62 : 2017
Current
Current
The latest, up-to-date edition.
SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS
Published date
12-01-2013
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Specifies examples of silicon epitaxial wafer requirements for both discrete semiconductor device manufacture and integrated circuit device manufacture.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. Supersedes SEMI M2 & SEMI M11. (10/2005)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Current
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| Supersedes |
| SEMI M17 : 2010(R2015) | GUIDE FOR A UNIVERSAL WAFER GRID |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M41 : 2015 | SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER DEVICE/ICS |
| SEMI M71 : 2012 | SPECIFICATION FOR SILICON-ON-INSULATOR (SOI) WAFERS FOR CMOS LSI |
| SEMI M18 : 2012 | GUIDE FOR DEVELOPING SPECIFICATION FORMS FOR ORDER ENTRY OF SILICON WAFERS |
| SEMI M49 : 2016 | GUIDE FOR SPECIFYING GEOMETRY MEASUREMENT SYSTEMS FOR SILICON WAFERS FOR THE 130 NM TO 16 NM TECHNOLOGY GENERATIONS |
| SEMI M32 : 2007 | GUIDE TO STATISTICAL SPECIFICATIONS |
| SEMI MF1726 : 2010(R2015) | PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON WAFERS |
| SEMI M35 : 2014 | GUIDE FOR DEVELOPING SPECIFICATIONS FOR SILICON WAFER SURFACE FEATURES DETECTED BY AUTOMATED INSPECTION |
| SEMI M33 : 1998 | TEST METHOD FOR THE DETERMINATION OF RESIDUAL SURFACE CONTAMINATION ON SILICON WAFERS BY MEANS OF TOTAL REFLECTION X-RAY FLUORESCENCE SPECTROSCOPY (TXRF) |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI M17 : 2010(R2015) | GUIDE FOR A UNIVERSAL WAFER GRID |
| SEMI M44 : 2005(R2011) | GUIDE TO CONVERSION FACTORS FOR INTERSTITIAL OXYGEN IN SILICON |
| SEMI MF723 : 2007E(R2012)E | PRACTICE FOR CONVERSION BETWEEN RESISTIVITY AND DOPANT OR CARRIER DENSITY FOR BORON-DOPED, PHOSPHOROUS-DOPED, AND ARSENIC-DOPED SILICON |
| SEMI M45 : 2010(R2017) | SPECIFICATION FOR 300 MM WAFER SHIPPING SYSTEM |
| SEMI M18 : 2012 | GUIDE FOR DEVELOPING SPECIFICATION FORMS FOR ORDER ENTRY OF SILICON WAFERS |
| SEMI MF1617 : 2004(R2016) | TEST METHOD FOR MEASURING SURFACE SODIUM, ALUMINUM, POTASSIUM, AND IRON ON SILICON AND EPI SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY |
| SEMI MF1392:2007 | TEST METHOD FOR DETERMINING NET CARRIER DENSITY PROFILES IN SILICON WAFERS BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY PROBE |
| SEMI MF1530 : 2007(R2018) | TEST METHOD FOR MEASURING FLATNESS, THICKNESS, AND TOTAL THICKNESS VARIATION ON SILICON WAFERS BY AUTOMATED NON-CONTACT SCANNING |
| SEMI MF534 : 2007 | TEST METHOD FOR BOW OF SILICON WAFERS |
| SEMI MF1451:2007(R2019) | TEST METHOD FOR MEASURING SORI ON SILICON WAFERS BY AUTOMATED NON-CONTACT SCANNING |
| SEMI M78 : 2010 | GUIDE FOR DETERMINING NANOTOPOGRAPHY OF UNPATTERNED SILICON WAFERS FOR THE 130 NM TO 22 NM GENERATIONS IN HIGH VOLUME MANUFACTURING |
| SEMI T3 : 2013 | SPECIFICATION FOR WAFER BOX LABELS |
| SEMI MF95 : 2007(R2018) | TEST METHOD FOR THICKNESS OF LIGHTLY DOPED SILICON EPITAXIAL LAYERS ON HEAVILY DOPED SILICON SUBSTRATES USING AN INFRARED DISPERSIVE SPECTROPHOTOMETER |
| SEMI MF374 :2012(R2018) | TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE |
| SEMI MF110 : 2007(R2018) | TEST METHOD FOR THICKNESS OF EPITAXIAL OR DIFFUSED LAYERS IN SILICON BY THE ANGLE LAPPING AND STAINING TECHNIQUE |
| SEMI MF398 : 1992(R2002) | TEST METHOD FOR MAJORITY CARRIER CONCENTRATION IN SEMICONDUCTORS BY MEASUREMENT OF WAVENUMBER OR WAVELENGTH OF THE PLASMA RESONANCE MINIMUM |
| SEMI MF525 : 2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE |
| SEMI MF657 : 2007E | TEST METHOD FOR MEASURING WARP AND TOTAL THICKNESS VARIATION ON SILICON WAFERS BY NONCONTRAST SCANNING |
| SEMI MF154 : 2005(R2016) | GUIDE FOR IDENTIFICATION OF STRUCTURES AND CONTAMINANTS SEEN ON SPECULAR SILICON SURFACES |
| SEMI MF672 : 2007 | TEST METHOD FOR MEASURING RESISTIVITY PROFILES PERPENDICULAR TO THE SURFACE OF A SILICON WAFER USING A SPREADING RESISTANCE PROBE |
| SEMI MF523 : 2007(R2018) | PRACTICE FOR UNAIDED VISUAL INSPECTION OF POLISHED SILICON WAFER SURFACES |
| SEMI T7 : 2016 | SPECIFICATION FOR BACK SURFACE MARKING OF DOUBLE-SIDE POLISHED WAFERS WITH A TWO-DIMENSIONAL MATRIX CODE SYMBOL |
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