MIL-STD-750 Revision F:2011
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TEST METHODS FOR SEMICONDUCTOR DEVICES
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FOREWORD
SUMMARY OF CHANGE 1 MODIFICATIONS
1. SCOPE
2. APPLICABLE DOCUMENTS
3. DEFINITIONS
4. GENERAL REQUIREMENTS
5. DETAILED REQUIREMENTS
6. NOTES
CONCLUDING MATERIAL
Determines uniform methods and procedures for testing semiconductor devices suitable for use within Military and Aerospace electronic systems.
| Committee |
FSC 5961
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| DocumentType |
Standard
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| Pages |
19
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| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Current
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| MIL-PRF-19500-426 Revision J:2016 | TRANSISTOR, PNP, SILICON, AMPLIFIER TYPE 2N4957, JAN, JANTX, JANTXV, JANS, JANHC, JANKC |
| MIL S 19500/485 : E | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N5415, TX2N5415, 2N5416 AND TX2N5416 |
| MIL-PRF-32140 Base Document:2004 | RELAYS, ELECTROMAGNETIC, RADIO FREQUENCY, ESTABLISHED RELIABILITY, - GENERAL SPECIFICATION FOR |
| MIL-PRF-19500-676 Revision F:2014 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES, JANTXVR AND JANSR |
| MIL-PRF-19500-741 Revision A:2009 | TRANSISTOR, DIE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC |
| BS EN 16602-60-15:2014 | Space product assurance. Radiation hardness assurance. EEE components |
| MIL-S-19500-414 Revision B:1983 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N5241, JAN, JANTX & JANTXV |
| MIL-S-63335 Revision C:1985 | SAFETY AND ARMING DEVICE, GUIDED MISSILE: M143 ELECTRICAL PARTS AND ASSEMBLIES FOR |
| I.S. EN 16602-60-13:2015 | SPACE PRODUCT ASSURANCE - REQUIREMENTS FOR THE USE OF COTS COMPONENTS |
| 18/30373170 DC : 0 | BS EN 62668-2 - PROCESS MANAGEMENT FOR AVIONICS - COUNTERFEIT PREVENTION - PART 2: MANAGING ELECTRONIC COMPONENTS FROM NON-FRANCHISED SOURCES |
| MIL-STD-1580 Revision B:2003 | DESTRUCTIVE PHYSICAL ANALYSIS FOR ELECTRONIC, ELECTROMAGNETIC, AND ELECTROMECHANICAL PARTS |
| DOD-STD-2000-4 Revision A:1987 | GENERAL PURPOSE SOLDERING REQUIREMENT FOR ELECTRICAL AND ELECTRONIC EQUIPMENT |
| DSCC 85092 : G | RELAYS, SOLID STATE, OPTICALLY ISOLATED, HERMETICALLY SEALED, ANALOG SIGNAL SWITCHING, SPST (N.O.), CMOS AND TTL CONTROL INPUTS |
| GEIA TA HB 0009 : 2013 | RELIABILITY PROGRAM HANDBOOK |
| MIL H 38534 : B (1) | HYBRID MICROCIRCUITS, GENERAL SPECIFICATION FOR |
| MIL S 19500/518 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N3766, 2N3767 JAN, JANTX, AND JANTXV |
| MIL S 19500/627 : 1994 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6688, 1N6689, 1N6688US, AND 1N6689US, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-645 Revision D:2013 | Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6772, 1N6773, 1N6772R and 1N6773R JAN, JANTX, JANTXV, and JANS |
| CEI 56-44 : 2000 | DEPENDABILITY MANAGEMENT - PART 3-7: APPLICATION GUIDE - RELIABILITY STRESS SCREENING OF ELECTRONIC HARDWARE |
| MIL-P-70661 Base Document:1987 | POTTED CIRCUIT CARD ASSEMBLY FOR TOW-2E/6 PROBE AND S&A ASSEMBLY |
| MIL-PRF-19500-6 Revision C:1999 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER, TYPES 2N43AZ1, 2N43AZ2, 2N44AZ1 AND 2N44AZ2 |
| MIL-PRF-19500-754 Revision A:2015 | Semiconductor Device, Diode, Silicon, Schottky, Dual Diode, Common Cathode, Device Type 1N7064, Surface Mount Package, Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-366 Revision R:2015 | Transistor, NPN, Radiation Hardened, Silicon, Amplifier, Types 2N3498, 2N3499, 2N3500, 2N3501, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC |
| MIL-PRF-19500-610 Revision F:2014 | SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 AND 1N6677UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL S 19500/368 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N3439, TX2N3439, 2N3440 AND TX2N3440 |
| MIL-S-19500-200 Revision B:1989 | SEMICONDUCTOR DEVICE, DIODE, GERMANIUM TYPE 1N270 JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-661 Revision F:2017 | TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392, JANTXVR AND JANSR |
| MIL S 19500/539 : A (1) | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN SILICON, POWER TYPES 2N6300, 2NN6301, JAN, TX AND TXV |
| MIL S 19500/144 : H (1) | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N3064, 1N4454-1, AND 1N4532 JAN, JANTX, AND JANTXV |
| MIL S 19500/589 : 0 | SEMICONDUCTOR DEVICE, INSULATED GATE, BIPOLAR TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7366 & 2N7367, JANTX, JANTXV & JANS |
| MIL S 19500/435 : D | SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES 1N4099-1, 1N4099C-1, 1N4099D-1 THROUGH 1N4135-1, 1N4135C-1, 1N4135D-1, 1N4614-1, 1N4614C-1, 1N4614D-1 THROUGH 1N4627-1, 1N4627C-1, 1N4627D-1, 1N4099UR-1,1N4099CUR-1, 1N4099DUR-1 THROUGH 1N4135UR-1, 1N4135CUR-1, 1N4135DUR-1, 1N4614UR-1, 1N4614CUR-1, 1N4614DUR-1 THRU 1N4627UR-1, 1N4627CUR-1 |
| MIL-PRF-19500-427 Revision P:2013 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-756 Revision A:2014 | Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Through Hole and Surface Mount, Types 2N7606 and 2N7607 Quality Levels JANTXV and JANS |
| MIL S 19500/308 : B | SEMICONDUCTOR DEVICE, DIODE, SILICON POWER RECTIFIER, FAST RECOVERY TX AND NON TX TYPES 1N3909, 1N3910, 1N3911, 1N3912, 1N3913, 1N3909R, 1N3910R, 1N3911R, 1N3912R, AND 1N3912R |
| MIL S 19500/522 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY DEVICE TYPES - JAN 2N6603 & TXV 2N6603, JAN 2N6604 & TXV 2N6604 |
| MIL S 19500/448 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPE 2N4405 JANTX |
| MIL-S-19500-66 Revision B:1968 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPE 2N422 |
| MIL S 19500/566 : A (3) | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON LOGIC-LEVEL, TYPES 2N6902 AND 2N6904, JANTX, JANTXV AND JANS |
| MIL S 19500/406 : C | SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N4460 THRU 1N4496 AND 1N6485 THRU 1N6491 JAN, JANTX, JANTXV AND JANS |
| MIL-PRF-19500-231 Revision R:2015 | Semiconductor Device, Diode, Switching, Silicon, Types 1N4150and 1N3600, Quality Levels JAN, JANTX, JANTXV, JANHCand JANKC |
| MIL-PRF-19500-158 Revision T:2009 | SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N3154-1, THROUGH 1N3157-1, AND 1N3154UR-1 THROUGH 1N3157UR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H |
| MIL-PRF-19500-563 Revision G:2012 | Transistor, Field Effect, P-Channel, Silicon, Types 2N6845 and 2N6847,JAN, JANTX, JANTXV, JANS, JANHC, and JANKC |
| MIL-PRF-19500-542 Revision K:2017 | TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-488 Revision E:2008 | Transistor, NPN, Silicon, High-Power, Types 2N5671 and 2N5672, Case Mount Through Hole, Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-582 Revision C:2015 | Transistor, PNP, Silicon Amplifier, Types 2N5679and 2N5680, JAN, JANTX, JANTXV, JANHCand JANKC |
| MIL-PRF-19500-706 Revision C:2015 | TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7497T2, 2N7498T2, 2N7499T2, AND 2N7561T2 JANTXVR AND JANSR |
| MIL-PRF-19500-411 Revision T:2016 | Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Encapsulated (Through-Hole and Surface Mount Packages), and Un-Encapsulated, Device Types 1N5415 Through 1N5420, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC and JANKC |
| MIL-STD-750-3 Base Document:2012 | Transistor Electrical Test Methods for Semiconductor Devices Part 3: Test Methods 3000 Through 3999 |
| MIL S 19500/496 : A | SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, PNP, SILICON TYPES 2N5795, 2N5796, AND 2N5796U, JANTX AND JANTXV |
| MIL S 19500/356 : D | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N4954 THROUGH 1N4996, 1N5968 AND 1N5969 JAN, JANTX, JANTXV AND JANS |
| MIL-STD-989 Base Document:1991 | CERTIFICATION REQUIREMENTS FOR JAN SEMICONDUCTOR DEVICES |
| MIL-PRF-19500-368 Revision M:2013 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3439U4, 2N3440, 2N3440L, 2N3440UA, AND 2N3440U4, JAN, JANTX, JANTXV, JANS, JANHCB, JANKCB, JANHCC, JANKCC JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH |
| MIL-PRF-19500-604 Revision B:2004 | Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7272, 2N7275, 2N7278,and 2N7281, JANTXV, andJANS (No S/S Document) |
| MIL S 19500/559 : B | SEMICONDUCTOR DEVICE, NPN, SILICON, SWITCHING, FOUR TRANSISTOR, ARRAY TYPE M19500/559-01, -02, JAN, JANTX AND JANTXV |
| MIL-STD-1546 Revision B:1992 | PARTS, MATERIALS, AND PROCESSES CONTROL PROGRAM FOR SPACE AND LAUNCH VEHICLES |
| MIL-S-19500-155 Revision E:1974 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENERAL PURPOSE TYPES 1N3189, 1N3190, 1N3191, TX AND NON-TX TYPES |
| MIL S 19500/415 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE JAN2N2812, JANTX2N2812, JAN2N2814, JANTX2N2814 |
| MIL S 19500/543 : D (1) | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768, 2N6770, JANTX, JANTXV AND JANS |
| MIL S 19500/116 : J | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N914, 1N4148-1 AND 1N4531 JANTX, JANTXV AND JANS |
| MIL-R-28750-6 Revision G:2014 | RELAY, SOLID STATE, HERMETICALLY SEALED, ISOLATED, 250 MA, 40 V DC, SIGNAL SWITCHING, SPST (N.O.) |
| MIL S 19500/605 : (1) | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, & 2N7298 JANTXVM, D, R, H & JANSM, D & R |
| MIL-S-19500-230 Revision C:1965 | SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207 |
| MIL S 19500/581 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER, TYPES JANTX AND JANTXV 2N4237, 2N4238 AND 2N4239 |
| MIL S 19500/391 : C (2) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N3019, 2N3019S, 2N3057A & 2N3700 JANTX, JANTXV, AND JANS |
| DSCC 85145 : E | RELAYS, SOLID STATE, OPTICALLY ISOLATED, HERMETICALLY SEALED, 240 MILLIAMPERES, +/-100 V DC BIDIRECTIONAL, ANALOG SIGNAL SWITCHING, SPST (N.O.), CMOS AND TTL CONTROL INPUTS |
| MIL S 19500/538 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6676, 2N6678, 2N6691 AND 2N6693 JAN, JANTX AND JANTXV |
| MIL-PRF-19500-181 Revision J:2011 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N718A, 2N1613, AND 2N1613L, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-162 Revision E:2014 | SEMICONDUCTOR DEVICES, DIODE, SILICON, POWER RECTIFIER, TYPES 1N1614, 1N1615, 1N1616, 1N4458, 1N4459, 1N1614R, 1N1615R, 1N1616R, 1N4458R, 1N4459R, JAN AND JANTX |
| MIL-PRF-19500-403 Revision A:2016 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, AXIAL LEADED PACKAGE, TYPE 1N4500, QUALITY LEVELS JAN AND JANTX |
| MIL S 19500/542 : E | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6758, 2N6760, 2N6762, JANTX, JANTXV AND JANS |
| MIL-PRF-19500-631 Revision B:2004 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7395, 2N7396, 2N7397, AND 2N7398, JANSD AND JANSR |
| MIL-PRF-19500-702 Revision E:2016 | TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7482, 2N7483, AND 2N7484, JANTXVR, F, G, AND H AND JANSR, F, G, AND H |
| MIL-E-63300 Revision A:1981 | ELECTRONIC ASSEMBLY FOR MINE, ANTIPERSONNEL, HE, M74 |
| MIL-PRF-19500-641 Base Document:1997 | SEMICONDUCTOR DEVICE, DIODE, GALLIUM ARSENIDE, POWER RECTIFIER, TYPE 1N6757 JANTX, JANTXV AND JANS |
| MIL-PRF-19500-629 Revision C:2004 | SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N6702 AND 1N6702US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-639 Revision A:1998 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7411 JANSD AND JANSR |
| MIL S 19500/297 : B | SEMICONDUCTOR DEVICE, DIODE, SILICON POWER RECTIFIER TX AND NON TX TYPES 1N1184, 1N1186, 1N1188, 1N1190, 1N3766, 1N3768, 1N1184R, 1N1186R, 1N1188R, 1N1190R, 1N3766R, AND 1N3768R |
| MIL-PRF-19500-765 Revision B:2016 | Semiconductor Device, Diode, Silicon, Dual Schottky, Common Cathode, Encapsulated (Through-Hole and Surface Mount), Type 1N7072 and 1N7078 Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-478 Revision L:2017 | DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, TYPES 1N5812, 1N5814, 1N5816, AND R VERSIONS, JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS |
| MIL-PRF-19500-577 Revision D:2016 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, AXIAL LEAD, TYPES 1N6528 THROUGH 1N6535, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-270 Revision K:2016 | TRANSISTOR, UNITIZED, DUAL, NPN, SILICON THROUGH HOLE MOUNT PACKAGE, TYPE 2N2060 QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-476 Revision F:2013 | Transistor, Field Effect, P-Channel, Silicon, Types 2N5114 Through 2N5116, JAN, JANTX, and JANTXV |
| MIL-PRF-19500-500 Revision F:2017 | Semiconductor Device, Diode, Silicon, Unipolar Transient Voltage Suppressor, Types 1N5555 Through 1N5558, 1N5907, 1N5629 Through 1N5665, JAN, JANTX, and JANTXV |
| MIL-PRF-19500-355 Revision V:2016 | Transistor, Unitized Dual, NPN, Silicon, Types 2N2919, 2N2920, JAN, JANTX, JANTXV, JANS, JANHC and JANKC |
| MIL-PRF-19500-621 Revision D:2014 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER, TYPE 2N7369, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-759 Revision A:2012 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) DUAL TRANSISTOR, N-CHANNEL AND P-CHANNEL, LOGIC-LEVEL SILICON TYPES 2N7632UD, JANTXVR, F, AND JANSR, F |
| MIL-PRF-19500-570 Revision F:2015 | TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON LOGIC-LEVEL, TYPES 2N6901 AND 2N6903, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-761 Revision A:2015 | Semiconductor Device, Diode, Silicon, Schottky, Type 1N7069, Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-454 Revision J:2012 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N5660, 2N5660U3, 2N5661, 2N5661U3, 2N5662, AND 2N5663, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-448 Revision F:2013 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER, TYPE 2N4405, 2N4405UA, AND 2N4405UB, JAN AND JANTX |
| MIL-PRF-19500-485 Revision N:2013 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA, AND 2N5416U4, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANHCD, JANKCB, JANKCD, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH |
| MIL-PRF-19500-575 Revision F:2016 | Semiconductor Device, Diode, Silicon, High Voltage Power Rectifier, Fast Recovery, Axial Leaded and Surface Mount, Types 1N6512 Through 1N6519, Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL-DTL-19491 Revision J:2014 | SEMICONDUCTOR DEVICES, PACKAGING OF |
| MIL-PRF-39016-20 Revision J:2004 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, DPDT, LOW LEVEL TO 1.0 AMPERE WITH INTERNAL DIODES FOR COIL TRANSIENT SUPPRESSION AND POLARITY REVERSAL PROTECTION |
| IEC 60300-3-7:1999 | Dependability management - Part 3-7: Application guide - Reliability stress screening of electronic hardware |
| SAE AS6081 | Fraudulent/Counterfeit Electronic Parts: Avoidance, Detection, Mitigation, and Disposition - Distributors |
| MIL-STD-883 Revision K:2016 | TEST METHOD STANDARD - MICROCIRCUITS |
| MIL-M-50276-14 Base Document:1969 | MODULE ASSEMBLY (DIODE) |
| MIL-STD-2000 Revision A:1991 | STANDARD REQUIREMENTS FOR SOLDERED ELECTRICAL AND ELECTRONIC ASSEMBLIES |
| DSCC 17202B:2022 | Microcircuit, Hybrid, Linear, Single Channel, DC-DC Converter |
| DSCC 01038C:2022 | SEMICONDUCTOR DEVICE, DIODE, SILICON PIN DIODE, TYPE 1N5719 |
| MIL STD 750-2 : A | MECHANICAL TEST METHODS FOR SEMICONDUCTOR DEVICES - PART 2: TEST METHODS 2001 THROUGH 2999 |
| MIL-M-50276 Base Document:1969 | MODULE GENERAL SPECIFICATION FOR |
| MIL STD 11991 : A | GENERAL STANDARD FOR PARTS, MATERIALS, AND PROCESSES |
| MIL S 19500/162 : B | SEMICONDUCTOR DEVICES, DIODE, SILICON, POWER RECTIFIER JAN TYPES 1N1614, 1N1615, 1N1616, 1N4458, 1N4459, 1N1614R, 1N1615R, 1N1616R, 1N4458R, 1N4459R |
| MIL S 19500/540 : A | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER TYPES 2N6298, 2N6299, JAN, TX AND TXV |
| MIL S 19500/602 : A | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7265, 2N7266 & 2N7267 JANTXVM, D, R, H & JANSM, D, R, H |
| MIL-E-29581 Base Document:1991 | EARCUP, UNIT ACTIVE NOISE REDUCTION SYSTEM |
| MIL S 19500/474 : D | SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS, TYPES 1N5768, 1N5772, 1N5774, 1N6100, 1N6101, IN6496, 1N6506, 1N6507, 1N6508, 1N6509, 1N6510, 1N6511, JAN, JANTX, JANTXV AND JANS |
| SAE AS6171/4 | Techniques for Suspect/Counterfeit EEE Parts Detection by Delid/Decapsulation Physical Analysis Test Methods |
| DSCC 99003 : B | SEMICONDUCTOR DEVICE, THYRISTOR, REVERSE BLOCKING, SILICON, TYPES 2N1792 AND 2N1910 FAMILIES |
| MIL S 19500/520 : B | SEMICONDUCTOR DEVICES, DIODE, LIGHT EMITTING, YELLOW TYPES, CLEAR LENS AND PANEL MOUNT ASSEMBLY TYPES |
| MIL-PRF-28750-9 Revision G:2015 | RELAY, SOLID-STATE, HERMETICALLY SEALED, CLASS 2, OPTICALLY ISOLATED, ZERO VOLTAGE TURN-ON, 1 AMPERE (2 AMPERES WITH HEAT SINK), 400 HZ, POWER SWITCHING, SPST (N.O.) |
| MIL-PRF-19500-508 Revision E:2016 | TRANSISTOR, PNP, SILICON, POWER, ENCAPSULATED (THROUGH-HOLE MOUNT PACKAGE), TYPES 2N6437 AND 2N6438, JAN, JANTX, AND JANTXV |
| MIL-E-48630 Base Document:1986 | ELECTRONIC ASSEMBLY, FOR MINES, M718A1/M741A1, SYSTEM |
| MIL S 19500/516 : B | SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6102 - IN 6137, 1N6102A - 1N6137A, 1N6138 - 1N6173, 1N6138A - 1N6173A |
| MIL-PRF-19500-379 Revision K:2015 | Transistor, PNP, Silicon, High-Power, Encapsulated (Through Hole), Device Types 2N3791 and 2N3792, Quality Levels: JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-671 Revision A:2012 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY POWER RECTIFIER, COMMON CATHODE OR ANODE CENTER TAP, TYPES 1N6828, 1N6828R, 1N6833, 1N6833R, 1N6828U3, AND 1N6833U3, JAN, JANTX, JANTXV, AND JANS |
| 11/30250232 DC : 0 | BS EN 60749-26 - SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 26: ELECTROSTATIC DISCHARGE (ESD) SENSITIVITY TESTING - HUMAN BODY MODEL (HBM) |
| MIL S 19500/413 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N3771 AND 2N3772, JAN, JANTX, AND JANTXV |
| MIL S 19500/609 : A (1) | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING |
| MIL S 19500/337 : F | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N4153, 1N4153-1, AND 1N4534, JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/407 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N3055 AND TX2N3055 |
| MIL S 19500/375 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3822, 2N3823 JANTX, JANTXV AND JANS |
| MIL S 19500/564 : D | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6849 AND 2N6851, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL S 19500/158 : K | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TYPES 1N3154 THROUGH 1N3157, -1 JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/315 : E | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N2880, 2N3749, JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/420 : D | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, GENERAL PURPOSE TYPES 1N5550 TO N5554 JAN, JANTX, JANTXV, AND JANS |
| MIL-S-19500-71 Revision D:1967 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N1195 |
| MIL-PRF-19500-562 Revision E:2010 | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6804 AND 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-599 Revision E:2014 | Transistor, Quad, Field Effect, P-Channel, Silicon, 14-Pin Dual Inline Package, Type 2N7335, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC |
| MIL-E-63399 Revision B:1981 | ELECTRONICS-MCD ASSEMBLY FOR MINE, ANTITANK: HE, M75 |
| MIL-S-19500-135 Revision A:1968 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPE 2N695 |
| MIL S 19500/464 : B (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER TYPES 2N5685 AND 2N5685 AND 2N5686, JANTX AND JANTXV |
| MIL S 19500/132 : A | SEMICONDUCTOR DEVICE DIODE,SILICON SWITCHING TYPE 1N691 |
| MIL-S-19500-128 Revision A:1965 | SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER TYPES JAN-1N26B, JAN-1N26BR, JAN-1N26BM, AND JAN-1N26BMR |
| MIL-PRF-39016-18 Revision H:2005 | Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 1 Ampere with Internal Diode for Coil Transient Suppression, Terminals 0.100-Inch Grid Pattern |
| MIL-PRF-19500-114 Revision J:2016 | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, CASE MOUNT THROUGH HOLE PACKAGE, STANDARD AND REVERSE POLARITY, TYPES 1N2804 THROUGH 1N2811, 1N2813, 1N2814, 1N2816,1N2818 THROUGH 1N2820, 1N2822 THROUGH 1N2827, 1N2829, 1N2831 THROUGH 1N2838, 1N2840 THROUGH 1N2846, AND 1N4557 THROUGH 1N4562, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-664 Revision F:2017 | TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H |
| MIL-PRF-19500-602 Revision B:1997 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7265, 2N7266, AND 2N7267 JANTXVM, D,R,F,G, AND H AND JANSM, D,R,F,G, AND H |
| MIL-PRF-19500-659 Revision A:2014 | Semiconductor Device, Field Effect Radiation Hardened Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR |
| MIL-PRF-19500-297 Revision J:2014 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N1184, 1N1186, 1N1188, 1N1190, 1N3766, 1N3768, 1N1184R, 1N1186R, 1N1188R, 1N1190R, 1N3766R, 1N3768R, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-721 Revision C:2013 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6892UTK1, 1N6893UTK1, 1N6894UTK1, 1N6895UTK1, 1N6892UTK1CS, 1N6893UTK1CS, 1N6894UTK1CS, 1N6895UTK1CS, 1N6892UTK1AS, 1N6893UTK1AS, 1N6894UTK1AS, AND 1N6895UTK1AS JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-540 Revision G:2015 | TRANSISTOR, DARLINGTON, PNP SILICON, POWER, DEVICE TYPES 2N6298 AND 2N6299, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-642 Revision D:2007 | Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Case Mount Through Hole Package, Standard and Reverse Polarity, Types 1N6762 Through 1N6765, Quality LevelsJAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-516 Revision G:2016 | Semiconductor Device, Diode, Silicon, Bipolar Transient Voltage Suppressor, Encapsulated (Through-Hole and Surface Mount Packages) and Un-Encapsulated Types 1N6102 Through 1N6173, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC |
| MIL-PRF-19500-392 Revision K:2017 | TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N3485 AND 2N3486, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-472 Revision F:2012 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON, TYPES 2N6350, 2N6351, 2N6352, AND 2N6353, JAN, JANTX, JANTXV, AND JANHC |
| MIL-PRF-19500-678 Revision C:2015 | RECTIFIER, SEMICONDUCTOR DEVICE, SILICON, DUAL SCHOTTKY CENTER TAP, FOR POWER APPLICATIONS, SURFACE MOUNT, TYPES 1N6840 AND 1N6841, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-662 Revision F:2013 | SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F |
| MIL-PRF-19500-523 Revision D:2012 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N6383, 2N6384, 2N6385, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-589 Revision A:1998 | SEMICONDUCTOR DEVICE, TRANSISTOR, INSULATED GATE, BIPOLAR N-CHANNEL, SILICON TYPES 2N7367 AND 2N7368 JAN, JANTX, JANTXV AND JANS |
| MIL-PRF-19500-394 Revision P:2015 | TRANSISTOR, NPN, SILICON, POWER SWITCHING, TYPES: 2N4150, 2N5237, 2N5238, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL PRF 19500/421 : J | TRANSISTOR, DUAL, UNITIZED, NPN/PNP, COMPLEMENTARY, SILICON, TYPES 2N3838, 2N4854, AND 2N4854U, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-573 Revision C:2012 | Semiconductor Device, Transistor, PNP, Silicon, Switching Types 2N4209, JAN, JANTX, JANTXV, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHC, JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, and JANKCH (... |
| MIL-PRF-19500-291 Revision W:2016 | Transistor, PNP, Silicon, Switching, Device Types 2N2906A and2N2907A, Encapsulated (Through Holeand Surface Mount Packages)and Unencapsulated, Radiation Hardness Assurance, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, andJANKC |
| MIL-PRF-19500-668 Base Document:1999 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7462U1 JANSD, -R |
| MIL-PRF-19500-675 Revision F:2018 | TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON TYPES 2N7463, 2N7464, JANTXVR AND JANSR |
| MIL-PRF-19500-406 Revision M:2015 | RECTIFIER, SEMICONDUCTOR DEVICE, SILICON, VOLTAGE REGULATOR, ENCAPSULATED THROUGH-HOLE AND SURFACE MOUNT PACKAGES, DEVICE TYPES 1N4460 THROUGH 1N4496, AND 1N6485 THROUGH 1N6491, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/576 : A (2) | SEMICONDUCTOR DEVICE, DIODE, SILICONE, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, TYPES 1N6520 THROUGH 1N6527, 1N6520US THROUGH 1N6527US JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-646 Revision E:2008 | Semiconductor Device, Diode, Silicon, Power Rectifier, Ultrafast, Types 1N6774 Through 1N6777, JAN, JANTX, JANTXV, and JANS |
| MIL S 19500/177 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP SILICON LOW POWER TYPES 2N1131 AND 2N1132 |
| MIL S 19500/621 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER TYPE 2N7369 JANTX, JANTXV & JANS |
| MIL S 19500/181 : E (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON LOW POWER TYPES 2N718A,2N1613, AND 2N1613L JAN JANTX AND JANTXV |
| MIL-S-19500-517 Base Document:1977 | SEMICONDUCTOR DEVICE, SILICON, DIODE ARRAY, TYPE 1N6101 JAN, JANTX, AND JANTXV |
| MIL S 19500/384 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON HIGH-POWER TYPES 2N3584, 2N3585, JANTX AND JANTXV |
| MIL-S-19500-136 Revision A:1969 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, GERMANIUM, LOW POWER TYPE 2N1310 |
| MIL S 19500/444 : C (1) | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPE 1N5711 JAN, JANTX, JANTXV, AND JANS. |
| MIL-R-28750-7 Revision F:2014 | Relay, Solid State, Hermetically Sealed, Isolated, 100 MA, 250 V DC, Signal Switching, SPST (N. O.) (No S/S Document) |
| MIL S 19500/606 : 1992 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7291, 2N7293, 2N7295 & 2N7297 JANTXVM, D, R & JANSM, D & R |
| MIL-S-19500-178 Revision B:1964 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPE 2N1165 |
| MIL-S-19500-493 Revision A:1990 | SEMICONDUCTOR DEVICE, PNPN, THYRISTOR, SILICON, (PROGRAMMABLE UNIJUNCTION TRANSISTOR), TYPES: 2N6116, 2N6117, 2N6118, 2N6137, 2N6138, JAN, JANTX, AND JANTXV |
| MIL-S-19500-217 Revision B:1972 | SEMICONDUCTOR DEVICE, TRANSISTORS, PNP, GERMANIUM, HIGH-POWER TYPES 2N456B, 2N457B, 2N458B, 2N1021A, 2N1022A |
| MIL S 19500/114 : E | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR B AND RB TYPES, 1N2804 THRU 1N2811, 1N2813, 1N2816, 1N2818 THRU 1N2820, 1N2822 THRU 1N2827, 1N2829, 1N2831 THRU 1N2838, 1N2840 THRU 1N2846 |
| MIL S 19500/270 : E | SEMICONDUCTOR DEVICE, UNITIZED, DUAL TRANSISTOR NPN SILICON TYPES 2N2060 AND 2N2060L JAN ANTX JANTXV AND JANS |
| MIL S 19500/557 : E | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6798, 2N6800 AND 2N6802, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL S 19500/260 : D | SEMICONDUCTOR DEVICE, DIODE, SILICON POWER RECTIFIER |
| MIL-S-19500-183 Revision A:1965 | SEMICONDUCTOR DEVICE, DIODE, SILICON RF MIXER TYPE JAN-1N25WA |
| MIL S 19500/357 : D (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER TYPES 2N3634 TO 2N3637, 2N3634L TO 2N3637L JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/225 : E | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON TYPES 2N1711, TX2N1711, 2N1890 AND TX 2N1890 |
| MIL-S-19500-63 Revision D:1972 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, GERMANIUM, LOW POWER TYPE 2N358A |
| MIL S 19500/355 : D (1) | SEMICONDUCTOR DEVICE, UNITIZED DUAL-TRANSISTORS, NPN, SILICON TYPES 2N2919, 2N2919L, 2N2920 AND 2N2920L JAN, JANTX, JANTXV AND JANS |
| MIL STD 1836 : NOTICE 1 | STANDARDIZATION & CONTROL PROGRAM FOR PARTS, MATERIALS & PROCESSES USED IN INTERCONTINENTAL BALLISTIC MISSILE WEAPON SYSTEMS |
| MIL S 19500/231 : F | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N3600, 1N4150 TX1N3600 AND TX1N4150 |
| MIL-PRF-19500-168 Revision K:2011 | SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS), SILICON, TYPES 2N1771A, 2N1772A, 2N1774A, 2N1776A, 2N1777A, 2N1778A, AND 2N2619A, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-317 Revision T:2015 | TRANSISTOR, NPN, SILICON, SWITCHING, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT), AND UNENCAPSULATED, RADIATION HARDNESS ASSURANCE, TYPES 2N2369A, 2N3227, 2N4449, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, JANKC |
| MIL-PRF-19500-350 Revision M:2015 | TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL S 19500/608 : 0 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE OR COMMON ANODE CENTER TAP, TYPES 1M6660 & 1N6660R JANTX, JANTXV & JANS |
| MIL S 19500/509 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER TYPES 2N6338 & 2N6341, JAN, JANTX, & JANTXV |
| SAE ARP4168B: 2017 | NIGHT VISION GOGGLE (NVG) COMPATIBLE LIGHT SOURCES |
| MIL-PRF-19500-772 Revision A:2014 | Semiconductor Device, Diode, Silicon, Unipolar Transient Voltage Suppressor, Types 1N8036 Through 1N8072, 1N8073 Through 1N8109, 1N8110 Through 1N8146, Through-Hole and Surface Mount Packages, Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL-HDBK-817 Base Document:1994 | SYSTEM DEVELOPMENT RADIATION HARDNESS ASSURANCE |
| MIL S 19500/527 : A | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER TYPES 2N6648, 2N6649 AND 2N6650 NON-TX, TX, AND TXV |
| MIL S 19500/313 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER TYPES 2N2432, TX2N2432, 2N2432A AND TX2N2432A |
| MIL-PRF-19500-559 Revision L:2015 | SEMICONDUCTOR DEVICE, UNITIZED, NPN, SILICON, SWITCHING, FOUR TRANSISTOR ARRAY, TYPES 2N6989, AND 2N6990, JAN, JANTX, JANTXV, JANS |
| MIL-PRF-19500-578 Revision R:2017 | Semiconductor Device, Diode, Silicon, Switching, Types 1N6638, 1N6642, 1N6643, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC |
| MIL-S-19500-62 Revision B:1968 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N501A |
| MIL S 19500/580 : LATEST | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER, TYPES JANTX AND JANTXV, 2N4234, 2N4235 AND 2N4236 |
| MIL-P-83927 Revision B:1981 | Power Supplies, Guided Missile Launchers, Single Types PP-2401B/A PP-2401C/A PP-2401D/A, PP-4285/A, PP-4286/A, and Composite Type PP-4506/A and PS-1037 |
| MIL S 19500/615 : 0 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383 JANTXV M, D AND R AND R |
| MIL S 19500/590 : (1) | SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, HIGH VOLTAGE, POWER RECTIFIER, 1N6626 THROUGH 1N6631 AND U SUFFIX VERSIONS JANTX, JANTXV AND JANS |
| MIL S 19500/396 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON SWITCHING TYPES 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, & 2N3765 JAN, JANTX, JANTXV, & JANS |
| MIL-S-19500-170 Revision A:1969 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPE 2N1499A |
| MIL-E-11991 Revision E:1983 | ELECTRONIC, ELECTRICAL, AND ELECTRO-MECHANICAL EQUIPMENT, GUIDED MISSILE AND ASSOCIATED WEAPON SYSTEMS, GENERAL SPECIFICATION FOR |
| MIL S 19500/404 : B | SEMICONDUCTOR DEVICE, SILICON, HIGH-VOLTAGE RECTIFIER MODULE TYPES 1N5597, 1N5600 AND 1N5603 |
| MIL S 19500/514 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6274 AND 2N6277, JANTX AND JANTXV |
| DSCC 01039 : A | SEMICONDUCTOR DEVICE, PNPN, THYRISTOR, SILICON, (PROGRAMMABLE UNIJUNCTION TRANSISTOR), TYPES 2N6116, 2N6117, 2N6118, 2N6137, 2N6138 |
| MIL S 19500/198 : A | SEMICONDUCTOR DEVICE, THYRISTOR TYPE 2N1870A, 2N1871A, 2N1872A, AND 2N1874A |
| MIL-PRF-19500-240 Revision T:2014 | SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N645-1, 1N647-1, 1N649-1, 1N645UR-1, 1N647UR-1, 1N649UR-1, JAN, JANTX, AND JANTXV 1/ |
| MIL-PRF-19500-511 Revision K:2016 | TRANSISTOR, PNP, SILICON, SWITCHING, THROUGH-HOLE AND SURFACE MOUNT PACKAGES, TYPE 2N4261, JAN, JANTX, JANTXV AND JANS, JANHC AND JANKC |
| MIL S 19500/550 : A | SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY HIGH CURRENT TYPES 1N6304, 1N6305, 1N6305, IN6306 AND -R TYPES JAN, JANTX, JANTXV |
| MIL S 19500/525 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER TYPES 2N6546, TX2N6546, TXV2N6546; 2N6547, TX2N6547, TXV2N6547 |
| MIL-PRF-19500-115 Revision P:2016 | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N3016 THROUGH 1N3051 AND 1N3821 THROUGH 1N3828 ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT) AND UNENCAPSULATED, 5, 2, AND 1 PERCENT VOLTAGE TOLERANCE, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANHC |
| MIL-PRF-19500-720 Revision C:2013 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6882UTK4, 1N6883UTK4, 1N6884UTK4, 1N6885UTK4, 1N6882UTK4CS, 1N6883UTK4CS, 1N6884UTK4CS, 1N6885UTK4CS, 1N6882UTK4AS, 1N6883UTK4AS, 1N6884UTK4AS, AND 1N6885UTK4AS, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-734 Revision A:2012 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N7569, 2N7570, AND 2N7571, JAN, JANTX, JANTXV AND JANS |
| DSCC 86001 : F | RELAYS, SOLID STATE, OPTICALLY ISOLATED, HERMETICALLY SEALED, ANALOG SIGNAL SWITCHING, SPST (N.O.), CMOS AND TTL CONTROL INPUTS, 1 AMPERE, 60 V DC MAXIMUM |
| MIL S 19500/594 : (2) | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THRU 1N6666 AND 1N6664 THRU 1N6666R JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/561 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPE JAN, JANTX AND JANTXV 2N6193 |
| MIL-PRF-19500-627 Revision C:2014 | SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, 1N6688, 1N6689, 1N6688US, 1N6689US JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-697 Revision F:2015 | TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, DEVICE TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H |
| MIL-PRF-19500-712 Revision F:2017 | TRANSISTOR, FIELD EFFECT, P-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7545, 2N7546, 2N7547, AND 2N7548, JANTXVR, F, G, H AND JANSR, F, G, H |
| MIL-PRF-19500-528 Revision B:2008 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6032 AND 2N6033 JAN, JANTX, AND JANTXV |
| MIL S 19500/583 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER, TYPES JANTX AND JANTXV, 2N5681 AND 2N5682 |
| MIL S 19500/228 : G | SEMICONDUCTOR DEVICE, DIODE, SILICON RECTIFIER TYPES TX AND NON TX 1N3611 1N3612, 1N3613, 1N3614 AND 1N3957 |
| MIL S 19500/263 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1714, 2N1714S, 2N1715, 2N1715S, 2N1716, 2N1716S, 2N1717, AND 2N1717S |
| MIL-S-19500-459 Revision A:1973 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER TYPES 2N5967 AND 2N5969 NON-TX, TX, TXV |
| MIL-S-19500-58 Revision D:1966 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N665 |
| MIL S 19500/501 : B | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER TYPES 2N6051, 2N6052 JAN, JANTX AND JANTXV |
| MIL S 19500/565 : A | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6895, 2N6896, 2N6897, AND 2N6898 JANTX, JANTXV AND JANS |
| MIL S 19500/582 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER, TYPES JANTX AND JANTXV, 2N5679, 2N5680 |
| MIL S 19500/376 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER TYPE 2N2484 JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/421 : D | SEMICONDUCTOR DEVICE, UNITIZED, DUAL TRANSISTOR, NPN/PNP, COMPLEMENTARY, SILICON TYPES 2N3838 AND 2N4854, JAN, JANTX AND JANTXV |
| MIL S 19500/454 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N5660, 2N5661, 2N5662 AND 2N5663 JAN, JANTX AND JANTXV |
| MIL S 19500/408 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N3715 & 2N3716 JANTX, JANTXV & JANS |
| MIL S 19500/556 : E (1) | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6782, 2N6784 AND 2N6786, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL S 19500/623 : 0 | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, HIGH-POWER TYPE 2N7371 JANTX, JANTXV & JANS |
| MIL S 19500/366 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER TYPES 2N3498, 2N3498L, 2N3499, 2N3499L, 2N3500, 2N3500L, 2N3501 AND 2N3501L, JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/301 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON LOW POWER TYPE 2N918 JANS, JANTX AND JANTXV |
| MIL S 19500/512 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N4029 AND 2N4033 JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/443 : A | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING 1N5719 AND TX 1N5719 |
| MIL S 19500/585 : 0 | SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, HIGH VOLTAGE, POWER RECTIFIER, 1N6620 THROUGH 1N6625 AND U SUFFIX VERSIONS, JANTX, JANTXV AND JANS |
| MIL S 19500/423 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPES, 2N5581 AND 2N5582, JANTX |
| MIL-S-19500-138 Revision C:1970 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPE 2N1118 |
| MIL-S-19500-432 Base Document:1970 | SEMICONDUCTOR DEVICE, DIODE, SILICON JAN1N5624 TO JAN1N5627, JANTX1N5624 TO JANTX1N5627 |
| MIL-S-19500-133 Revision A:1970 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP GERANIUM TYPE 2N1411 |
| DSCC 85122 : G | INDICATOR ASSEMBLIES: RED, YELLOW, GREEN; PLAIN AND FILTERED LENSES; PANEL-SEALED, AND PANEL AND REAR SEALED |
| MIL S 19500/587 : 0 | SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N6661, 1N6662, 1N6663, 1N6661US, 1N6662US, 1N6663US, JANTX, JANTXV, JANS |
| MIL S 19500/622 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7368 JANTX, JANTXV & JANS |
| MIL S 19500/607 : (1) | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL & P-CHANNEL, SILICON |
| NASA MSFC STD 3619 : 2012 | MSFC COUNTERFEIT ELECTRICAL, ELECTRONIC, AND ELECTROMECHANICAL PARTS AVOIDANCE, DETECTION, MITIGATION, AND DISPOSITION REQUIREMENTS FOR SPACE FLIGHT AND CRITICAL GROUND SUPPORT HARDWARE |
| MIL-S-19500-1 Revision A:1967 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N220 |
| MIL-S-19500-179 Revision A:1972 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPE 2N1234 |
| MIL-S-19500-571 Revision A:1993 | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, MOS, N-CHANNEL, SILICON TYPES 2N7104, 2N7105, 2N7108, 2N7109, JANTX, JANTXV & JANS |
| MIL S 19500/515 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON POWER TYPES 2N6378,TX2N6378, RXV2N6378, 2N6379, TX2N6379, TXV2N6379 |
| MIL-PRF-39016-7 Revision G:2004 | Relays, Electromagnetic, Established Reliability, SPDT, Low Level to 1 Ampere |
| MIL-P-62341 Revision A:1986 | PRINTED CIRCUIT CARD, M1 & M1A1 TANK, GENERAL SPECIFICATION FOR |
| MIL-PRF-19500-553 Revision F:2014 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6391, JAN, JANTX, JANTXV, JANS, AND JANHC |
| MIL-PRF-19500-705 Revision E:2014 | Transistor, Field Effect Radiation Hardened, N-Channel, Silicon Device Types 2N7488T3, 2N7489T3, 2N7490T3, and 2N7556T3 JANTXVR and JANSR |
| MIL S 19500/624 : 0 | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7370 JANTX, JANTXV & JANS |
| MIL-PRF-39016-27 Revision F:2005 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, SPDT, LOW LEVEL TO 0.5 AMPERE (LATCHING) WITH INTERNAL DIODES FOR COIL TRANSIENT SUPPRESSION |
| MIL-PRF-39016-28 Revision F:2005 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, SPDT, LOW LEVEL TO 0.5 AMPERE (LATCHING) WITH INTERNAL DIODES FOR COIL TRANSIENT SUPPRESSION AND POLARITY REVERSAL PROTECTION |
| MIL S 19500/6 : B (2) | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N43A AND 2N44A |
| MIL S 19500/600 : A | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7229 AND 2N7230 JANTX, JANTXV, JANS, JANHC AND JANKC |
| MIL S 19500/37 : E | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N333, 2N335, 2N336, 2N333A, 2N335A, 2N336A, 2N333T2, 2N335T2, 2N336T2, 2N333LT2, 2N335LT2, 2N336LT2, 2N333AT2, 2N335AT2, 2N336AT2, 2N333ALT2, 2N335ALT2, AND 2N336ALT2, JAN |
| MIL-S-19500-458 Revision A:1973 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER TYPES 2N6061, 2N6063, NON-TX, TX, AND TXV |
| MIL S 19500/253 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER, TYPES 2N929 TX2N929, 2N930, AND TX2N930 |
| MIL S 19500/255 : H (1) | SEMICONDUCTOR DEVICE, TRANSISTOR NPN, SILICON, SWITCHING, TYPES 2N2221A, 2N2222A, 2N2221AUA, 2N2222AUA, 2N2221AUB, AND 2N2222AUB, JAN, JANTX, JANTXV, JANTXVD, JANTXVH, JANTXVM, JANTXVR, JANS, JANSD, JANSH, JANSM, JANSR, JANHC, AND JANKC |
| MIL S 19500/383 : A | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE VARIABLE CAPACITOR TYPES 1N5139 TO 1N5148A AND TX1N5139A TO TX1N5148A |
| MIL S 19500/463 : D | SEMICONDUCTOR DEVICE, DIODE, SILICON, CURRENT REGULATOR, TYPES 1N5283 THROUGH 1N5314 JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/476 : 0 | SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N5114 TO 2N5116 AND TX2N5114 TO TX2N5116 |
| MIL S 19500/578 : B (2) | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N6638, 1N6642, 1N6643, 1N6638U, 1N6642U, 1N6643U AND 1N4148-1 JANTX, JANTXV AND JANS |
| MIL S 19500/472 : A | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER TYPES 2N6350, 2N6351, 2N6352, 2N6353, JAN, JANTX, JANTXTV |
| MIL S 19500/127 : M | SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N4370A THROUGH 1N4372A, 1N746A, THROUGH 1N759A, 1N4370A-1 THROUGH 1N4372A-1, 1N746A-1 THROUGH 1N759A-1, JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/343 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPE 2N2857 JAN, JANTX, JANTXV, AND JANS |
| SAE AS6171/7 | Techniques for Suspect/Counterfeit EEE Parts Detection by Electrical Test Methods |
| MIL-PRF-19500-753 Revision C:2017 | TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7580, 2N7582, 2N7584, AND 2N7586, JANTXV, AND JANS |
| MIL-PRF-19500-679 Revision C:2013 | Semiconductor Device, Diode, Silicon, Schottky, Type 1N6844U3, Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-102 Revision B:2013 | SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D JAN |
| MIL S 19500/504 : B | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER TYPES 2N6283, 2N6284, NON-TX, TX AND TXV |
| MIL S 19500/567 : 0 | SEMICONDUCTOR DEVICE, DIODE SILICON SCHOTTKY BARRIER, FAST RECOVERY TYPE 1N6492 JANTX, JANTXV AND JANS |
| MIL S 19500/544 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N5152, 2N5154, JAN, JANTX AND JANTXV |
| MIL S 19500/84 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON SWITCHING TYPE 2N545 |
| MIL S 19500/374 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N3996 TO 2N3999, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC |
| MIL S 19500/118 : D | SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES (TX AND NON-TX) |
| MIL S 19500/246 : F | SEMICONDUCTOR DEVICE, DIODE, SILICON POWER RECTIFIER TYPES 1N3289 1N3291 1N3293, 1N3294, 1N3295 AND R TYPES JAN JANTX JANTXV |
| MIL S 19500/433 : D (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER TYPES 2N4399, 2N5745, JAN JANTX, JANTXV, AND JANS |
| GR 1312 CORE : ISSUE 3 | GENERIC REQUIREMENTS FOR OPTICAL FIBER AMPLIFIERS AND PROPRIETARY DENSE WAVELENGTH-DIVISION MULTIPLEXED SYSTEMS |
| MIL-STD-1547 Revision B:1992 | ELECTRONIC PARTS, MATERIALS, AND PROCESSES FOR SPACE VEHICLES |
| MIL-PRF-19500-628 Revision C:2014 | SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, 1N6690 THROUGH 1N6693, 1N6690US THROUGH 1N6693US JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-395 Revision L:2015 | Transistor, NPN, Silicon, Switching, Encapsulated (Through-Hole and Surface Mount) Types 2N3735 and 2N3737 Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, JANKC |
| MIL-HDBK-338 Revision B:1998 | ELECTRONIC RELIABILITY DESIGN HANDBOOK |
| MIL S 19500/120 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LOW-POWER TYPE 2N706 |
| MIL R 28750 : C SUPP 1 | RELAYS, SOLID STATE, SEALED, OPTICALLY ISOLATED, ZERO VOLTAGE TURN ON, 25 AMPERES, 250 VOLTS MAXIMUM, 45-440 HZ, POWER SWITCHING |
| MIL-B-63512 Base Document:1982 | BODY ASSEMBLY FOR MINE, ANTI PERSONNEL, BLU 92 B |
| MIL S 19500/336 : C (1) | SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, PNP, SILICON TYPES 2N3810 AND 2N3811 JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/379 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH POWER TYPES 2N3791, AND 2N3792, JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/441 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER TYPES 2N3740, 2N3741, JAN, JANTX, AND JANTXV |
| MIL S 19500/610 : B | SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 & 1N6677UR-1 JANTX, JANTXV & JANC |
| MIL S 19500/168 : C NOTICE 1 | SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS), SILICON TYPES 2N1771A,2N1772A,2N1774A,2N1776A,2N1777A,TX2N1771A, TX2N1772A,TX2N1774A,TX2N1776A,TX2N1777A |
| MIL S 19500/427 : E | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/428 : B | SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPE 2N4416A JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500 Revision P:2010 | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
| MIL S 19500/439 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N5038 & 2N5039 JAN, JANTX, JANTXV, JANS, JANHC, JANKC |
| MIL-HDBK-280 Base Document:1985 | NEUTRON HARDNESS ASSURANCE GUIDELINES FOR SEMICONDUCTOR DEVICES AND MICROCIRCUITS |
| MIL S 19500/456 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPES 2N5302, 2N5303, JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/445 : C | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N5712 JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-28750-10 Revision D:2015 | RELAY, SOLID-STATE, SEALED, CLASS 1, OPTICALLY ISOLATED, ZERO VOLTAGE TURN-ON, 25 AMPERES, 250 V MAXIMUM, 400 HZ, POWER SWITCHING, SPST (N.O.) |
| MIL S 19500/598 : 0 | SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR |
| MIL S 19500/554 : (3) | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6392, JAN, JAN TX, JANTXV |
| MIL S 19500/511 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPE 2N4261 JAN, JANTX, JANTXV AND JANS |
| MIL-S-19500-219 Revision A:1963 | TRANSISTOR, PNP, GERMANIUM, POWER, SWITCHING, TYPES 2N1651, 2N1652, 2N1653 |
| MIL S 19500/534 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N5004, JAN, JANTX AND JANTXV |
| MIL S 19500/526 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER TYPES 2N3879 JAN, JANTX, AND JANTXV |
| MIL S 19500/528 : 0 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6032 AND 2N6033 NON-TX, TX AND TXV |
| MIL-PRF-19500-304 Revision E:2011 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY TYPES 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, 1N3893R, AND A-VERSIONS, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-774 Base Document:2015 | RECTIFIER, SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER, TYPES 1N8255, 1N8256, 1N8257, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-349 Revision K:2017 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N3506, AND 2N3507, JAN, JANTX, JANTXV, JANS, JANHC, JANKC |
| MIL-PRF-19500-617 Revision E:2014 | SEMICONDUCTOR DEVICES, UNITIZED, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6672 THROUGH 1N6674 AND 1N6672R THROUGH 1N6674R, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-39016-30 Revision F:2005 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, DPDT, LOW LEVEL TO 1.0 AMPERE (LATCHING) WITH INTERNAL DIODES FOR COIL TRANSIENT SUPPRESSION AND POLARITY REVERSAL PROTECTION |
| MIL-PRF-19500-543 Revision P:2016 | TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON REPETITIVE AVALANCHE, ENCAPSULATED (THROUGH-HOLE PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 2N6764, 2N6766, 2N6768, 2N6770, AND JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-727 Revision C:2014 | TRANSISTOR, NPN, SILICON, SWITCHING, DEVICE TYPES 2N5010 THROUGH 2N5015, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-619 Revision B:2000 | SEMICONDUCTOR DEVICE, DIODE, SCHOTTKY POWER RECTIFIERS, TYPES 1N6849 - 1N6856, 1N6849U1 - 1N6856U1, 1N6849U2 - 1N6856U2 AND 1N6849U3 - 1N6856U3 JAN, JANTX AND JANTXV |
| MIL-PRF-39016-37 Revision D:2014 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, DPDT, LOW LEVEL TO 2 AMPERES (0.150-INCH TERMINAL SPACING), WITH INTERNAL DIODE FOR COIL TRANSIENT SUPPRESSION |
| MIL S 19500/507 : B | SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES, 1N6036A-1N6072A, JAN, JANTX, JANTXV AND JANS |
| MIL-S-19500-513 Base Document:1976 | SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS) SILICON TYPES: 2N6605, 2N6606, 2N6607, 2N6608, NON-TX, TX AND TXV |
| MIL S 19500/430 : A | SEMICONDUCTOR DEVICE, UNITIZED, DUAL-FIELD-EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES TX AND NON-TX 2N5545, 2N5546, AND 2N5547 |
| MIL-S-19500-373 Revision A:1972 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPES 2N914 AND TX2N914 |
| MIL-S-19500-218 Revision A:1966 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N757A, 2N759A AND 2N760A |
| MIL-S-19500-277 Revision D:1991 | SEMICONDUCTOR DEVICE,TRANSISTOR, NPN, SILICON POWER TYPES 2N2150, AND 2N2151 JANTX |
| MIL S 19500/575 : A (2) | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE IN6512 THROUGH IN6519 IN6512U THROUGH IN6519U JANTX, JANTXV, AND JANS |
| MIL-S-19500-203 Revision C:1970 | SEMICONDUCTOR DEVICE, THYRISTORS, (CONTROLLED RECTIFIERS) SILICON TYPES 2N2024, 2N2025, 2N2027, 2N2029, 2N2030 |
| MIL S 19500/108 : E | SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS), SILICON TYPES 2N682, 2N683, 2N685 THROUGH 2N692, 2N5206, TX2N682, TX2N683, TX2N685 THROUGH TX2N692 AND TX2N5206 |
| MIL S 19500/199 : A | SEMICONDUCTOR DEVICE, DIODE, SILICON, FORWARD-VOLTAGE REGULATOR TYPE 1N816 |
| MIL S 19500/455 : B (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING TYPES 2N5664, 2N5665, 2N5666 AND 2N5667 JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/596 : C | SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, 2N7222U, JAN, JANTX, JANS, JANHC, AND JANKC |
| MIL S 19500/562 : B | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6804, 2N6806, JANTX, JANTXV AND JANS |
| MIL-S-19500-171 Revision B:1968 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPE 2N1853 |
| MIL S 19500/394 : B (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING, TYPES 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, 2N5238S, JAN, JANTX, JAMTXV, AND JANS |
| MIL S 19500/519 : A | SEMICONDUCTOR DEVICES, DIODE, LIGHT EMITTING, RED TYPES, CLEAR LENS AND PANEL MOUNT ASSEMBLY TYPES |
| ASTM E 1161 : 2009 : R2014 | Standard Practice for Radiologic Examination of Semiconductors and Electronic Components |
| IEC PAS 62686-1:2011 | Process management for avionics - Aerospace qualified electronic components (AQEC) - Part 1: General requirements for high reliability integrated circuits and discrete semiconductors |
| NASA MSFC STD 3012 : 2012 | ELECTRICAL, ELECTRONIC, AND ELECTROMECHANICAL (EEE) PARTS MANAGEMENT AND CONTROL REQUIREMENTS FOR MSFC SPACE FLIGHT HARDWARE |
| MIL-STD-750-1 Revision A:2015 | Environmental Test Methods for Semiconductor Devices Part 1: Test Methods 1000 Through 1999 |
| EN 16602-60-05:2014 | Space product assurance - Generic procurement requirements for hybrids |
| MIL S 19500/478 : F | SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER TYPES 1N5812, 1N5814, 1N5816 AND TYPES JAN, JANTX AND JANTXV |
| MIL S 19500/397 : D (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPES 2N3743, 2N4930, 2N4931 JANTX, AND JANTXV |
| DSCC 99008 : C | SEMICONDUCTOR DEVICE, DIODE, SILICON, RF MIXER, 1N26B FAMILY |
| MIL S 19500/291 : E | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES N2N906A, 2N2907A, 2N2906AUA 2N2907AUA, 2N2906AUB, AND 2N2907AUB, JAN, JANTX, JANTXV, JANS, JANHC, JANKC |
| MIL S 19500/446 : A | SEMICONDUCTOR DEVICE, SILICON, HIGH POWER, SINGLE PHASE, FULL WAVE BRIDGE RECTIFIER TYPES SPA25, SPB25, AND SPD25 |
| BS EN 16602-60-05:2014 | Space product assurance. Generic procurement requirements for hybrids |
| MIL S 19500/124 : G (1) | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR 8 AND RB TYPES 1N2970 THROUGH 1N2977, 1N2979, 1N2980, 1N2984 THROUGH 1N2986, 1N2988 THROUGH 1N2995, 1N2997, 1N2999 THROUGH 1N3005, 1N3007, 1N3008, 1N3009, 1N3011, 1N3012, 1N3014, 1N3015, A AND RA TYPES 1N3993 THROUGH 1N3998, JAN, JANTX, JANXV AND JANS |
| MIL S 19500/553 : (6) | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVER, TYPE 1N6391 JAN, JANTX AND JANTXV |
| MIL S 19500/370 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPES 2N3442, JAN, JANTX, AND JANTXV |
| MIL S 19500/398 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH FREQUENCY TYPES 2N3866 AND TX2N3866 |
| MIL S 19500/193 : C | SEMICONDUCTOR DEVICE, DIODE,SILICON RECTIFIER TYPES 1N457, 1N458 AND 1N459 |
| MIL-PRF-19500-561 Revision K:2015 | TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N6193, JAN, JANTX, JANTXV, JANS, JANHC, JANKC |
| MIL-PRF-19500-574 Revision D:2016 | LIGHT EMITTING DIODE, RED, YELLOW, AND GREEN, THROUGH HOLE MOUNT PACKAGES, TYPES 1N6497, 1N6498, 1N6499, 1N6503, 1N6504, AND 1N6505, QUALITY LEVELS JAN AND JANTX |
| MIL-PRF-19500-521 Revision F:2016 | Light Emitting Diode, Green, Through-Hole Mount and Panel Mount Assembly, Clear and Diffused Lens, Types 1N6094, 1N6611, M19500/52101, M19500/52102, M19500/52103 and M19500/52104, Quality Levels JANand JANTX |
| MIL-PRF-19500-74 Revision F:2014 | TRANSISTOR, NPN, SILICON, MEDIUM-POWER, THROUGH-HOLE MOUNT PACKAGE, TYPES 2N497, 2N498, 2N656, AND 2N657, QUALITY LEVEL JAN |
| MIL-PRF-19500-396 Revision M:2015 | TRANSISTOR, PNP, SILICON, SWITCHING, ENCAPSULATED (THROUGH HOLE AND SURFACE MOUNT) AND UNENCAPSULATED, RADIATION HARDNESS ASSURANCE, DEVICE TYPES 2N3762, 2N3763, 2N3764, AND 2N3765, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC JANHCA, AND JANKCA |
| MIL-PRF-19500-657 Revision B:2011 | SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N AND P-CHANNEL, SILICON VARIOUS TYPES JANHC AND JANKC |
| MIL-PRF-19500-504 Revision F:2012 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON, TYPES 2N6283 AND 2N6284, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-564 Revision J:2014 | Transistor, Field Effect, P-Channel, Silicon, Types 2N6849, and 2N6851, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC |
| MIL-PRF-19500-625 Revision A:1997 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N6683, 1N6684, 1N6685, 1N6683US, 1N6684US, AND 1N6685US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-742 Revision B:2014 | SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802CB, 1N5804CB, 1N5806CB, 1N5807CB, 1N5809CB, AND 1N5811CB, 1N5802CBUS, 1N5804CBUS, 1N5806CBUS, 1N5807CBUS, 1N5809CBUS, AND 1N5811CBUS, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-719 Revision C:2013 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6872UTK2, 1N6873UTK2, 1N6874UTK2, 1N6875UTK2, 1N6872UTK2AS, 1N6873UTK2AS, 1N6874UTK2AS, 1N6875UTK2AS, 1N6872UTK2CS, 1N6873UTK2CS, 1N6874UTK2CS, AND 1N6875UTK2CS, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-444 Revision P:2017 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, SCHOTTKY, TYPES 1N5711, 1N5712, 1N6857, 1N6858, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-S-19500-192 Revision B:1989 | SEMICONDUCTOR DEVICE, DIODE, GERMANIUM SWITCHING TYPE JAN 1N276 |
| MIL-S-19500-25 Revision B:1968 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N240 |
| MIL-PRF-19500-496 Revision E:2010 | SEMICONDUCTOR DEVICE, DUAL TRANSISTOR, PNP, SILICON, UNITIZED, TYPES 2N5795, 2N5796, 2N5796U, 2N5796UC, 2N5795A, 2N5796A, 2N5796AU, AND 2N5796AUC, JAN, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANTX, AND JANTXV |
| MIL-PRF-19500-731 Revision B:2015 | Semiconductor Devices, Diode, Silicon, Schottky, Dual Die Types 1N7058CCU3, 1N7058CCU3C, and Single Die Type 1N7038U3, Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-655 Revision G:2015 | TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXV AND JANS |
| MIL-HDBK-816 Base Document:1994 | Guidelines for Developing Radiation Hardness Assurance Device Specifications |
| MIL S 19500/385 : A (3) | SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N4856 THROUGH 2N4861 JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-689 Revision A:2014 | Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R |
| MIL-PRF-19500-623 Revision E:2015 | TRANSISTOR, DARLINGTON, PNP SILICON, HIGH-POWER TYPE 2N7371 JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-296 Revision F:2012 | SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2609, JAN AND UB |
| MIL-PRF-19500-507 Revision G:2017 | Semiconductor Device, Diode, Silicon, Bipolar Transient Voltage Suppressor, Types 1N6036 Through 1N6072 JAN, JANTX, and JANTXV |
| MIL-PRF-19500-633 Revision D:2013 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL SILICON, TYPES 2N7403 AND 2N7404, JANSD AND JANSR |
| MIL S 19500/599 : B | SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-R-28750-5 Revision G:2015 | RELAY, SOLID STATE, HERMETICALLY SEALED, ISOLATED, +/- 50 MA, +/- 40 V, AC OR DC, ANALOG SIGNAL SWITCHING, SPST (N. O.) |
| MIL S 19500/350 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N3867, 2N3867S, 2N3868 AND 2N3868S JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-276 Revision J:2014 | SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS), SILICON, TYPES 2N2323, 2N2324, 2N2326, 2N2328, 2N2329, AND S AND U4 VERSIONS, 2N2323A, 2N2324A, 2N2326A, 2N2328A, 2N2329A, AND AS AND AU4 VERSIONS, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-556 Revision L:2014 | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, AND 2N6786U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL S 19500/287 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON SWITCHING TYPES 2N3013 AND TX2N3013 |
| MIL-PRF-39016-53 Revision C:2006 | Relays, Electromagnetic, Established Reliability, Hermetically Sealed, 4PDT, Low Level to 2 Amperes (.150-Inch Terminal Spacing) with Internal Diode for Coil Transient Suppression |
| MIL-PRF-39016-25 Revision F:2005 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, SPDT, LOW LEVEL TO 1.0 AMPERE (SENSITIVE, 40 MILLIWATTS) WITH AN INTERNAL DIODE FOR COIL TRANSIENT SUPPRESSION |
| MIL S 19500/115 : H | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N3821A THROUGH 1N3828A AND 1N3016B THROUGH 1N3051, TX AND TXV |
| MIL-PRF-39016-24 Revision F:2005 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, SPDT, LOW LEVEL TO 1.0 AMPERE WITH INTERNAL DIODES FOR COIL TRANSIENT SUPPRESSION AND POLARITY REVERSAL PROTECTION |
| MIL S 19500/604 : 0 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7272, 2N7275, 2N7278 & 2N7281 JANTXVM, D, R & JANSM, D & R |
| MIL-PRF-39016-8 Revision J:2016 | Relays, Electromagnetic, Established Reliability, SPDT, Low Level to 0.5 Ampere (Latching) |
| MIL S 19500/572 : 0 | SEMICONDUCTOR DEVICE, DIODE, LIGHT-EMITTING TYPES JANTX 1N6493, 1N6494, 1N6495, 1N6500, 1N6501 AND 1N6502 |
| MIL S 19500/595 : B (1) | SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, 2N7237U, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL S 19500/547 : A | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6660 AND 2N6661, JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/613 : (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N7373, JANTX, JANTXV & JANS |
| MIL S 19500/453 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH FREQUENCY TYPES 2N5109 AND TX2N5109 |
| MIL-S-19500-78 Revision C:1971 | SEMICONDUCTOR DEVICE, TRANSISTOR PNP, SILICON, LOW-POWER TYPES 2N1025, 2N1026 AND 2N1469 |
| MIL-S-19500-457 Revision A:1973 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER TYPES 2N6060, 2N6062, NON-TX, TX, AND TXV |
| MIL S 19500/74 : E | SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, MEDIUM POWER, TYPES 2N497, 2N498, 2N656 AND 2N657 |
| MIL S 19500/431 : A | SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL, SILICON - TYPES 2N4091, 2N4092, AND 2N4093, AND TX2N4091, TX2N4092, AND TX2N4093 |
| MIL-S-19500-363 Base Document:1967 | TRANSISTOR, PNP, SILICON DUAL TYPE 3N93 |
| MIL S 19500/545 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER TYPES 2N5151, 2N5153, JAN, JANTX AND JANTXV |
| MIL S 19500/211 : B NOTICE 2 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N3164, 1N3168, 1N3170, 1N3172, 1N3174, 1N3175, 1N3176, 1N3177 & R TYPES JAN, JANTX & JANTXV |
| MIL S 19500/426 : A (2) | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER TYPE 2N4957 JAN, JANTX, JANTXV AND JANS |
| GEIA SSB 1.001 : 1999 | QUALIFICATION AND RELIABILITY MONITORS |
| MIL-PRF-19500-308 Revision D:2013 | Semiconductor Device, Diode, Silicon, Power Rectifier, Fast-Recovery, Case Mount Stud Package, Standard and Reverse Polarity, Types 1N3909, 1N3910, 1N3911, 1N3912, 1N3913, R and A VersionsQuality Levels JAN, JANTX, and JANTXV |
| MIL-PRF-19500-286 Revision K:2013 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N4245 THROUGH 1N4249, JAN, JANTX, JANTXV, AND JANHC |
| MIL-PRF-19500-397 Revision K:2017 | Transistor, PNP, Silicon, Types 2N3743, 2N4930,and 2N4931, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC |
| MIL-PRF-19500-601 Revision L:2016 | TRANSISTOR, N-CHANNEL, FIELD EFFECT, POWER RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), TYPES 2N7261 AND 2N7262, JANTXVR, F, G, AND H AND JANSR, F, G, AND H |
| MIL-PRF-19500-680 Revision B:2015 | RECTIFIER, SEMICONDUCTOR DEVICE, SILICON, DUAL SCHOTTKY CENTER TAP, FOR POWER APPLICATIONS, SURFACE MOUNT, TYPE 1N6842, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-533 Revision N:2016 | DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N6309 THROUGH 1N6355; PLUS C AND D TOLERANCE SUFFIX, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-652 Revision C:2013 | SEMICONDUCTOR DEVICE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-356 Revision L:2014 | Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N4954 Through 1N4996, 1N5968, 1N5969, and 1N6632 Through 1N6637, Encapsulated (Axial Leaded and Surface Mount Package) and Unencapsulated, 5, 2, and 1 Percent Voltage Tolerance, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC and JANKC |
| MIL-PRF-19500-751 Revision A:2014 | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7508U3, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-722 Revision C:2013 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6902UTK3, 1N6903UTK3, 1N6904UTK3, 1N6905UTK3, 1N6902UTK3CS, 1N6903UTK3CS, 1N6904UTK3CS, 1N6905UTK3CS, 1N6902UTK3AS, 1N6903UTK3AS, 1N6904UTK3AS AND 1N6905UTK3AS, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-590 Revision L:2017 | SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, 1N6626 THROUGH 1N6631, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-526 Revision H:2012 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3879, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-613 Revision E:2013 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N7373, JAN, JANTX, JANTXV, JANS AND JANSM, D, P, L, R, F, G, AND H |
| MIL-PRF-19500-752 Revision A:2017 | TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, LOGIC-LEVEL SILICON, ENCAPSULATED, TYPE 2N7608T2, JANTXV, AND JANS |
| MIL-PRF-19500-187 Revision B:2005 | Semiconductor Device, Diode, Silicon, High-Voltage, Type JAN1N2361 |
| MIL-PRF-19500-413 Revision G:2015 | TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPES 2N3771 AND 2N3772, QUALITY LEVELS JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-738 Revision B:2014 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N7575, 2N7576, AND 2N7577, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-156 Revision N:2008 | SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, H |
| MIL-PRF-19500-749 Revision C:2015 | TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7506U8 AND 2N7506U8C, JANTXVR, JANTXVF, JANSR AND JANSF |
| MIL-PRF-19500-515 Revision F:2016 | TRANSISTOR, PNP, SILICON, POWER, THROUGH HOLE, TYPES 2N6378 AND 2N6379, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANHC |
| MIL-PRF-19500-498 Revision E:2005 | Transistor, NPN, Silicon, Power Types 2N6306 and 2N6308, Case Mount Packages, Quality Levels JAN, JANTX, and JANTXV |
| MIL-PRF-19500-385 Revision J:2015 | TRANSISTOR, JUNCTION FIELD EFFECT, N-CHANNEL, SILICON, DEVICE TYPES 2N4856 THROUGH 2N4861, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-608 Revision D:2009 | Semiconductor Device, Diode, Silicon, Schottky, Power Rectifier, Common Cathode, Common Anode, Doubler, Type 1N6660,Case Mount Package, Quality LevelsJAN, JANTX, JANTXV, and JANS |
| MIL S 19491 : G | SEMICONDUCTOR DEVICE, PACKAGING OF |
| MIL-PRF-39016-11 Revision G:2004 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, DPDT, LOW LEVEL TO 1.0 AMPERE (SENSITIVE, 60 MILLIWATTS, COIL OPERATE POWER AT 25 DEGREES C |
| MIL-PRF-19500-634 Revision D:2013 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR |
| MIL-PRF-19500-391 Revision P:2015 | Transistor, NPN, Silicon, Low-Power, Device Types 2N3019, 2N3057A, and 2N3700,Encapsulated (Through-Hole and Surface Mount)and Unencapsulated, Radiation Hardness Assurance, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC,and JANKC |
| MIL R 83530 : A | RESISTOR, VOLTAGE SENSITIVE (VARISTOR, METAL OXIDE) GENERAL SPECIFICATION FOR |
| MIL S 19500/628 : 0 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6690 THROUGH 1N6693, 1N6690US THROUGH 1N6693US, JANTX, JANTXV, AND JANS |
| MIL-PRF-39016-26 Revision F:2005 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, SPDT, LOW LEVEL TO 1.0 AMPERE (SENSITIVE 4O MILLIWATTS) WITH INTERNAL DIODES FOR COIL TRANSIENT SUPPRESSION AND POLARITY REVERSAL PROTECTION |
| MIL-PRF-19500-539 Revision G:2014 | TRANSISTOR, NPN, SILICON, POWER DARLINGTON, TYPES 2N6300 AND 2N6301, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-550 Revision D:2015 | SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT, ENCAPSULATED (STUD AND SURFACE MOUNT PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 1N6304, 1N6305, 1N6306, AND R TYPES, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-253 Revision M:2016 | TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N930 JAN, JANTX, JANTXV, JANS, JANHC, JANKC |
| MIL-PRF-19500-616 Revision H:2015 | Semiconductor Device, Diode, Silicon, Power Rectifier, Ultrafast Dual, Common Cathode or Anode Center Tap, Types 1N6657 Through 1N6659 Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-701 Revision C:2014 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H |
| MIL-PRF-19500-519 Revision F:2016 | Light Emitting Diode, Red, Through-Hole Mountand Panel Mount Assembly, Clear and Diffused Lens, Types 1N6092, 1N6609, M19500/51901, M19500/51902, M19500/51903 and M19500/51904, Quality Levels JAN and JANTX |
| MIL-PRF-19500-246 Revision K:2012 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N3289, 1N3291, 1N3293, 1N3294, 1N3295, AND R TYPES, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-681 Revision D:2015 | Rectifier, Semiconductor Device, Silicon, Schottky, Dual, Center Tap, for Power Applications, Surface Mount, Type 1N6843, Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-710 Revision C:2013 | Semiconductor Device, Transistor, NPN, Silicon, Power, Types 2N6674T1, 2N6674T3, 2N6675T1, and 2N6675T3, JAN, JANTX, and JANTXV |
| MIL-PRF-19500-467 Revision C:2017 | Light Emitting Diode, Red, Through-Hole Mount, Type 1N5765, Quality Levels JAN and JANTX |
| MIL-PRF-19500-348 Revision G:2017 | TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N3467, 2N3468, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-622 Revision D:2013 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-554 Revision F:2015 | DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6392, JAN, JANTX, JANTXV, AND JANHC |
| MIL-PRF-19500-723 Revision D:2017 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6910, 1N6911, 1N6912, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-555 Revision M:2017 | TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6788, 2N6790, 2N6792, AND 2N6794, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-581 Revision C:2013 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER, TYPES 2N4237, 2N4238, AND 2N4239, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-637 Base Document:1997 | SEMICONDUCTOR DEVICE, DIODE, GALLIUM ARSENIDE, POWER RECTIFIER, COMMON CATHODE TYPE 1N6755 JANTX, JANTXV AND JANS |
| MIL-PRF-19500-714 Base Document:2009 | Semiconductor Device, Field Effect Transistor, Encapsulated Plastic, N-Channel, Silicon, Type 2N7558, 2N7559 2N7560, JAN, JANTX, and JANTXV |
| MIL-PRF-19500-477 Revision L:2016 | Semiconductor Device, Diode, Silicon, Power Rectifier, Ultrafast Recovery, Encapsulated (Through-Hole and Surface Mount Packages), and Un-Encapsulated, Types 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, and 1N5811, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC |
| MIL-PRF-19500-537 Revision A:2015 | Transistor, NPN, Silicon, Power, High-Speed, Through-Hole and Stud Mount Packages, Types 2N6674, 2N6675, 2N6689, and 2N6690, Quality Levels JAN, JANTX, and JANTXV |
| MIL-PRF-19500-698 Revision G:2017 | TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, DEVICE TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H |
| MIL-PRF-19500-527 Revision F:2015 | TRANSISTOR, DARLINGTON, PNP, SILICON, POWER, ENCAPSULATED (THROUGH-HOLE MOUNT PACKAGE) TYPES 2N6648, 2N6649, AND 2N6650, QUALITY LEVELS JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-660 Revision E:2013 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF |
| MIL S 19500/521 : A | SEMICONDUCTOR DEVICE, DIODE. LIGHT EMITTING, GREEN TYPES JAN1N6094, JTX1N6094, JAN1N6611, (CLEAR LENS), JTX1N661 (CLEAR LENS), & PANEL MOUNTED ASSEMBLY TYPES JANM19500/52101 |
| MIL-PRF-19500-431 Revision E:2011 | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N4091, 2N4092, 2N4093, 2N4091UB, 2N4092UB, AND 2N4093UB, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-569 Revision A:2015 | TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6966, 2N6967, 2N6968, 2N6969, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-39016-54 Revision D:2006 | Relays, Electromagnetic, Established Reliability, Hermetically Sealed, 4PDT, Low Level to 2 Amperes (.150-Inch Terminal Spacing) with Internal Diode for Coil Transient Suppression and Reverse Polarity Protection |
| DSCC 08011 : A | SEMICONDUCTOR DEVICE, DIODE, SILICON, RF MIXER, TYPES 1N53B, 1N53BR, 1N53BM, AND 1N53BMR |
| MIL-PRF-19500-182 Revision J:2017 | TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N720A, 2N1893, AND 2N1893S, JANS, JAN, JANTX, JANTXV, JANHC, JANKC |
| MIL-PRF-19500-760 Revision A:2016 | TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7579, 2N7581, 2N7583, AND 2N7585, JANTXV, AND JANS |
| MIL-PRF-19500-262 Revision J:2016 | TRANSISTOR, NPN, SILICON, HIGH-POWER ENCAPSULATED (THROUGH-HOLE AND STUD MOUNT PACKAGES), TYPES 2N1722, AND 2N1724, QUALITY LEVELS JAN AND JANTX |
| MIL-S-19500-41 Revision B:1967 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, SWITCHING TYPES 2N425, 2N426, 2N427 |
| DSCC 87042 : E | RELAY, SOLID STATE, HERMETICALLY SEALED, ISOLATED, BI-DIRECTIONAL, 0.95 A, 60 V DC, ANALOG SIGNAL SWITCHING, SPST (N.O.), CMOS AND TTL CONTROL INPUTS |
| MIL S 19500/592 : B | SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR N-CHANNEL, SILICON TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, 2N7228U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-402 Revision G:2014 | TRANSISTOR, NPN, SILICON, POWER, DEVICE TYPE 2N3739, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-740 Base Document:2005 | Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Quad Transistor, N-Channel and P-Channel, Silicon Types 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR and F and JANSR and F (No S/S Document) |
| DSCC 87034 : D | RELAYS, SOLID STATE, OPTICALLY ISOLATED, HERMETICALLY SEALED, 240 MILLIAMPERES, +/-85 V DC BIDIRECTIONAL, ANALOG SIGNAL SWITCHING SPST (N.O.), CMOS AND TTL CONTROL INPUTS, FAST SWITCHING |
| MIL-PRF-28750 Revision J:2017 | RELAYS, SOLID STATE, GENERAL SPECIFICATION FOR |
| MIL-PRF-19500-505 Revision F:2015 | TRANSISTOR, PNP, DARLINGTON, SILICON, POWER, DEVICE TYPES 2N6286 AND 2N6287, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-632 Revision C:2014 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7399, 2N7400, 2N7401, AND 2N7402, JANSD AND R |
| MIL-PRF-19500-501 Revision F:2016 | TRANSISTOR, DARLINGTON, PNP, SILICON, POWER, ENCAPSULATED (THROUGH-HOLE MOUNT PACKAGE), TYPES 2N6051 AND 2N6052, QUALITY LEVELS JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-735 Revision B:2015 | Semiconductor Devices, Diode, Silicon, Schottky, Dual Diode, Common Cathode, Type1N7041andSingle DiodeType 1N7045, Quality LevelsJAN, JANTX, JANTXV,and JANS |
| MIL-PRF-19500-643 Revision C:2007 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6766 AND 1N6767, 1N6766R AND 1N6767R, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-39016-41 Revision E:2005 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, DPDT, LOW LEVEL TO 1 AMPERE, TERMINALS 0.100-INCH GRID PATTERN SENSITIVE, 60 MILLIWATTS, COIL OPERATE POWER AT 25 DEGREE C |
| MIL-PRF-19500-207 Revision D:2015 | TRANSISTOR, NPN, SILICON, SWITCHING, MEDIUM-POWER, THROUGH-HOLE MOUNT, TYPES 2N1479, 2N1480, 2N1481 AND 2N1482, QUALITY LEVEL JAN |
| MIL-PRF-19500-384 Revision H:2014 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON HIGH-POWER, TYPES 2N3584, 2N3585, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-287 Revision H:2016 | TRANSISTOR, NPN, SILICON, SWITCHING, THROUGH HOLE MOUNT PACKAGE, TYPE 2N3013, QUALITY LEVELS JAN AND JANTX |
| MIL-PRF-19500-455 Revision L:2015 | TRANSISTOR, NPN, SILICON, POWER SWITCHING, TYPES 2N5664, 2N5665, 2N5666, AND 2N5667, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-594 Revision C:2016 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND 1N6664R THROUGH 1N6666R, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-544 Revision J:2016 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N5152, 2N5154, 2N5152L, 2N5154L, 2N5152U3, 2N5154U3, JAN, JANTX, JANTXV, JANTXVF, JANTXVR, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANHCD, JANHCE, JANKCB, JANKCBF, JANKCD, JANKCE, JANKCDM, JANKCDD, JANKCDP, JANKCDL, JANKCDR, JANKCDF, JANKCDG, AND JANKCDH |
| MIL-PRF-19500-597 Revision G:2014 | Transistor, Quad, Field Effect, N-Channel, Silicon, 14-Pin Dual Inline Package, Type 2N7334, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC |
| MIL-PRF-19500-538 Revision G:2013 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2N6691, AND 2N6693, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCA, JANKCA, JANKCAM, JANKCAD, JANKCAP, JANKCAL, JANKCAR, JANKCAF, JANKCAG, AND JANKCAH |
| MIL-PRF-19500-437 Revision H:2008 | SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1, JAN, JANTX, JANTXV, JANHC, AND JANKC |
| MIL-PRF-19500-382 Revision L:2017 | Transistor, PNP, Silicon, Low-Power, Encapsulated (Through-Hole and Surface Mount), and Unencapsulated, Radiation Hardness Assurance, Device Types 2N2944A, 2N2945A, 2N2946A, Quality Levels: JAN, JANTX, JANTXV, JANS, JANHC,and JANKC |
| MIL-PRF-19500-558 Revision K:2015 | SEMICONDUCTOR DEVICE, UNITIZED, PNP, SILICON, SWITCHING, FOUR TRANSISTOR ARRAY, TYPES 2N6987, AND 2N6988, JAN, JANTX, JANTXV, JANS |
| MIL S 19500/424 : A | SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, 1N5186, 1N5187, 1N5188, 1N5190, JAN, JANTX, JANTXV |
| MIL-PRF-19500-228 Revision T:2015 | DIODE, SILICON, RECTIFIER, TYPES 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, JAN AND JANTX |
| MIL-PRF-19500-483 Revision D:2009 | SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, THREE PHASE, FULL WAVE BRIDGE RECTIFIER, TYPES M19500/483-01 THROUGH M19500/483-04, JANTX |
| MIL-PRF-19500-408 Revision K:2013 | Transistor, NPN, Silicon, High-Power, Types 2N3715 and 2N3716, Case Mount Through Hole Package, Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-99 Revision F:2015 | TRANSISTOR, NPN, SILICON, SWITCHING, MEDIUM-POWER, THROUGH-HOLE MOUNT, TYPES 2N696 AND 2N697, QUALITY LEVEL JAN |
| MIL-PRF-19500-279 Revision E:2009 | SEMICONDUCTOR DEVICE, DIODE, TYPES 1N3644, 1N3645, 1N3646, AND 1N3647, JAN AND JANTX |
| MIL-PRF-19500-412 Revision F:2013 | Transistor, NPN, Silicon, Power, Through-Hole Mount Package, Types 2N3846 and 2N3847, JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-767 Revision C:2016 | TRANSISTOR, NPN, SILICON, LOW-POWER, TYPE 2N5551, JAN, JANTX, JANTXV, JANS, JANSR, JANHC, AND JANKC |
| MIL-PRF-19500-433 Revision J:2015 | Transistor, PNP, Silicon, High-Power, Through-Hole Package, Types 2N4399 and 2N5745, JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-656 Revision B:2015 | DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE OR COMMON ANODE CENTER TAP, TYPES 1N6785 AND 1N6785R, JAN, JANTX, JANTXV AND JANS |
| MIL-PRF-19500-666 Base Document:1999 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7454U1, 2N7455U1 JANSD, R |
| MIL-PRF-19500-518 Revision D:2007 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3766, 2N3767, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-177 Revision H:2010 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON LOW-POWER TYPES 2N1131, 2N1131L, 2N1132, 2N1132L, JAN, JANTX, AND JANTXV |
| MIL S 19500/371 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPES 2N3902, TX2N3902, 2N5157, AND TX2N5157 |
| MIL S 19500/611 : (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING TYPES 2N7374, 2N7375, 2N7376& 2N7377, JANTS, JANTXV & JANS |
| MIL R 83536 : SUPP 1 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY |
| MIL-PRF-19500-199 Revision E:2016 | SEMICONDUCTOR DEVICE, DIODE, SILICON, FORWARD-VOLTAGE REGULATOR, AXIAL LEADED ROUND BODY PACKAGE, TYPE 1N816, QUALITY LEVEL JAN |
| MIL-PRF-19500-733 Revision F:2016 | TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, DEVICE, ENCAPSULATED (THROUGH-HOLE, SURFACE MOUNT, AND CARRIER BOARD PACKAGES), TYPES 2N7523, AND 2N7524, JANTXVR, F AND JANSR, F |
| MIL-PRF-19500-383 Revision B:1999 | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N5139A THROUGH 1N5148A, JAN, JANTX AND JANTXV |
| MIL-PRF-19500-688 Revision B:2012 | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7002, 2N7002T2, AND 2N7002UB, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-534 Revision H:2014 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N5002 AND 2N5004, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANKCB, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH |
| MIL-PRF-19500-509 Revision E:2014 | TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6338 AND 2N6341, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-708 Revision C:2016 | CONTROL-DISPLAY, OPTOELECTRONIC, DIODE, LIGHT EMITTING, SOLID STATE, RED, NUMERIC AND HEXADECIMAL, WITH ON BOARD DECODER/DRIVER, ENCAPSULATED (THROUGH-HOLE PACKAGE), TYPES 4N51, 4N52, 4N53, AND 4N54, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-684 Revision H:2016 | TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7472, 2N7473, AND 2N7474, JANTXVR AND JANSR |
| MIL-PRF-19500-380 Revision C:2014 | TRANSISTOR, NPN, SILICON, POWER, FOR POWER-SWITCHING APPLICATIONS, STUD MOUNTED CASE, TYPES 2N4865, 2N5250, AND 2N5251, QUALITY LEVELS JANTX, JANTXV, AND JANS |
| DSCC 04030 : 2005 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5926 |
| MIL-PRF-19500-169 Revision P:2014 | DIODE, SILICON, SWITCHING, TYPES 1N3070, 1N3070-1, 1N3070UR-1, 1N4938, 1N4938-1, 1N4938UR-1, JAN, JANTX, JANTXV, JANHC, AND JANKC |
| MIL-PRF-19500-724 Revision C:2011 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6920UTK4, 1N6921UTK4, 1N6922UTK4, 1N6920UTK4CS, 1N6921UTK4CS, 1N6922UTK4CS, 1N6920UTK4AS, 1N6921UTK4AS, AND 1N6922UTK4AS, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-755 Revision A:2017 | Transistor, Field Effect, N-Channel, Radiation Hardened,Silicon, Encapsulated (Through Hole Package), Types 2N7588, 2N7590, 2N7592, and2N7594, JANTXVR and F and JANSR, F, and G |
| MIL-PRF-19500-595 Revision K:2013 | SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-713 Revision D:2015 | TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549, AND 2N7550, JANTXVR, F AND JANSR, F |
| MIL-PRF-19500-486 Revision J:2015 | COUPLER, OPTOELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE, TYPES 4N22, 4N23, AND 4N24, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-739 Revision A:2013 | Semiconductor Device, Field Effect Radiation Hardened Quad Transistor, N-Channel and P-Channel, Silicon, Types 2N7518 and 2N7518U, JANTXVR, F, and JANSR, F (No S/S Document) |
| MIL-PRF-19500-474 Revision J:2016 | Semiconductor Devices, Unitized, Multiple Diode Arrays, Silicon Types 1N5768, 1N5770, 1N5772, 1N5774, 1N6100, 1N6101, 1N6496, 1N6506, 1N6507, 1N6508, 1N6509, 1N6510, and 1N6511 JAN, JANTX, JANTXV, and JANS |
| MIL-HDBK-814 Base Document:1994 | IONIZING DOSE AND NEUTRON HARDNESS ASSURANCE GUIDELINES FOR MICROCIRCUITS AND SEMICONDUCTOR DEVICES |
| MIL S 19500/429 : E | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615UL, 1N5617UL, 1N5619UL, 1N5621UL, 1N5623UL, 1N5615US, 1N5617US 1N5619US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL S 19500/156 : J | SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N935B, 1N937B, 1N938B, 1N939B, 1N940B, 1N935B-1, 1N937B-1, 1N938B-1, 1N939B, 1N940B-1, JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/412 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N3846, 2N3847, JANTX, JANTXV AND JANS |
| MIL-PRF-39016-21 Revision H:2013 | Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 1.0 Ampere (Sensitive, 60 Milliwatts) with Internal Diodes for Coil Transient Suppression and Polarity Reversal Protection |
| MIL-PRF-39016-15 Revision M:2014 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, DPDT, LOW LEVEL TO 1.0 AMPERE WITH INTERNAL DIODE FOR COIL TRANSIENT SUPPRESSION |
| MIL S 19500/533 : D | SEMICONDUCTOR DEVICE, DIODE, SILICON, ZENER, VOLTAGE REGULATOR, SOLID GLASS NONCAVITY CONSTRUCTION, TYPES 1N6309 THROUGH 1N6355; 1N6309US THROUGH 1N6336US; PLUS C AND D TOLERANCE SUFFIX; JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/486 : D | SEMICONDUCTOR DEVICE, COUPLER, OPTO-ELECTRONIC, SOLID STATE 4N22, 4N22A, 4N23, 4N23A, 4N24, 4N24A, NON-TX, TX AND TXV |
| MIL-S-19500-104 Revision C:1965 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650, 1N1124RA, 1N1126RA, 1N1128RA, 1N3649R, AND 1N3650R |
| MIL-S-19500-362 Base Document:1966 | SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER TYPES 1N1132 AND 1N1132R |
| BS EN 16602-60-13:2015 | Space product assurance. Requirements for the use of COTS components |
| MIL S 19500/348 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N3467, 2N3467L, 2N3468 AND 2N3468L JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/182 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON LOW POWER TYPES 2N720A, 2N1893, 2N1893S, JAN, JANTX AND JANTXV |
| MIL-S-19500-462 Revision A:1973 | SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON, POWER TYPES 2N5966 AND2N5968 |
| MIL-S-19500-189 Revision B:1972 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N1224 AND 2N1225 |
| MIL-S-19500-11 Revision C:1970 | SEMICONDUCTOR DEVICE TRANSISTOR NPN GERMANIUM SWITCHING TYPE 2N167A |
| MIL S 19500/399 : A (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPE 2N3960, JANTX AND JANTXV |
| MIL S 19500/612 : (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER, TYPE 2N7372, JANTX, JANTXV & JANS |
| MIL-S-19500-450 Revision A:1973 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER TYPES 2N5958, 2N5960, TX2N5958, TX2N5960 |
| MIL S 19500/358 : D | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATION, POWER 1N3305B TO 1N3350B,1N4549B TO 1N4554B,TX1N3305B TO TX1N3350B,TX1N4549B TO TX1N4554B, 1N3305RB TO 1N335ORB |
| MIL S 19500/597 : B | SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPE 2N7334 JANTX, JANTXV, JANS & JANC |
| MIL-STD-1772 Revision B:1990 | CERTIFICATION REQUIREMENTS FOR HYBRID MICROCIRCUITS FACILITIES AND LINES |
| MIL S 19500/603 : A | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7268, 2N7269 & 2N7270 JANTXVM, D, R, H & JANSM, D, R, H |
| MIL S 19500/510 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6249, 2N6250, 2N6251, NON-TX, TX AND TXV |
| MIL S 19500/157 : K | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N941B, 1N943B THROUGH 1N945B, -1, JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/354 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N2604 AND 2N2605 JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/117 : K | SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N962B THROUGH 1N992B, 1N962B-1 THROUGH 1N992B-1, JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/461 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH POWER TYPE 2N6211, TX2N6211, 2N6212, TX2N6312, 2N6213, TX2N6213 |
| MIL S 19500/503 : A | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, TX AND NON-TX TYPES 1N6073 THROUGH 1N6081 |
| MIL-S-19500-288 Base Document:1964 | TRANSISTOR, PNP, SILICON TYPE 2N2377 |
| MIL S 19500/159 : H | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE TYPES 1N821, 1N823, 1N825, 1N827, 1N829, AND 1N821-1, 1N823-1, 1N825-1, 1N827-1, 1N829-1, JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/548 : B | SEMICONDUCTOR DEVICE, COUPLER, OPTO-ELECTRONIC, SOLID STATE TYPE 4N47, 4N48 AND 4N49, JAN, JANTX, JANTXV AND JANS |
| MIL-S-19500-204 Revision F:1982 | SEMICONDUCTOR DEVICES, THYRISTOR, REVERSE BLOCKING, SILICON, TYPES 2N1792, 2N1793, 2N1795, 2N1797, 2N1798, 2N1799, 2N1800, 2N1805, 2N1806, 2N1910, 2N1911, 2N1913, 2N1915, 2N1916, 2N2031, JAN, JANTX, AND JANTXV |
| MIL S 19500/102 : A | SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH POWER TYPES 2N1016B, 2N1016C, AND 2N1016D |
| MIL S 19500/477 : B | SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, IN5804, 1N5806, 1N5807, 1N5809 AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5809US, AND 1N5811US, JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC |
| MIL-S-19500-30 Revision A:1970 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, ALLOY JUNCTION TYPE 2N123 |
| MIL-D-87157-2 Base Document:1987 | DISPLAYS, DIODE, LIGHT EMITTING, SOLID STATE, RED, ALPHANUMERIC, WITH ON BOARD DECODER DRIVER |
| 17/30318744 DC : 0 | BS ISO 20188 - SPACE SYSTEMS - PRODUCT ASSURANCE REQUIREMENTS FOR COMMERCIAL SATELLITES |
| MIL-STD-1276 Revision H:2013 | Leads for Electronic Component Parts |
| DSCC 90024 : C | SEMICONDUCTOR DEVICE, POWER SWITCHING REGULATOR ASSEMBLY |
| DSCC 01038 : B | SEMICONDUCTOR DEVICE, PIN DIODE, SILICON, TYPE 1N5719 |
| MIL-PRF-39016-36 Revision C:2006 | Relays, Electromagnetic, Established Reliability, Hermetically Sealed, 4PDT, Low Level to 2 Amperes (.150-Inch Terminal Spacing), Latching, with Internal Diodes for Coil Transient Suppression and Reverse Polarity Protection |
| NASA JSC HDBK 07-001 : 2012 | HIGH ENERGY/LET RADIATION EEE PARTS CERTIFICATION HANDBOOK |
| IEEE DRAFT 1554 : D15D 2005 | PRACTICE FOR INERTIAL SENSOR TEST EQUIPMENT, INSTRUMENTATION, DATA ACQUISITION, AND ANALYSIS |
| MIL S 19500/560 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPE 2N5339 JAN, JANTX AND JANTXV |
| MIL S 19500/574 : 0 | SEMICONDUCTOR DEVICE, DIODE, LIGHT-EMITTING TYPES JANTX 1N6497, 1N6498, 1N6499, 1N6503, 1N6504 AND 1N6505 |
| MIL-PRF-19500-512 Revision L:2015 | TRANSISTOR, PNP, SILICON, SWITCHING, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT) AND UNENCAPSULATED, RADIATION HARDNESS ASSURANCE, DEVICE TYPES 2N4029 AND 2N4033, QUALITY LEVELS: JAN, JANTX, JANTXV, JANS, JANHC AND JANKC |
| MIL-PRF-19500-636 Base Document:1997 | SEMICONDUCTOR DEVICE, DIODE, GALLIUM ARSENIDE, POWER RECTIFIER TYPE 1N6751, JANTX, JANTXV AND JANS |
| MIL S 19500/317 : F | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2369A, 2N3227, 2N449 JAN, JANTX, JANTXV AND JANS |
| MIL-S-19500-46 Revision B:1966 | SEMICONDUCTOR DEVICE,TRANSISTOR, PNP, GERMANIUM, POWER TYPES 2N574, 2N575, 2N575A, 2N1157A |
| MIL-S-19500-442 Base Document:1970 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HI-FREQUENCY POWER TYPES 2N5071, TX2N5071 |
| MIL-S-19500-388 Revision B:1992 | SEMICONDUCTOR DEVICE, TRANSISTOR, PN, SILICON, UNIJUNCTION TYPES 2N4947, 2N4948 AND 2N4949 JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/558 : B | SEMICONDUCTOR DEVICE, UNITIZED, PNP, SILICON, SWITCHING, FOUR TRANSISTOR ARRAY TYPES 2N6987, 2N6987U, AND 2N6988, JAN, JANTX, JANTXV, AND JANS |
| MIL-S-19500-56 Revision B:1969 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPES 2N416, AND 2N417 |
| MIL S 19500/169 : H | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N3070, 1N3070-1, 1N4938, 1N4938-1 JAN, JANTX, JANTXV, AND JANS |
| MIL-S-19500-465 Base Document:1972 | SEMICONDUCTOR DEVICE DIODE SILICON RECTIFIER ASSEMBLY HIGH VOLTAGE |
| MIL-PRF-19500-118 Revision M:2015 | DIODE, SILICON, TYPES 1N483B, 1N485B, 1N486B, 1N5194, 1N5194UR, 1N5194US, 1N5195, 1N5195UR, 1N5195US, 1N5196, 1N5196UR, AND 1N5196US, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-503 Revision H:2014 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, TYPES 1N6073 THROUGH 1N6081, JAN, JANTX, JANTXV, AND JANHC |
| MIL-PRF-39016-23 Revision F:2005 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, SPDT, LOW LEVEL TO 1.0 AMPERE WITH INTERNAL DIODE FOR COIL TRANSIENT SUPPRESSION |
| MIL-S-19500-175 Revision C:1968 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPES 2N650A, 2N651A, AND 2N652A |
| MIL-PRF-39016-19 Revision H:2005 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, DPDT, LOW LEVEL TO 1 AMPERE WITH INTERNAL DIODE FOR COIL TRANSIENT SUPPRESSION AND POLARITY REVERSAL PROTECTION, TERMINALS 0.100-INCH GRID PATTERN |
| MIL-P-48280 Base Document:1973 | POLARITY TEST PLUG |
| MIL S 19500/508 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON POWER TYPES 2N6437, TX2N6437, TXV2N6437, 2N6438, TX2N6438, TXV2N6438 JANTX AND JANTXV |
| MIL-PRF-19500-193 Revision F:2009 | SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N457, 1N458, AND 1N459, JAN |
| MIL-PRF-19500-771 Revision A:2013 | Semiconductor Device, Diode, Silicon, Schottky, Device Type 1N7059 (Dual, Center Tap) and 1N7060(Single), Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-614 Revision K:2015 | TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7380, AND 2N7381, JANTXV AND JANS |
| MIL-PRF-19500-718 Base Document:2003 | SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6950 THROUGH 1N6986, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-768 Revision B:2014 | SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N7066, 1N7067, 1N7068, 1N7066US, 1N7067US, AND 1N7068US, JAN, JANTX, JANTXV, AND JANS |
| MIL S 19500/466 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON POWER TYPES 2N5683, TX2N5683, 2N5684, JAN, JANTX, AND JANTXV |
| MIL S 19500/601 : A | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7261 AND 2N7262 JANTXVM, D,R,F,G AND H AND JANSM, D,R,F,G AND H |
| MIL-PRF-19500-376 Revision M:2016 | Transistor, NPN, Silicon, Low-Power, Types 2N2484, JAN, JANTX, JANTXV, JANS, JANHC, JANKC |
| MIL-PRF-19500-682 Revision C:2016 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY POWER RECTIFIER, SURFACE MOUNT, TYPE 1N6845U3, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-359 Revision K:2010 | SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, 1N4942, 1N4944, 1N4946, 1N4947, AND 1N4948, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-572 Revision D:2017 | LIGHT EMITTING DIODE, TYPES 1N6493, 1N6494, 1N6495, 1N6500, 1N6501, AND 1N6502, QUALITY LEVELS JAN AND JANTX |
| MIL-PRF-19500-758 Revision A:2015 | Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Device Types 2N7609U8 and 2N7609U8C, JANTXV and JANS (No S/S Document) |
| MIL-PRF-19500-565 Revision E:2007 | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6895, 2N6896, 2N6897, AND 2N6898, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-746 Revision C:2014 | Transistor, Field Effect, Radiation Hardened, N-Channel, Silicon, Surface Mount and Un-Encapsulated, Types 2N7587, 2N7589, 2N7591, and 2N7593, Quality Levels JANTXV, JANS, JANHC, and JANKC |
| MIL-PRF-19500-393 Revision M:2015 | TRANSISTOR, NPN, SILICON, POWER, RADIATION HARDENED, TYPES 2N3418, 2N3419, 2N3420, 2N3421, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC |
| MIL-PRF-19500-370 Revision H:2013 | TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPE 2N3442, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-615 Revision H:2017 | Transistor, Field Effect Radiation Hardened Encapsulated (Through-Hole and Surface Mount Package) P-Channel, Silicon, Types 2N7382 and 2N7383, JANTXV M, D, R, and F and JANS M, D, R, and F |
| MIL-PRF-19500-301 Revision M:2015 | TRANSISTOR, NPN SILICON, LOW-POWER, THROUGH-HOLE MOUNT, SURFACE MOUNT, AND UNENCAPSULATED DIE, TYPE 2N918, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-649 Revision B:2013 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, SCHOTTKY TYPE 1N6781, JAN, JANTX, JANTXV, AND JANS |
| MIL-HDBK-815 Base Document:1994 | DOSE-RATE HARDNESS ASSURANCE GUIDELINES |
| MIL-S-19500-73 Revision B:1960 | SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON SWITCHING TYPE 2N560 |
| DSCC 87019 : G | INDICATOR ASSEMBLIES, IR SECURE LIGHTING; RED, YELLOW, GREEN; PANEL SEALING |
| MIL PRF 19500/255 : 200AA | TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2221, 2N2222, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-547 Revision D:2011 | Transistor, Field Effect, N-Channel, Silicon, Power, Low-Threshold Logic Level, High Frequency, High Switching Speed, Device Types 2N6660 and 2N6661, Through Hole and Surface Mount Packages, Quality Levels JAN, JANTX, JANTXV,and JANS |
| MIL-PRF-19500-358 Revision G:2016 | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, STUD MOUNT PACKAGE, STANDARD AND REVERSE POLARITY, TYPES 1N3305B THROUGH 1N3350B AND 1N4549B THROUGH 1N4554B, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS |
| MIL-S-19500-451 Revision A:1973 | SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPES 2N5957, 2N5959, TX2N5957 AND TX2N5959 |
| MIL-PRF-6106 Revision P:2014 | Relays, Electromagnetic General Specification for |
| MIL S 19500/402 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N3739, JANTX & JANTXV |
| MIL-PRF-19500-211 Revision D:2012 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N3164, 1N3168, 1N3170, 1N3172, 1N3174, 1N3175, 1N3176, 1N3177, AND R, TYPES JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-773 Revision A:2015 | TRANSISTOR, DUAL NPN/PNP SILICON, DUAL TRANSISTOR, UNITIZED, NPN/PNP, SILICON, FOR LOW-POWER APPLICATIONS, TYPES M19500/773-01, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, AND JANSR |
| MIL-PRF-19500-453 Revision H:2016 | Transistor, NPN, Silicon, High-Frequency, Amplifier Type 2N5109 Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, JANKC |
| MIL-P-48189 Revision D:1992 | PROJECTILE, 155MM, HE, M692 AND M731 HOUSING, TIMING AND FUZING FOR |
| DSCC 01037 : B | SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER, 1N23WE, 1N23WEM, 1N23WEMR 1N23WG, 1N23WGM, AND 1N23WGMR |
| SAE ARP6328 | Guideline for Development of Counterfeit Electronic Parts; Avoidance, Detection, Mitigation, and Disposition Systems |
| I.S. EN 16602-60-15:2014 | SPACE PRODUCT ASSURANCE - RADIATION HARDNESS ASSURANCE - EEE COMPONENTS |
| ISO 20188:2018 | Space systems — Product assurance requirements for commercial satellites |
| SAE AS6171 | Test Methods Standard; General Requirements, Suspect/Counterfeit, Electrical, Electronic, and Electromechanical Parts |
| IEC TS 62686-1:2015 | Process management for avionics - Electronic components for aerospace, defence and high performance (ADHP) applications - Part 1: General requirements for high reliability integrated circuits and discrete semiconductors |
| ASTM F 1190 : 2018 : REDLINE | Standard Guide for Neutron Irradiation of Unbiased Electronic Components |
| IEC TS 62668-2:2016 | Process management for avionics - Counterfeit prevention - Part 2: Managing electronic components from non-franchised sources |
| DD IEC PAS 62686-1 : DRAFT JULY 2011 | PROCESS MANAGEMENT FOR AVIONICS - AEROSPACE QUALIFIED ELECTRONIC COMPONENTS (AQEC) - PART 1: GENERAL REQUIREMENTS FOR HIGH RELIABILITY INTEGRATED CIRCUITS AND DISCRETE SEMICONDUCTORS |
| PD IEC/TS 62668-2:2016 | Process management for avionics. Counterfeit prevention Managing electronic components from non-franchised sources |
| PD IEC/TS 62686-1:2015 | Process management for avionics. Electronic components for aerospace, defence and high performance (ADHP) applications General requirements for high reliability integrated circuits and discrete semiconductors |
| EN 16602-60-13:2015 | Space product assurance - Requirements for the use of COTS components |
| EN 16602-60-15:2014 | Space product assurance - Radiation hardness assurance - EEE components |
| MIL S 19500/452 : C | SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL, VOLTAGE REFERENCE TYPES 1N4565A TO 1N4574A AND 1N4565A-1 TO 1N4574A-1 JAN, JANTX, JANTXV AND JANS |
| MIL-PRF-19500-743 Revision C:2015 | TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F, G AND H AND JANSR, F, G AND H |
| MIL-PRF-83530 Revision C:2008 | RESISTOR, VOLTAGE SENSITIVE (VARISTOR, METAL-OXIDE), GENERAL SPECIFICATION FOR |
| MIL-PRF-19500-690 Revision A:2011 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N4148SCSP (NBN), JANHC AND JANKC |
| MIL-PRF-19500-606 Revision B:2004 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7291, 2N7293, 2N7295, AND 2N7297, JANTXVM, D, AND R, AND JANSM, D, AND R |
| MIL-PRF-19500-159 Revision P:2009 | SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F |
| MIL-PRF-19500-704 Revision F:2014 | Transistor,Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7485U3, 2N7486U3, 2N7487U3, and 2N7555U3 JANTXVR and JANSR |
| MIL-S-48685 Base Document:1987 | SAFETY AND ARMING DEVICE, GUIDED MISSILE - M143E1 ELECTRICAL PARTS AND ASSEMBLIES FOR |
| MIL-PRF-39016 Revision H:2017 | Relays, Electromagnetic, Established Reliability, General Specification for |
| BS IEC 60300-3.7 : 1999 | DEPENDABILITY MANAGEMENT - APPLICATION GUIDE - RELIABILITY STRESS SCREENING OF ELECTRONIC HARDWARE |
| MIL-PRF-19500-198 Revision F:2014 | SEMICONDUCTOR DEVICE, THYRISTORS, TYPES 2N1870A, 2N1871A, 2N1872A, AND 2N1874A, JAN |
| MIL-PRF-19500-116 Revision S:2012 | Semiconductor Device, Silicon, Switching, Types 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UBCA, 1N4148UBCC, 1N4148UBCCC, 1N4148UBD, 1N4148UBCD, 1N4148UB2,1N4148UB2R, 1N914, 1N914UR, 1N4531,and 1N4531UR, JAN, JANTX, JANTXV, JANHC, and JANKC |
| MIL-PRF-19500-354 Revision N:2017 | TRANSISTOR, PNP, SILICON, LOW-POWER, TYPES 2N2604, 2N2605, JAN, JANTX, JANTXV, AND JANS, JANHC, AND JANKC |
| MIL-PRF-19500-748 Revision B:2017 | TRANSISTOR, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505, JANTX, JANTXV AND JANS |
| MIL-PRF-19500-525 Revision F:2013 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6546, 2N6546T1, 2N6546T3, 2N6547, 2N6547T1, AND 2N6547T3 JAN, JANTX, JANTXV6 AND JANHC |
| MIL-PRF-19500-624 Revision E:2012 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N7370, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-717 Base Document:2005 | SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036AUEG THROUGH 1N6072AUEG, 1N6036AUEJ THROUGH 1N6072AUEJ, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-557 Revision M:2017 | TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-423 Revision H:2017 | TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N5581 AND 2N5582, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-587 Revision E:2014 | Semiconductor Device, Diode, Silicon, Rectifier, Device Types 1N6661, 1N6662, and 1N6663, (Through Hole and Surface Mount Packages) Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-607 Revision B:2004 | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL AND P-CHANNEL, SILICON, TYPE 2N7337 JAN, JANTX, JANTXV, JANS, AND JANHC |
| MIL-PRF-19500-357 Revision N:2015 | TRANSISTOR, PNP, RADIATION HARDENED, SILICON, AMPLIFIER, TYPES 2N3634 THROUGH 2N3637, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC |
| MIL-PRF-19500-750 Revision A:2014 | TRANSISTOR, FIELD EFFECT N-CHANNEL, SILICON, SURFACE MOUNT PACKAGE, TYPE 2N7507 QUALITY LEVELS JANTX, JANTXV AND JANS |
| MIL-PRF-19500-429 Revision N:2014 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-685 Revision H:2016 | TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JANSR |
| MIL S 19500/411 : G | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 1N5415 THROUGH 1N5420, 1N5415US THROUGH 1N5420US, JAN, JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR AND JANSH |
| MIL-PRF-19500-495 Revision H:2015 | SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, NPN, SILICON TYPES 2N5793, 2N5794, JAN, JANTX, JANTXV, JANS |
| MIL-PRF-19500-716 Base Document:2005 | SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555UEG THROUGH 1N5558UEG, 1N5555UEJ THROUGH 1N5558UEJ, 1N5629AUEG THROUGH 1N5665AUEG, 1N5629AUEJ THROUGH 1N5665AUEJ, 1N5907UEG, 1N5907UEJ JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-576 Revision E:2016 | SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER, FAST RECOVERY, TYPES 1N6520 THROUGH 1N6527, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-766 Revision B:2016 | TRANSISTOR, PNP, SILICON, LOW-POWER, TYPE 2N5401, JANS, JANSR, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-510 Revision J:2013 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N6249, 2N6249T1, 2N6249T3, 2N6250, 2N6250T1, 2N6250T3, 2N6251, 2N6251T1, 2N6251T3, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANKCB, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH |
| MIL-PRF-19500-180 Revision E:2014 | TRANSISTOR, NPN, SILICON, MEDIUM-POWER, THROUGH-HOLE MOUNT PACKAGE, TYPES 2N1483, 2N1484, 2N1485, AND 2N1486, QUALITY LEVELS JAN, JANTX, JANTXV |
| MIL-E-63511 Base Document:1982 | ELECTRONIC-MCD ASSEMBLY FOR MINE, ANTI-TANK: BLU 91/B |
| MIL-C-64030 Base Document:1986 | CONTROL INDICATOR FOR DISPENSER AND MINES GROUND M131 |
| MIL-STD-750-5 Base Document:2012 | HIGH RELIABILITY SPACE APPLICATION TEST METHODS FOR SEMICONDUCTOR DEVICES - PART 5: TEST METHODS 5000 THROUGH 5999 |
| MIL-PRF-83536 Revision F:2017 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, 25 AMPERES AND BELOW, GENERAL SPECIFICATION FOR |
| MIL-PRF-19500-605 Revision E:2016 | Transistor, Field Effect, Radiation Hardened (Total Dose Only) N-Channel, Silicon, Types 2N7292, 2N7294, 2N7296, and 2N7298, JANTXVM, D, R, Hand JANSM, D, R and H (No S/S Document) |
| MIL-PRF-19500-502 Revision H:2016 | TRANSISTOR, DARLINGTON, NPN, SILICON, POWER, ENCAPSULATED (THROUGH-HOLE MOUNT PACKAGE) TYPES 2N6058 AND 2N6059, QUALITY LEVELS JAN, JANTX, AND JANTXV |
| MIL-PRF-39016-29 Revision H:2017 | Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 1.0 Ampere (Latching) with Internal Diodes for Coil Transient Suppression |
| MIL-PRF-19500-144 Revision T:2016 | Semiconductor Device, Diode, Silicon, Switching, Types 1N4454-1, 1N4454UR-1, 1N4454UB, 1N4454UBCA, 1N4454UBCC, 1N4454UBD, 1N3064, 1N4532, JAN, JANTX, JANTXV, JANHC, and JANKC |
| MIL-PRF-19500-700 Revision C:2014 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7494U5, 2N7495U5, AND 2N7496U5, JANTXVR, F, G, AND H, AND JANSR, F, G, AND H |
| MIL-PRF-19500-644 Revision B:2016 | Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Through Hole Mount Package, Types 1N6768 Through 1N6771, Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL S 19500/488 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N5671 AND 2N5672, JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/240 : F | SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N645-1, 1N647-1, 1N649-1, 1N-645UR-1, AND 1N649UR-1 JAN, JANTX AND JANTXV |
| MIL-P-11268 Revision L:1983 | PART, MATERIALS, AND PROCESSES USED IN ELECTRONIC EQUIPMENT |
| MIL-S-19500-254 Revision B:2005 | SEMICONDUCTOR DEVICE, DIODE, SILICON, TYPES 1N1147 AND 1N1149, JAN |
| MIL-PRF-19500-441 Revision L:2015 | Transistor, PNP, Silicon, Power, Encapsulated (Through Hole and Surface Mount), and Unencapsulated, Radiation Hardness Assurance, Device Types 2N3740 and 2N3741 Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC |
| MIL-PRF-19500-435 Revision N:2016 | SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, ENCAPSULATED (AXIAL LEAD THROUGH-HOLE AND SURFACE MOUNT PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 1N4099 THROUGH 1N4135, 1N4614 THROUGH 1N4627, C AND D TOLERANCE SUFFIX DEVICES, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-37 Revision F:2016 | TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N333, 2N335, 2N336, JAN |
| MIL-PRF-39016-12 Revision H:2016 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, DPDT, LOW LEVEL TO 1.0 AMPERE (LATCHING) |
| MIL-PRF-39016-35 Revision E:2017 | Relays, Electromagnetic, Established Reliability, Hermetically Sealed, 4 PDT Low Level to 2 Amperes (0.150-Inch Terminal Spacing), Latching, with Internal Diodes for Coil Transient Suppression |
| MIL-PRF-19500-260 Revision M:2014 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A, AND AR VERSIONS, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650, 1N1124RA, 1N1126RA, 1N1128RA, 1N3649R, AND 1N3650R, JAN ONLY |
| MIL-PRF-19500-466 Revision D:2016 | TRANSISTOR, PNP, SILICON, POWER, THROUGH HOLE, TYPES 2N5683 AND 2N5684, QUALITY LEVELS JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-520 Revision F:2016 | Light Emitting Diode, Yellow, Through-Hole Mountand Panel Mount Assembly, Clearand Diffused Lens, Types 1N6093, 1N6610, M19500/52001, M19500/52002, M19500/52003and M19500/52004, Quality Levels JANand JANTX |
| MIL-PRF-19500-715 Base Document:2009 | Semiconductor Device, Field Effect Transistor, Encapsulated Plastic, N-Channel, Silicon, Type 2N7563, 2N764, 2N7565, JAN, JANTX, and JANTXV |
| MIL-PRF-19500-407 Revision F:2018 | Transistor, NPN, Silicon, Power, Type 2N3055, Case Mount Through Hole, Quality Levels JAN, JANTX, and JANTXV |
| MIL-PRF-19500-108 Revision L:2011 | SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS), SILICON, TYPES 2N682, 2N683, 2N685 THROUGH 2N692, 2N692A, 2N5206, JAN AND JANTX |
| MIL-PRF-19500-434 Revision F:2017 | Semiconductor Device, Diode, Silicon, Unipolar Transient Voltage Suppressor, Type 1N5610 Through 1N5613, Through-Hole and Surface Mount Packages, Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-461 Revision G:2014 | Transistor, PNP, Silicon, High-Power, Type 2N6211, 2N6212, 2N6213, 2N6213A, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC |
| MIL-PRF-19500-315 Revision H:2017 | TRANSISTOR, NPN, SILICON, POWER TYPES 2N2880, 2N3749, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-545 Revision L:2016 | TRANSISTOR, PNP, SILICON, POWER, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 2N5151, 2N5153, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-38534 Revision K:2017 | HYBRID MICROCIRCUITS, GENERAL SPECIFICATION FOR |
| MIL-PRF-19500-603 Revision L:2016 | TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY), N-CHANNEL, SILICON, (THROUGH-HOLE, SURFACE MOUNT, AND CARRIER BOARD PACKAGES), TYPES 2N7268, 2N7269, 2N7270, 2N7394, JANTXVR, F, G, H; JANSR, F, G, AND H |
| MIL-PRF-19500-551 Revision H:2017 | Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor Types 1N6461 Through 1N6468, 1N6461US Through 1N6468US, and 1N6461URS Through 1N6468URS, Quality Levels JAN, JANTX, and JANTXV |
| MIL-PRF-39016-42 Revision E:2006 | Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 1.0 Ampere with Internal Diode for Coil Transient Suppression, Terminals .100-Inch Grid Pattern (Sensitive 60 Milliwatts, Coil Operate Power at 25 Degree C) |
| MIL-PRF-19500-463 Revision L:2016 | SEMICONDUCTOR DEVICE, DIODE, SILICON, CURRENT REGULATOR, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), AND UN-ENCAPSULATED (DIE), TYPES 1N5283 THROUGH 1N5314, AND, 1N7048 THROUGH 1N7055, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-692 Revision B:2015 | TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N7515, 2N7516, AND 2N7517, JANTXV AND JANS |
| MIL-PRF-19500-371 Revision H:2013 | Transistor, NPN, Silicon, High Power, Types 2N3902 and2N5157, JAN, JANTX, and JANTXV |
| MIL-PRF-19500-469 Revision E:2014 | SEMICONDUCTOR DEVICE, SILICON, 69E. HIGH-POWER, SINGLE PHASE, FULL WAVE BRIDGE RECTIFIER, TYPES M19500/469-01, -02, -03, -04, -05, JANTX AND JANTXV |
| MIL-PRF-19500-728 Revision C:2010 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N3724, 2N3724L, 2N3724UB, 2N3725, 2N3725L, 2N3725UB, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANHC, AND JANKC |
| MIL-PRF-19500-670 Revision B:2017 | SEMICONDUCTOR DEVICE, DIODE, SILICON, BARRIER RECTIFIER, SCHOTTKY, TYPES 1N6826, 1N6826US, 1N6831 AND 1N6831US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-683 Revision F:2016 | TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPE 2N7467, JANTXVR, F, G, AND H AND JANSR, F, G, AND H |
| MIL-PRF-19500-567 Revision E:2012 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6492, 1N6492U4, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-736 Revision A:2012 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N7572, 2N7573, AND 2N7574, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-730 Revision C:2014 | Semiconductor Device, Diode, Silicon, Schottky, Dual, Center Tap, Types 1N7037CCU1, 1N7043CAT1, 1N7043CCT1, JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-596 Revision K:2013 | SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, AND 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-456 Revision E:2009 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPES 2N5302 AND 2N5303, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-263 Revision B:2015 | TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVELS JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-711 Revision A:2014 | Semiconductor Device, Field Effect Transistors, N-Channel, Silicon Types 2N7541T3, 2N7542U3, 2N7543T3 and 2N7544U3 JAN, JANTX, JANTXV, JANHC and JANKC |
| MIL-PRF-55310 Revision E:2006 | OSCILLATOR, CRYSTAL CONTROLLED, GENERAL SPECIFICATION FOR |
| MIL-PRF-19500-443 Revision B:1999 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N5719 JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-290 Revision P:2011 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES, 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, AND 2N2905AL, JAN, JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, AND JANSH |
| MIL-PRF-19500-696 Revision B:2017 | TRANSISTOR, FIELD EFFECT, PLASTIC, N-CHANNEL, SILICON, TYPE 2N7537, 2N7537A, 2N7552, 2N7553, 2N7554, JAN AND JANTX |
| MIL-PRF-19500-612 Revision F:2016 | TRANSISTOR, PNP, SILICON, POWER, THROUGH HOLE, TYPE 2N7372, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-445 Revision D:1999 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N5712, 1N5712-1, AND 1N5712UR-1 JAN, JANTX, JANTXV, JANJ, JANS, JANHC AND JANKC |
| MIL-PRF-19500-430 Revision D:2017 | TRANSISTORS, DUAL FIELD EFFECT, N-CHANNEL, SILICON TYPES 2N5545, 2N5546, AND 2N5547, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-687 Revision D:2016 | TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH-HOLE MOUNT PACKAGE), TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R |
| DSCC 00005 : B | SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER, 1N21WE, 1N21WEM, 1N21WEMR, 1N21WG, 1N21WGM, AND 1N21WGMR |
| MIL S 19500/502 : B | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER TYPES 2N6058 AND 2N6059 JAN, JANTX AND JANTXV |
| MIL S 19500/577 : LATEST | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE TYPES IN6528 THROUGH IN6535 JANTX, JANTXV AND JANS |
| MIL-PRF-39016-55 Revision B:2006 | Relay, Electromagnetic, Established Reliability, DPDT, Low Level to 2 Amperes (.200-Inch Terminal Spacing), with Internal Diode for Coil Transient Suppression |
| MIL S 19500/349 : C (2) | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPES 2N3506, 2N3506A, 2N3506L, 2N3507, AND 2N3507A, 2N3507L, JAN, JANTX, JANTXV AND JANS |
| MIL-PRF-39016-16 Revision G:2004 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, DPDT, LOW LEVEL TO 1.0 AMPERE (SENSITIVE, 60 MILLIWATTS) WITH INTERNAL DIODE FOR COIL TRANSIENT SUPPRESSION |
| BS PD ES 59008-4.3 : 2000 | DATA REQUIREMENTS FOR SEMICONDUCTOR DIE - PART 4-3: SPECIFIC REQUIREMENTS AND RECOMMENDATIONS - THERMAL |
| MIL-PRF-39016-9 Revision K:2016 | Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 1.0 Ampere |
| MIL-PRF-19500-630 Revision F:2012 | SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, 2N7389U5, AND 2N7390U, 2N7390U5, JANTXV, R, AND F AND JANS, R, AND F |
| MIL-PRF-19500-560 Revision L:2014 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPE 2N5339 AND 2N5339U3, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC |
| MIL-PRF-19500-609 Revision L:2016 | Semiconductor Device, Diode, Silicon, Switching, Axial Leaded and Surface Mount Packages, Types 1N6639, 1N6640, 1N6641, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC |
| MIL-PRF-19500-744 Revision E:2016 | TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7616, QUALITY LEVELS JANTXV AND JANS |
| MIL-PRF-19500-347 Revision B:2014 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES: 2N3253, 2N3253S, 2N3444, 2N3444S, JAN AND JANTX |
| MIL-PRF-19500-337 Revision L:2013 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4153-1, 1N4153UR-1, 1N4153UB, 1N4153UBCA, 1N4153UBCC, 1N4153UBD, 1N4153UBN, 1N4153UBND, 1N4534, AND 1N4534UB, JAN, JANTX, JANTXV, JANHC, AND JANKC |
| MIL-PRF-19500-251 Revision T:2015 | TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2218, AND 2N2219, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-439 Revision H:2014 | Transistor, NPN, Silicon, High-Power, Types 2N5038and 2N5039, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC |
| MIL-PRF-19500-157 Revision T:2009 | SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H |
| MIL-PRF-19500-415 Revision C:2016 | TRANSISTOR, NPN, SILICON, HIGH POWER, STUD MOUNT CASE, TYPES 2N2812 AND 2N2814, QUALITY LEVELS JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-600 Revision B:1997 | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7229 AND 2N7230 JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-374 Revision F:2014 | TRANSISTOR, NPN, SILICON, POWER, TYPES 2N3996 THROUGH 2N3999, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-580 Revision D:2015 | TRANSISTOR, PNP, SILICON AMPLIFIER, TYPES 2N4234, 2N4235, AND 2N4236, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-647 Revision E:2013 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6778 AND 1N6779, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-611 Revision A:1997 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING TYPES 2N7374, 2N7375, 2N7376, AND 2N7377, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-586 Revision M:2017 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT) AND UNENCAPSULATED, TYPES 1N5817-1, 1N5819-1, AND 1N6761-1, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-757 Revision C:2014 | TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH HOLE AND SURFACE MOUNT, TYPES 2N7624 AND 2N7625 QUALITY LEVELS JANTXV AND JANS |
| MIL-PRF-19500-295 Revision F:2012 | SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB |
| MIL-PRF-19500-375 Revision K:2017 | TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3822, AND 2N3823, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-117 Revision R:2008 | SEMICONDUCTOR DEVICES, SILICON, VOLTAGE REGULATOR, TYPES 1N962B-1 THROUGH 1N992B-1, AND 1N962BUR-1 THROUGH 1N992BUR-1, 1N962C-1 THROUGH 1N992C-1, AND 1N962CUR-1 THROUGH 1N992CUR-1, AND 1N962D-1 THROUGH 1N992D-1, 1N962DUR-1 THROUGH 1N992DUR-1, JAN, JANTX, JANTXV, JANHC, AND JANKC |
| MIL-PRF-19500-369 Revision J:2015 | TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3441, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-552 Revision H:2016 | Semiconductor Device, Diode, Silicon, Unipolar Transient Voltage Suppressor, Types 1N6469 Through 1N6476, Through-Hole and Surface Mount Packages, Quality Levels JAN, JANTX, and JANTXV |
| MIL-PRF-19500-672 Base Document:2001 | SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, TYPE 2N2222AUE1 JAN, JANTX, JANJ |
| MIL-PRF-19500-522 Revision B:2017 | Transistor, NPN, Silicon, High Frequency Types 2N6603 and 2N6604, JAN, JANTX, and JANTXV |
| MIL-PRF-19500-514 Revision D:2013 | TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6274 AND 2N6277, JAN, JANTX, AND JANTXV |
| MIL S 19500 : J | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
| MIL-PRF-19500-635 Revision A:2000 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6710 THROUGH 1N6716 AND 1N6710R THROUGH 1N6716R JANTX, JANTXV, AND JANS AND POWER RECTIFIER, STANDARD RECOVERY, TYPES 1N6710B THROUGH 1N6716B AND 1N6710BR THROUGH 1N6716BR, JANTX, JANTXV AND JANS |
| MIL-PRF-19500-762 Revision A:2015 | SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, TYPE 1N7062CCT1, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-343 Revision M:2016 | RF Transistor, NPN, Silicon, Low Power, Encapsulated (Through-Hole and Surface Mount), and Unencapsulated, Radiation Hardness Assurance, Types 2N2857, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC |
| MIL-PRF-19500-336 Revision N:2016 | Transistor, Dual, Unitized, PNP, Radiation Hardened, Silicon, Types 2N3810, and 2N3811, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC |
| MIL-PRF-19500-420 Revision N:2016 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), TYPES 1N5550 THROUGH 1N5554, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC |
| MIL-PRF-19500-535 Revision F:2016 | TRANSISTOR, PNP, SILICON, POWER, THROUGH HOLE, TYPES 2N5003 AND 2N5005, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-464 Revision H:2015 | TRANSISTOR, NPN, SILICON, POWER, DEVICE TYPES 2N5685 AND 2N5686, JAN, JANTX, AND JANTXV |
| MIL-PRF-19500-725 Revision C:2011 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6930UTK1, 1N6931UTK1, 1N6932UTK1, 1N6930UTK1CS, 1N6931UTK1CS, 1N6932UTK1CS, 1N6930UTK1AS, 1N6931UTK1AS, AND 1N6932UTK1AS, JANTX, JANTXV, AND JANS |
| DOD-D-24620-1 Base Document:1984 | DETECTOR, PIN, FIBER OPTIC 820-910 NANOMETERS WAVELENGTH RANGE GLASS PIGTAILED TYPE |
| MIL-PRF-19500-763 Revision A:2015 | Semiconductor Device, Diode, Silicon, Schottky, Dual, Common Cathode, Encapsulated (Through-Hole), Type 1N7070, Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-726 Revision E:2017 | Semiconductor Device, Diode, Silicon, Schottky Rectifier, Types 1N6940, 1N6941, 1N6942 JANTX, JANTXV, and JANS |
| MIL-PRF-19500-585 Revision L:2017 | DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, AXIAL LEAD THROUGH-HOLE AND SURFACE MOUNT PACKAGES, 1N6620 THROUGH 1N6625, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-747 Revision B:2013 | Semiconductor Device, Field Effect Transistor, N-Channel, Radiation Hardened, Silicon, Type 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, and JANSH (No S/S Document) |
| DSCC 99009 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5241 |
| MIL-PRF-39016-17 Revision J:2017 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, DPDT, LOW LEVEL TO 1 AMPERE TERMINALS 0.100-INCH GRID PATTERN |
| MIL S 19500/437 : C | SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE, VOLTAGE REGULATOR TYPES 1N5518B, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1, JAN, JANTX, JANTXV, JANHC AND JANKC |
| MIL-PRF-19500-124 Revision M:2016 | SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, CASE MOUNT STUD PACKAGE, STANDARD AND REVERSE POLARITY, TYPES 1N2970B THROUGH 1N2977B, 1N2979B, 1N2980B, 1N2982B, 1N2984B THROUGH 1N2986B, 1N2988B THROUGH 1N2993B, 1N2995B, 1N2997B, 1N2999B THROUGH 1N3005B, 1N3007B, 1N3008B, 1N3009B, 1N3011B, 1N3012B, 1N3014B, 1N3015B, 1N3993A THROUGH 1N3998A, QUALITY LEVELS JAN, |
| MIL-PRF-19500-732 Revision E:2016 | TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH-HOLE AND SURFACE MOUNT, TYPES 2N7519 AND 2N7520, QUALITY LEVELS JANTXV AND JANS |
| MIL-PRF-19500-583 Revision C:2015 | Transistor, NPN, Silicon Amplifier, Types 2N5681and 2N5682, JAN, JANTX, JANTXV, JANHC, and JANKC |
| MIL-PRF-19500-694 Revision B:2015 | TRANSISTOR, NPN, PLASTIC, SILICON, SWITCHING, TYPE 2N3700UE1, JAN AND JANTX |
| MIL-PRF-39016-43 Revision E:2005 | Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 1.0 Ampere, with Internal Diodes for Coil Transient Suppression, and Polarity Reversal Protection Terminals 0.100-Inch Grid Pattern (Sensitive, 60 Milliwatts, Coil Operate Power at 25 Degrees C) |
| MIL-PRF-19500-764 Revision A:2015 | Semiconductor Device, Diode, Silicon, Schottky, Dual, Common Cathode, Encapsulated (Through-Hole), Type 1N7071, Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL S 19500/500 : B (2) | SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629A THROUGH 1N5665A JAN, JANTX, JANTXV AND JANS |
| MIL-PRF-19500-674 Base Document:2001 | SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, LOW NOISE TYPE 2N2484UE1 JAN, JANTX, JANJ |
| MIL-PRF-19500-686 Base Document:2001 | SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N2907AUE1 JAN, JANTX, JANJ |
| MIL-PRF-19500-737 Revision A:2007 | Semiconductor Device, Diode, Silicon, Schottky, Dual, Center Tap, Types 1N7039 and 1N7047,(Flange Mount and Surface Mount Packages) Quality Levels JANTX, JANTXV, and JANS |
| MIL-PRF-19500-707 Revision C:2015 | TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL, SILICON, TYPES 2N7500U5, 2N7501U5, AND 2N7502U5, JANTXVR AND JANSR |
| MIL-PRF-19500-323 Revision P:2016 | TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N3250A, 2N3251A, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| DSCC 04029 : 2005 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5927 |
| MIL-S-19500-425 Base Document:1969 | SEMICONDUCTOR DEVICE, TRANSISTOR, PN, SILICON, UNIJUNCTION JAN2N5431, AND JANTX2N5431 |
| MIL-PRF-19500-127 Revision W:2012 | SEMICONDUCTOR DEVICES, SILICON, VOLTAGE REGULATOR, TYPES 1N4370A-1 THROUGH 1N4372A-1 AND 1N746A-1 THROUGH 1N759A-1, 1N4370AUR-1 THROUGH 1N4372AUR-1 AND 1N746AUR-1 THROUGH 1N759AUR-1, 1N4370C-1 THROUGH 1N4372C-1 AND 1N746C-1 THROUGH 1N759C-1, 1N4370CUR-1 THROUGH 1N4372CUR-1 AND 1N746CUR-1 THROUGH 1N759CUR-1, 1N4370D-1 THROUGH 1N4372D-1 AND 1N746D-1 THROUGH 1N759D-1, 1N4370DUR-1 THROU |
| MIL-PRF-19500-241 Revision R:2015 | Semiconductor Device, Diode, Silicon, Low Leakage, Controlled Forward Voltage, Types 1N3595, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC |
| MIL-PRF-19500-638 Revision B:2004 | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPE 2N7410, JANSD AND JANSR |
| MIL-PRF-19500-452 Revision J:2009 | SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H, JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H |
| MIL-PRF-19500-745 Revision D:2012 | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF |
| MIL-PRF-19500-312 Revision F:2015 | TRANSISTOR, NPN, SILICON, SWITCHING, THROUGH-HOLE PACKAGE AND UNENCAPSULATED DIE, TYPE 2N708, QUALITY LEVELS JAN, JANTX, AND JANHC |
| MIL-PRF-19500-695 Base Document:2001 | SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N4033UE1 JAN, JANTX, JANJ |
| MIL S 19500/498 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER TYPES 2N6306, TX2N6306, TXV2N6306, 2N6308, TX2N6308, TXV2N6308 |
| MIL-PRF-19500-399 Revision G:2016 | TRANSISTOR, NPN, SILICON, SWITCHING TYPE 2N3960 AND 2N3960UB JAN, JANTX, JANTXV, JANHC, JANKC |
| MIL-PRF-19500-598 Revision C:2014 | Transistor, Quad, Field Effect, P-Channel and N-Channel, Silicon, 14-Pin Dual Inline Package, Type 2N7336, Quality Levels JAN, JANTX, JANTXV, and JANS |
| MIL-PRF-19500-663 Revision G:2017 | TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H |
| MIL-PRF-19500-268 Revision D:2015 | TRANSISTOR, NPN, SILICON, HIGH-SPEED SWITCHING THROUGH-HOLE MOUNT, TYPE 2N2481, QUALITY LEVELS JAN AND JANTX |
| MIL-PRF-19500-592 Revision H:2017 | TRANSISTOR, REPETITIVE AVALANCHE, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-398 Revision L:2015 | Transistor, NPN, Silicon, High-Frequency, Encapsulated (Through-Hole and Surface Mount) and Uncapsulated, Radiation Hardness Assurance, Device Type 2N3866, Quality Levels: JAN, JANTX, JANTXV, JANS, JANHC, and JANKC |
| MIL-PRF-19500-566 Revision D:2018 | Transistor, Field Effect, N-Channel, Silicon, Logic Level, Types 2N6902, and 2N6904 JAN, JANTX, JANTXV and JANS |
| MIL-PRF-19500-424 Revision C:2014 | SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, 1N5186, 1N5187, 1N5188, AND 1N5190, JAN, JANTX, AND JANTXV |
| MIL S 19500/620 : B | SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N5822 & 1N5822US, JANTX, JANTXV & JANC |
| MIL S 19500/302 : A | SEMICONDUCTOR DEVICE, TRANSISTOR NPN SILICON LOW POWER TYPES 2N2708 |
| MIL S 19500/393 : A | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER TYPES 2N3418, 2N3418S, 2N3419, 2N3419S, 2N3421, 2N3421S JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-120 Revision D:2015 | TRANSISTOR, NPN, SILICON, SWITCHING, LOW-POWER, THROUGH-HOLE MOUNT, TYPE 2N706, QUALITY LEVEL JAN |
| MIL-PRF-19500-428 Revision H:2011 | SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A AND 2N4416AUB, JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-19500-548 Revision J:2015 | COUPLER, OPTOELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE, THROUGH HOLE AND SURFACE MOUNT, TYPES 4N47, 4N48, AND 4N49, QUALITY LEVELS: JAN, JANTX, JANTXV, AND JANS |
| MIL-PRF-39016-10 Revision G:2004 | RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, SPDT, LOW LEVEL TO 1.0 AMPERE (SENSITIVE, 40 MILLIWATTS, COIL OPERATE POWER AT 25 DEGREES C) |
| MIL S 19500/369 : B | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N3441 AND TX2N3441 |
| MIL-PRF-19500-703 Revision E:2016 | TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7479, 2N7480, AND 2N7481, JANTXVR, F, G, AND H AND JANSR, F, G, AND H |
| MIL-PRF-32085 Base Document:2001 | RELAYS, ELECTROMAGNETIC, 270 V DC, ESTABLISHED RELIABILITY, GENERAL SPECIFICATION FOR |
| MIL-PRF-19500-225 Revision K:2011 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, TYPES 2N1711, 2N1711S, 2N1890, AND 2N1890S, JAN, JANTX, AND JANTXV |
| MIL-STD-750-4 Base Document:2012 | Diode Electrical Test Methods for Semiconductor Devices Part 4: Test Methods 4000 Through 4999 |
| MIL-PRF-19500-669 Base Document:2000 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SURFACE MOUNT POWER RECTIFIER, TYPES 1N6804UEG2 THROUGH 1N6810UEG2 JAN, JANTX AND JANTXV |
| MIL-P-85576 Revision B:1987 | POWER SUPPLY PP-2581C/A |
| MIL S 19500/241 : F (1) | SEMICONDUCTOR DEVICE, DIODE, SILICON SWITCHING TYPES 1N3595 AND TX1N3595 |
| MIL S 19500/323 : D | SEMICONDUCTOR DEVICE, TRANSISTOR, JPNP, SILICON, SWITCHING TYPES 2N3250A AND 2N3251A JAN, JANTX, JANTYXV, AND JANS |
| MIL-S-19500-202 Revision A:1962 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIERS, TYPES JAN 1N538M JAN 1N540M AND JAN 1N547M |
| MIL S 19500/570 : A | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON LOGIC-LEVEL, TYPES 2N6901 & 2N6903 JANTX, JANTXU & JANS |
| MIL-PRF-19500-620 Revision K:2016 | SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N5822, 1N6864, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| MIL-PRF-19500-691 Base Document:2001 | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N4148UE2 JAN, JANTX, AND JANJ |
| MIL-PRF-19500-446 Revision E:2008 | SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, SINGLE PHASE, FULL WAVE BRIDGE RECTIFIER, TYPES SPA25, SPB25, SPC25, AND SPD25 JAN, JANTX, AND JANTXV |
| MIL-S-19500-205 Revision B:1990 | SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, LOW LEVEL, FORWARD-VOLTAGE-REFERENCE TYPE 1N3287 JAN, JANTX, AND JANTXV |
| MIL S 19500/555 : F | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6788, 2N6790, 2N6792, + 2N6794 JAN, JANTX, JANTXV, JANS, JANHC, JANKC |
| MIL S 19500/392 : C (1) | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N3485A, 2N3486A, JAN, JANTX AND JANTXV |
| MIL-S-19500-381 Base Document:1968 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, TYPES 2N2034, 2N2858, 2N2859, 2N2911 AND TX2N2034, TX2N2858, TX2N2859, TX2N2911 |
| MIL S 19500/495 : A (3) | SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, NPN, SILICON TYPES 2N5793, TX2N5793, TXV2N5793, 2N5794, TX2N5794, TXV2N5794 |
| MIL-S-19500-24 Revision D:1970 | SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, POWER TYPE 2N158 |
| MIL S 19500/395 : C | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPES 2N3735, 2N3735L AND 2N3737, JANTX, JANTXV AND JANS |
| MIL S 19500/505 : A | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER TYPES 2N6286, 2N6287, NON-TX, TX AND TXV |
| MIL S 19500/523 : A | SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER TYPES 2N6383, 2N6384, 2N6385 NON-TX, TX AND TXV |
| MIL S 19500/434 : B | SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555 TO 1N5558 AND 1N5610 TO 1N5613 JAN, JANTX, JANTXV AND JANS |
| MIL S 19500/469 : A | SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, SINGLE PHASE, FULL WAVE BRIDGE RECTIFIER, JANTX AND JANTXV |
| DSCC 91011 : B | SEMICONDUCTOR DEVICE, DIODE, ULTRA FAST |
| MIL S 19500/617 : 0 | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6672 THRU 1N6674 AND 1N6672R THRU 1N6674R, JANTX, JANTXV AND JANS |
| MIL S 19500/483 : A | SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, THREE PHASE, FULL WAVE BRIDGE RECTIFIER PART NUMBERS M19500/483-01 THROUGH M19500/483-04 |
| DSCC 90025 : C | SEMICONDUCTOR DEVICE, POWER SWITCHING REGULATOR ASSEMBLY |
| I.S. EN 16602-60-05:2014 | SPACE PRODUCT ASSURANCE - GENERIC PROCUREMENT REQUIREMENTS FOR HYBRIDS |
| ASTM E 1161 : 2009 | Standard Practice for Radiologic Examination of Semiconductors and Electronic Components |
| SAE AS 6171/5 : 2016 | TECHNIQUES FOR SUSPECT/COUNTERFEIT EEE PARTS DETECTION BY RADIOLOGICAL TEST METHODS |
| ANSI/NCSL Z540 3 : 2006(R2013) | REQUIREMENTS FOR THE CALIBRATION OF MEASURING AND TEST EQUIPMENT |
| MIL-PRF-19500 Revision P:2010 | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
| MIL-STD-750-1 Revision A:2015 | Environmental Test Methods for Semiconductor Devices Part 1: Test Methods 1000 Through 1999 |
| MIL-STD-1686 Revision C:1995 | ELECTROSTATIC DISCHARGE CONTROL PROGRAM FOR PROTECTION OF ELECTRICAL AND ELECTRONIC PARTS, ASSEMBLIES AND EQUIPMENT (EXCLUDING ELECTRICALLY INITIATED EXPLOSIVE DEVICES) |
| MIL-STD-750-4 Base Document:2012 | Diode Electrical Test Methods for Semiconductor Devices Part 4: Test Methods 4000 Through 4999 |
| MIL-HDBK-263 Revision B:1994 | ELECTROSTATIC DISCHARGE CONTROL HANDBOOK FOR PROTECTION OF ELECTRICAL & ELECTRONIC PARTS, ASSEMBLIES & EQUIPMENT |
| MIL STD 750-2 : A | MECHANICAL TEST METHODS FOR SEMICONDUCTOR DEVICES - PART 2: TEST METHODS 2001 THROUGH 2999 |
| MIL-STD-750-3 Base Document:2012 | Transistor Electrical Test Methods for Semiconductor Devices Part 3: Test Methods 3000 Through 3999 |
| MIL-STD-750-5 Base Document:2012 | HIGH RELIABILITY SPACE APPLICATION TEST METHODS FOR SEMICONDUCTOR DEVICES - PART 5: TEST METHODS 5000 THROUGH 5999 |
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